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lecture05_06_30_2010..
lecture05_06_30_2010..

MasteringPhysics
MasteringPhysics

Note to EE 312 Students
Note to EE 312 Students

... The equations for the pn-junction diode given in the EE 310 textbook “Microelectronic Circuits” by Sedra/Smith are based upon the standard Shockley diffusion theory. After processing the data for the 1N4004 silicon rectifier diode, it was discovered that the standard Shockley diffusion theory did n ...
Print this article
Print this article

A High Reliability PUF Using Hot Carrier Injection Based Response
A High Reliability PUF Using Hot Carrier Injection Based Response

... Hot carrier injection (HCI) is a phenomenon by which the threshold voltage (VT H ) of a transistor may be permanently altered post-manufacturing when high energy carriers become trapped in the gate oxide. The increase in VT H due to HCI stress is usually an undesired phenomenon as it makes the trans ...
General Description Features
General Description Features

... for low-power, small size, and high dynamic performance. Excellent dynamic performance is maintained from baseband to input frequencies of 175MHz and beyond, making the MAX12553 ideal for intermediatefrequency (IF) sampling applications. Powered from a single 3.15V to 3.60V supply, the MAX12553 cons ...
TPS22975 5.7-V 6-A 16-mΩ On-Resistance
TPS22975 5.7-V 6-A 16-mΩ On-Resistance

... TPS22975 5.7-V, 6-A, 16-mΩ On-Resistance Load Switch 1 Features ...
MAX12555 14-Bit, 95Msps, 3.3V ADC General Description Features
MAX12555 14-Bit, 95Msps, 3.3V ADC General Description Features

... for high dynamic performance, low power, and small size. Excellent dynamic performance is maintained from baseband to input frequencies of 175MHz and beyond, making the MAX12555 ideal for intermediatefrequency (IF) sampling applications. Powered from a single 3.3V supply, the MAX12555 consumes only ...
MAX12554 14-Bit, 80Msps, 3.3V ADC General Description Features
MAX12554 14-Bit, 80Msps, 3.3V ADC General Description Features

... small size. Excellent dynamic performance is maintained from baseband to input frequencies of 175MHz and beyond, making the MAX12554 ideal for intermediatefrequency (IF) sampling applications. Powered from a single 3.3V supply, the MAX12554 consumes only 429mW while delivering a typical 70.9dB signa ...
here - electriccircuits
here - electriccircuits

UCC28950 数据资料 dataSheet 下载
UCC28950 数据资料 dataSheet 下载

... • VDD voltage exceeds rising UVLO threshold 7.3 V typical. • The 5-V reference voltage is available. • Junction temperature is below the thermal shutdown threshold of 140°C. • The voltage on the soft-start capacitor is not below 0.55 V typical. If all those conditions are met, an internal enable sig ...
UNIT-3 (1) - WordPress.com
UNIT-3 (1) - WordPress.com

... gate A so if S = 1, both inputs of gate A are at the logic 1 state. This means that the output of gate A must be 0 (as was originally specified). In other words, the 0 state at Q is continuously disabling gate B so that any change in R has no effect. Also the 1 state at is continuously enabling gate ...
LTC6405
LTC6405

... operating temperature range –40°C to 85°C. Note 5: The LTC6405C is guaranteed to meet specified performance from 0°C to 70°C. The LTC6405C is designed, characterized, and expected to meet specified performance from –40°C to 85°C but is not tested or QA sampled at these temperatures. The LTC6405I is gu ...
Atmel MSL3080 8 String 60mA LED Drivers with Integrated Boost Controller FULL DATASHEET
Atmel MSL3080 8 String 60mA LED Drivers with Integrated Boost Controller FULL DATASHEET

... Enable Input: Drive EN high to turn on the device, drive it low to turn it off. For automatic startup connect EN to VIN. Toggle EN low then high to reset FLTB, or reset it through the I2C serial interface. ...
ADA4860-1
ADA4860-1

... may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may a ...
Fast Boolean Algebra - Department of Electronics
Fast Boolean Algebra - Department of Electronics

unit-ii dc generators and armature reaction, commutation
unit-ii dc generators and armature reaction, commutation

... 1. A short-shunt compound generator delivers a load current of 30A at 220V, and has a armature, series-field resistance of 0.05Ω, 0.3Ω and 200Ω respectively. Calculate the induced emf and the armature current. Allow 1V per brush for contact drop. 2. A 24 KW, 250V, 1600 rpm separately excited d.c. ge ...
2.7.1 armature voltage control
2.7.1 armature voltage control

Lab 11  - Mechanical Measurements - PSU MNE
Lab 11 - Mechanical Measurements - PSU MNE

TPA0172 数据资料 dataSheet 下载
TPA0172 数据资料 dataSheet 下载

... delivering 2 W of continuous RMS power per channel into 4-Ω loads. This device utilizes the I2C bus to control its functionality, which minimizes the number of external components needed, simplifies the design, and frees up board space for other features. When driving 1 W into 8-Ω speakers, the TPA0 ...
FEATURES FUNCTIONAL BLOCK DIAGRAM
FEATURES FUNCTIONAL BLOCK DIAGRAM

... jitter frequency synthesizers to maximize network performance. Other applications with demanding phase noise and jitter requirements also benefit from this part. ...
Annotated version for ch 7
Annotated version for ch 7

PDF: 1.27MB
PDF: 1.27MB

... (Fig.1-1) It uses the BSC as a control supply for driving P-side device such as IGBT and MOSFET. The BSC supplies gate charge when P-side device turning ON and circuit current of logic circuit on P-side driving IC. (Fig.1-2) Since a capacitor is used as substitute for isolated supply, its supply cap ...
Effects  of Smoke on Functional  Circuits NUREG/CR-6543 SAND97-2544
Effects of Smoke on Functional Circuits NUREG/CR-6543 SAND97-2544

... environments such as fire and smoke on such systems are not known. There are no standard tests for smoke, but previous smoke exposure tests at Sandia National Laboratories have shown that digital communications can be temporarily interrupted during a smoke exposure. Another concern is the long-term ...
Data Sheets
Data Sheets

< 1 ... 81 82 83 84 85 86 87 88 89 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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