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1 Current 2 Resistance and Ohm`s Law
1 Current 2 Resistance and Ohm`s Law

... thermistor : a small semiconductor crystal usde to make a sensitive electronic thermometer; its resistance is used as a thermometric property. superconductivity : materials, which as the temperature decreases, the resistivity at first decreases smoothly, like a metal, but at a critical transition te ...
Sources of the Magnetic Field
Sources of the Magnetic Field

Sources of the Magnetic Field
Sources of the Magnetic Field

... is above the larger loop (radius R) by a distance x >> R. Consequently, the magnetic field due to the current i in the larger loop is nearly constant throughout the smaller loop. Suppose that x is increasing at the constant rate of dx/dt = v. (a) Determine the magnetic flux through the area bounded ...
Root Breaks - Wiltshire Cricket
Root Breaks - Wiltshire Cricket

... keyed into the previous layer by raking or scarifying the surface of the lower layer then breaks at 50 mm will be manufactured into the profile. Even when constructed in 50 mm layers the top of the 50 mm layer will be more compacted than the soil below so careful construction is essential. ...
2.1 11 The ac generator - Pearson Schools and FE Colleges
2.1 11 The ac generator - Pearson Schools and FE Colleges

... On Figure 1 a line is also drawn showing a direct current. This has a value of 7.07 A. If these two currents were passing, separately, through the same resistor, they would both produce the same heating effect. For this reason an alternating current that varies between –10 A and +10 A is said to be ...
Lecture 8a - Magnetism
Lecture 8a - Magnetism

... moving at nearly the same velocity. This can be achieved using both a uniform electric field and a uniform magnetic field, arranged so they are at right angles to each other. Particles of charge q pass through slit S1 and enter the region where B points into the page and E points down from the posit ...
Semiconductors (opens in a new window)
Semiconductors (opens in a new window)

Physics 2102 Spring 2002 Lecture 8
Physics 2102 Spring 2002 Lecture 8

... Two conductors are made of the same material and have the same length. Conductor A is a solid wire of diameter r=1.0mm. Conductor B is a hollow tube of outside diameter 2r=2.0mm and inside diameter r=1.0mm. What is the resistance ratio RA/RB, measured between their ends? ...
The Magnetic Field
The Magnetic Field



... 13. Two metallic wires A and B are connected in parallel. Wire A has length l and radius r, wire B has a length 2l and radius 2r. Compute the ratio of the total resistance of parallel combination and the resistance of wire A. 14. What is the meaning of the term ‘frequency’ of an alternating current? ...
Lab 6: The Earth`s Magnetic Field
Lab 6: The Earth`s Magnetic Field

... N-S direction) using the compass needle. Then place the axis of the bar magnet perpendicular to the N/S direction, with the magnet’s center at a distance R from the center of the compass needle. It is assumed that the distance R is very much larger than L, the Exercise 2: Solve equation 2 to obtain ...
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solutions

... 7. A series LR circuit includes a 9.0 V battery, a resistance of 0.50 Ω, and an inductance of 0.80 H. The elements are in series with an open switch. What is the voltage across the inductor 2.0 s after the switch is closed? Answer: 2.6 V Solution: The emf across the inductor in an LR circuit is give ...
Electromagnetic Induction
Electromagnetic Induction

... • The induced voltage in a coil is proportional to the product of the number of loops and the rate at which the magnetic field changes within those loops. • The amount of resulting current depends on the induced voltage but also on the resistance of the coil and the nature of the circuit (a property ...
Document
Document

Ch 26 Current and Resistance
Ch 26 Current and Resistance

The History of Magnets and Electromagents
The History of Magnets and Electromagents



Magnetism Sampler random from text - Rye High School
Magnetism Sampler random from text - Rye High School

... D) either no magnetic field exists or the particle is moving parallel to the field. E) either no magnetic field exists or the particle is moving perpendicular to the field. ____ ...
D-3 Notes
D-3 Notes

current density J
current density J

... •Also called an Ohm () R ...
Chapter 27.
Chapter 27.

Discovery of Electron Spin, and the Stern
Discovery of Electron Spin, and the Stern

... also to have spin ½. He had to use clever tricks, as proton is also charged and would have Lorentz force. He chose neutral H2 molecules which have two protons each.(In hydrogen atom, the 2000 times larger electron moment overwhelms that of the proton!) The trick was to choose parahydrogen, in which ...
Electric Circuits
Electric Circuits

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KV No. 1 (Paper-I)
KV No. 1 (Paper-I)

Laboratory 3
Laboratory 3

... with the compass 4 centimeters (1.5 inches) distant from the electromagnet. Do not bring the compass close to the electromagnet. Record your observations. Keeping the electromagnet in the same position and orientation, reverse the connections of the wires to the power supply. Explore the magnetic fi ...
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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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