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AVC Logic Family Technology and Applications
AVC Logic Family Technology and Applications

Data Sheets
Data Sheets

Effects  of Smoke on Functional  Circuits NUREG/CR-6543 SAND97-2544
Effects of Smoke on Functional Circuits NUREG/CR-6543 SAND97-2544

... environments such as fire and smoke on such systems are not known. There are no standard tests for smoke, but previous smoke exposure tests at Sandia National Laboratories have shown that digital communications can be temporarily interrupted during a smoke exposure. Another concern is the long-term ...
Dynamic Gate - Washington State University
Dynamic Gate - Washington State University

module 9 – control systems
module 9 – control systems

MAX4670 Integrated T1/E1/J1 Short-Haul and Long-Haul Protection Switch General Description
MAX4670 Integrated T1/E1/J1 Short-Haul and Long-Haul Protection Switch General Description

... with 60pF and 40pF on- and off-capacitances, respectively, for interfacing to the LIU transmitter inputs. The MAX4670 also includes four 5Ω on-resistance switches with low 24pF and 12pF on- and off-capacitances, respectively, for interfacing to the LIU receiver inputs. The MAX4670 replaces two diode ...
AD5280,82 - Analog Devices
AD5280,82 - Analog Devices

W225-10022
W225-10022

... Second, the variation of reactance during the switching cycle should not be so large as to introduce undesirable fluctuations in the line voltage. The reactor has an iron core with gaps in the magnetic circuit to set this magnetizing circulating current value based on the applied tapped voltage. Th ...
LTC6905 - 17MHz to 170MHz Resistor Set SOT-23 Oscillator.
LTC6905 - 17MHz to 170MHz Resistor Set SOT-23 Oscillator.

... eliminating the need for tables to calculate frequency. The oscillator can be easily programmed using the simple formula outlined below: ...
PCA9517 1. General description Level translating I
PCA9517 1. General description Level translating I

... The size of these pull-up resistors depends on the system, but each side of the repeater must have a pull-up resistor. This part designed to work with Standard mode and Fast mode I2C-bus devices in addition to SMBus devices. Standard mode I2C-bus devices only specify 3 mA output drive; this limits t ...
BD9611MUV
BD9611MUV

... The BD9611MUV is a high-resistance, wide voltage input (10V to 56V), synchronous step-down switching regulator. BD9611MUV offers design flexibility through user-programmable functions such as soft-start, operating frequency, high-side current limit, and loop compensation. BD9611MUV uses voltage puls ...
Template of Manuscripts for IREE - Iranian Journal of Electrical and
Template of Manuscripts for IREE - Iranian Journal of Electrical and

... was done in [9]; in this paper an efficient method for detection of Ferroresonance in distribution transformer based on wavelet transform is presented. Using this method ferroresonance can be discriminate from other transients such as capacitor switching, load switching, transformer switching. Impa ...
Document
Document

... Dr. Wanda Wosik ...
ANSWERS - AP Physics Multiple Choice Practice * Torque
ANSWERS - AP Physics Multiple Choice Practice * Torque

... Let the current through the 1  be x. The potential difference across the 1  resistor is then x volts. The current will divide between the upper branch (5 ) and the lower branch (9 ) with (using the current divider ratio method) 9/(9 + 5) = 9/14 x in the upper branch and 5/14 x in the lower branc ...
AAT3692 数据资料DataSheet下载
AAT3692 数据资料DataSheet下载

... ADP voltage is higher than 4.5V. The charging current is determined by the selected charging path and its external set resistor (RSET). USB charging uses an automatic charge reduction loop control to allow battery charging with limited available current from a USB port while maintaining the regulate ...
STA-6033(Z) 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Features Product Description
STA-6033(Z) 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Features Product Description

... RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. ...
NAND Gate Latch
NAND Gate Latch

... simple two-state systems such as oscillators, timers and flip-flops. It is characterized by two amplifying devices (transistors, electron tubes or other devices) cross-coupled by resistors and capacitors. There are three types of multivibrator circuit: astable, in which the circuit is not stable in ...
MAX9922/MAX9923 Ultra-Precision, High-Side Current-Sense Amplifiers General Description
MAX9922/MAX9923 Ultra-Precision, High-Side Current-Sense Amplifiers General Description

... better than 0.5%. The combination of low VOS and highgain accuracy allows precise current measurements even at very small sense voltages. The MAX9922/MAX9923 are capable of both unidirectional and bidirectional operation. For unidirectional operation, connect REF to GND. For bidirectional operation, ...
Thevenin`s Theorem
Thevenin`s Theorem

NEC-403 - ABES Engineering College
NEC-403 - ABES Engineering College

Is = ______ Amps
Is = ______ Amps

CHIP TALK - Talking Electronics
CHIP TALK - Talking Electronics

... titled “Chip-talk.” All semiconductor devices from a small IC through Application-Specific Integrated Circuit (ASIC) to systems-on-a-chip (SOC) are nicknamed ‘Chip.’ Part I of the book is specially devoted to those readers who have little or no previous exposure to electronics fundamentals, wiring o ...
Features •
Features •

... CLK_ON, and DIV_CNTRL bits in the configuration register. When CLK_ONLY is “clear”, normal operation is selected and the fractional-N PLL is operating. When CLK_ON is “set”, the CLK output is enabled. The crystal clock divider ratio can be set to divide by four when DIV_CNTRL is “set” and divide by ...
Sample Collaborative Unit: DC Circuits Gregory
Sample Collaborative Unit: DC Circuits Gregory

AD7863 Data Sheet
AD7863 Data Sheet

... The AD7863 is a high speed, low power, dual 14-bit A/D converter that operates from a single +5 V supply. The part contains two 5.2 µs successive approximation ADCs, two track/hold amplifiers, an internal +2.5 V reference and a high speed parallel interface. Four analog inputs are grouped into two c ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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