Magnetic Resonance Imaging of Surgical Implants Made from Weak
... transversal component of the magnetization vector, and thus, rapid loss of image intensity in the area surrounding magnetic implants. Therefore, imaging of tissues adjacent to the magnetic implants is very challenging. Nevertheless, some materials with low magnetic susceptibility can also cause an a ...
... transversal component of the magnetization vector, and thus, rapid loss of image intensity in the area surrounding magnetic implants. Therefore, imaging of tissues adjacent to the magnetic implants is very challenging. Nevertheless, some materials with low magnetic susceptibility can also cause an a ...
Learning about Space Weather - Laboratory for Atmospheric and
... helium plus light energy (in the form of gamma-rays). This light energy interacts with matter and is transformed into heat. • The Sun is so hot that the electrons cannot stay attached to the nucleus of the atom. This means the Sun is mostly a hot, electrically charged gas, which is known as “plasma. ...
... helium plus light energy (in the form of gamma-rays). This light energy interacts with matter and is transformed into heat. • The Sun is so hot that the electrons cannot stay attached to the nucleus of the atom. This means the Sun is mostly a hot, electrically charged gas, which is known as “plasma. ...
Series Circuits - OISE-IS-Chemistry-2011-2012
... Adding extra resistors in parallel decreases the total resistance of the circuit Most electrons will follow the path with the smallest resistance values Therefore the current is greater on the paths with the smaller resistance Each electron has the same amount of energy and electrons must expend all ...
... Adding extra resistors in parallel decreases the total resistance of the circuit Most electrons will follow the path with the smallest resistance values Therefore the current is greater on the paths with the smaller resistance Each electron has the same amount of energy and electrons must expend all ...
Resistance - Electrical Exams
... circuits, showers, etc. This fact means that when all of these circuits are connected together and an insulation resistance test is done, the overall reading may well be unacceptable. Why, because the circuits all possess resistance and resistors in parallel have the effect of reducing the overall v ...
... circuits, showers, etc. This fact means that when all of these circuits are connected together and an insulation resistance test is done, the overall reading may well be unacceptable. Why, because the circuits all possess resistance and resistors in parallel have the effect of reducing the overall v ...
Applied field Mössbauer study of shape anisotropy in Fe nanowire
... data very well [Fig. 3(b)]. Herein, the chain-of-spheres model12 is quoted to interpret the domain structure and the magnetization process. Figure 4 is the sketches of the domain structure of a single nanowire in external field. Each nanowire can be considered as a chain of single-domain spheres. Si ...
... data very well [Fig. 3(b)]. Herein, the chain-of-spheres model12 is quoted to interpret the domain structure and the magnetization process. Figure 4 is the sketches of the domain structure of a single nanowire in external field. Each nanowire can be considered as a chain of single-domain spheres. Si ...
An IC/Microfluidic Hybrid Microsystem for 2D Magnetic Manipulation
... spatially patterned magnetic fields utilizing an integrated microelectromagnet array, which is controlled by integrated electronics. The magnetic fields can manipulate individual cells tagged by magnetic beads that are suspended inside the microfluidic system. The spatial patterns of the magnetic fi ...
... spatially patterned magnetic fields utilizing an integrated microelectromagnet array, which is controlled by integrated electronics. The magnetic fields can manipulate individual cells tagged by magnetic beads that are suspended inside the microfluidic system. The spatial patterns of the magnetic fi ...
Ballistic electron focusing by elliptic reflecting barriers
... The large carrier mean free path in two-dimensional electron systems ~2DESs! at the AlGaAs/GaAs interface affords methods of controlling magnetoresistance characteristics. If the carrier mean free path is substantially larger than the length scale defined by the device geometry, the classical cyclot ...
... The large carrier mean free path in two-dimensional electron systems ~2DESs! at the AlGaAs/GaAs interface affords methods of controlling magnetoresistance characteristics. If the carrier mean free path is substantially larger than the length scale defined by the device geometry, the classical cyclot ...
Record High Single-Ion Magnetic Moments Through 4f 5d1 Electron
... gradual decline of the χMT product (and therefore also μeff = √8·χMT) with decreasing temperature, resulting from the presence of magnetic anisotropy and depopulation of the crystal field levels of the J ground state. For all lanthanides but SmIII and EuIII, the room temperature χMT values are lower ...
... gradual decline of the χMT product (and therefore also μeff = √8·χMT) with decreasing temperature, resulting from the presence of magnetic anisotropy and depopulation of the crystal field levels of the J ground state. For all lanthanides but SmIII and EuIII, the room temperature χMT values are lower ...
Solution to PHYS 1112 In-Class Exam #3A
... (7) Kirchhoff Rule Circuit Analysis: Any circuit can be analyzed, i.e., unknown voltages, currents and/or resistances, etc., can be calculated from known ones, by the following steps: (K1) Find all ”junctions” (≡where more than two wires meet); label them (e.g., a, b, ...). ...
... (7) Kirchhoff Rule Circuit Analysis: Any circuit can be analyzed, i.e., unknown voltages, currents and/or resistances, etc., can be calculated from known ones, by the following steps: (K1) Find all ”junctions” (≡where more than two wires meet); label them (e.g., a, b, ...). ...
Giant magnetoresistance
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.