Download ISL9R860PF2 8 A, 600 V, STEALTH Diode —

ISL9R860PF2
8 A, 600 V, STEALTHTM Diode
Features
Description
• Stealth Recovery trr = 28 ns (@IF = 8 A)
The ISL9R860PF2 is a STEALTH™ diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH™ family exhibits low reverse recovery current (Irr) and
exceptionally soft recovery under typical operating conditions. This
device is intended for use as a free wheeling or boost diode in
power supplies and other power switching applications. The low Irr
and short ta phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use of
additional snubber circuitry. Consider using the STEALTH™ diode
with an SMPS IGBT to provide the most efficient and highest power
density design at lower cost.
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
Symbol
TO-220F-2L
K
A
CATHODE
ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
Parameter
Ratings
600
Unit
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
8
A
Peak Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current (TC = 75oC)
IFRM
Repetitive Peak Surge Current (20 kHz Square Wave)
16
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
100
A
PD
EAVL
TJ, TSTG
TL
Power Dissipation
26
W
Avalanche Energy (1 A, 40 mH)
20
mJ
-55 to 150
°C
300
°C
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
1
www.fairchildsemi.com
ISL9R860PF2 — STEALTH™ Diode
November 2013
Part Number
Top Mark
Package
ISL9R860PF2
ISL9R860PF2
TO-220F-2L
Packing Method Reel Size
Tube
Tape Width
Quantity
N/A
50
N/A
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Test Conditions
Parameter
Min
Typ
Max
Unit
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600 V
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
On State Characteristics
VF
Instantaneous Forward Voltage
TC = 25°C
-
2.0
2.4
V
TC = 125°C
-
1.6
2.0
V
VR = 10 V , IF = 0 A
-
30
-
pF
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V
-
18
25
ns
IF = 8 A, diF/dt = 100 A/µs, VR = 30 V
IF = 8 A,
diF/dt = 200 A/µs,
VR = 390 V, TC = 25°C
-
21
30
ns
-
28
-
ns
-
3.2
-
A
-
50
-
nC
ns
IF = 8 A
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Irr
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Maximum Reverse Recovery Current
Qrr
dIM/dt
Reverse Recovery Charge
IF = 8 A,
diF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
-
77
-
-
3.7
-
-
3.4
-
A
-
150
-
nC
IF = 8 A,
diF/dt = 600 A/µs,
VR = 390 V,
TC = 125°C
-
53
-
ns
-
2.5
-
Maximum di/dt during tb
-
6.5
-
A
195
-
nC
-
500
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
4.8
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220F
-
-
70
°C/W
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
2
www.fairchildsemi.com
ISL9R860PF2 — STEALTH™ Diode
Package Marking and Ordering Information
16
100
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
175oC
175oC
14
150oC
12
25oC
10
125oC
8
100oC
6
4
150oC
10
125oC
100oC
1
25oC
2
0
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
0.1
100
2.25 2.5 2.75
200
300
Figure 1. Forward Current vs Forward Voltage
600
90
VR = 390V, TJ = 125°C
VR = 390V, TJ = 125°C
80
70
tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs
tb AT IF = 16A, 8A, 4A
70
60
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
500
Figure 2. Reverse Current vs Reverse Voltage
80
50
40
30
20
10
2
4
6
10
8
12
50
40
30
20
ta AT IF = 16A, 8A, 4A
0
0
60
10
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
14
0
100
16
200
IF, FORWARD CURRENT (A)
300 400
500
600
700 800
900
diF/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 4. ta and tb Curves vs diF/dt
Figure 3. ta and tb Curves vs Forward Current
14
VR = 390V, TJ = 125°C
diF/dt = 800A/µs
Irr, MAX REVERSE RECOVERY CURRENT (A)
11
Irr, MAX REVERSE RECOVERY CURRENT (A)
400
VR , REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
10
9
8
diF/dt = 500A/µs
7
6
5
diF/dt = 200A/µs
4
3
2
0
2
4
6
8
10
12
IF, FORWARD CURRENT (A)
14
16
IF = 16A
10
IF = 8A
8
IF = 4A
6
4
2
0
100
200
300
400
500
600
700
800
900
1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
VR = 390V, TJ = 125°C
12
Figure 6. Maximum Reverse Recovery Current vs
diF/dt
3
www.fairchildsemi.com
ISL9R860PF2 — STEALTH™ Diode
Typical Performance Curves
350
S, REVERSE RECOVERY SOFTNESS FACTOR
6
QRR, REVERSE RECOVERY CHARGE (nC)
VR = 390V, TJ = 125°C
5
4
IF = 16A
IF = 8A
3
IF = 4A
2
1
100
200
300
400
500
600
700
800
900
VR = 390V, TJ = 125°C
300
IF = 16A
250
IF = 8A
200
150
IF = 4A
100
50
100
1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
200
300
400
500
600
700
800
900
1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs diF/dt
Figure 8. Reverse Recovery Charge vs diF/dt
1200
IF(AV), AVERAGE FORWARD CURRENT (A)
CJ , JUNCTION CAPACITANCE (pF)
10
1000
800
600
400
200
0
0.1
1
10
8
6
4
2
0
50
75
100
100
125
150
TC, CASE TEMPERATURE (oC)
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
2.0
ZθJA, NORMALIZED
THERMAL IMPEDANCE
1.0
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
4
www.fairchildsemi.com
ISL9R860PF2 — STEALTH™ Diode
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL diF/dt t1
AND t2 CONTROL IF
L
IF
DUT
RG
VGE
CURRENT
SENSE
trr
dt
ta
tb
0
+
VDD
-
MOSFET
t1
diF
0.25 IRM
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
VAVL
R
+
IL
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
IL
I V
t1
t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
5
www.fairchildsemi.com
ISL9R860PF2 — STEALTH™ Diode
Test Circuits and Waveforms
ISL9R460PF2 — STEALTH™ Diode
Mechanical Dimensions
Figure 16. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002.
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
6
www.fairchildsemi.com
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THEREIN, WHICH COVERS THESE PRODUCTS.
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2.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
7
www.fairchildsemi.com
ISL9R860PF2 — STEALTH™ Diode
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