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Electron Configuration Notes
Electron Configuration Notes

... Max Born: Interpreted an equation discovered by Schrodinger to mean that although we cannot predict the exact location and path of an electron, we can describe its path in terms of probability. This is the fundamental concept ...
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Electron Configuration
Electron Configuration

... A drawback to the previous method of showing the electron configuration  is that it does not tell how the three 2p electrons are distributed among the  three 2p orbitals.    An orbital diagram, in which boxes are used to indicate orbitals within a  subshell and arrows to represent electrons in these ...
Electrical Properties
Electrical Properties

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... Consider a beam of spin 12 particles in a Stern-Gerlach experiment, having spin aligned in the positive x direction, i.e. |Sx , +i. When this beam goes through a Stern-Gerlach apparatus with an inhomogeneous magnetic field in the z-direction (SGz), it splits into two beams of equal intensity, i.e. | ...
Electrons in Atoms
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... A bombarding electron collides with an electron in the target metal that is in an inner shell If there is sufficient energy, the electron is removed from the target atom The vacancy created by the lost electron is filled by an electron electron falling to the vacancy from a higher energy level The t ...
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Physics 107 Exam #3 October 13, 1994 Your name: Multiple Choice
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ELECTRONS IN ATOMS
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Electron-beam lithography



Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (""exposing""). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (""developing""). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution and low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research & development.
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