
TV-PUF - Cryptology ePrint Archive
... Broadly classifying, there are two types of PUFs: i. Delay based PUFs (e.g., Arbiter PUF, Ring oscillator PUF, Glitch PUF and Schmitt trigger PUF) ii. Memory based PUFs (e.g.,SRAM based PUF, butterfly PUF, Latch PUF). A technique for IC identification based on the unique resistance values in its pow ...
... Broadly classifying, there are two types of PUFs: i. Delay based PUFs (e.g., Arbiter PUF, Ring oscillator PUF, Glitch PUF and Schmitt trigger PUF) ii. Memory based PUFs (e.g.,SRAM based PUF, butterfly PUF, Latch PUF). A technique for IC identification based on the unique resistance values in its pow ...
AAT4621 数据资料DataSheet下载
... level to both of the EN pins. When both EN IL and EN IU are selected ISETU will be selected. The EN function has logic level thresholds that allow the AAT4621 to be TTL compatible and may also be controlled by 2.5V to 5.0V CMOS circuits. The voltage level applied to the EN pins should not exceed the ...
... level to both of the EN pins. When both EN IL and EN IU are selected ISETU will be selected. The EN function has logic level thresholds that allow the AAT4621 to be TTL compatible and may also be controlled by 2.5V to 5.0V CMOS circuits. The voltage level applied to the EN pins should not exceed the ...
AN1953
... With this method, the boost inductor works on the boundary between continuous and discontinuous mode. In this operation mode there is a high peak current which means that this kind of approach could be used for power below 600W. Here, the system works with fixed ON-time and variable frequency and fu ...
... With this method, the boost inductor works on the boundary between continuous and discontinuous mode. In this operation mode there is a high peak current which means that this kind of approach could be used for power below 600W. Here, the system works with fixed ON-time and variable frequency and fu ...
Low-Cost Multichemistry Battery Chargers General Description Features
... simplify the construction of accurate and efficient chargers. These devices use analog inputs to control charge current and voltage, and can be programmed by the host or hardwired. The MAX1908/MAX8724/MAX8765/ MAX8765A achieve high efficiency using a buck topology with synchronous rectification. The ...
... simplify the construction of accurate and efficient chargers. These devices use analog inputs to control charge current and voltage, and can be programmed by the host or hardwired. The MAX1908/MAX8724/MAX8765/ MAX8765A achieve high efficiency using a buck topology with synchronous rectification. The ...
RAJ240500
... Internal pins between AFE and MCU are listed in Table 1-1. These signals are connected within the package and not accessible with any external pins. Table 1-2 : Internal Pin Description I/O as seen from AFE MCU pin ...
... Internal pins between AFE and MCU are listed in Table 1-1. These signals are connected within the package and not accessible with any external pins. Table 1-2 : Internal Pin Description I/O as seen from AFE MCU pin ...
MAX1182 Dual 10-Bit, 65Msps, 3V, Low-Power ADC General Description
... three-state outputs. The digital output format is set to two’s complement or straight offset binary through a single control pin. The device provides for a separate output power supply of 1.7V to 3.6V for flexible interfacing. The MAX1182 is available in a 7mm x 7mm, 48-pin TQFP package, and is spec ...
... three-state outputs. The digital output format is set to two’s complement or straight offset binary through a single control pin. The device provides for a separate output power supply of 1.7V to 3.6V for flexible interfacing. The MAX1182 is available in a 7mm x 7mm, 48-pin TQFP package, and is spec ...
bq24616 JEITA Compatible Stand-Alone Synchronous Switch
... Battery-to-system MOSFET driver output. Gate drive for the battery-to-system load BAT PMOS power FET to isolate the system from the battery to prevent current flow from the system to the battery, while allowing a lowimpedance path from battery to system. Connect this pin through a 1-kΩ resistor to t ...
... Battery-to-system MOSFET driver output. Gate drive for the battery-to-system load BAT PMOS power FET to isolate the system from the battery to prevent current flow from the system to the battery, while allowing a lowimpedance path from battery to system. Connect this pin through a 1-kΩ resistor to t ...
electrotechnich lab. part 1 - İstanbul Ticaret Üniversitesi
... charges (electron) in the core of an atom. Atom is electrically not charged (neutral). Because positive and negative charges are equal for every atom. The core and the shell are positioned like spheres with the same center but with different diameters. There may be more than one shell in an atom. El ...
... charges (electron) in the core of an atom. Atom is electrically not charged (neutral). Because positive and negative charges are equal for every atom. The core and the shell are positioned like spheres with the same center but with different diameters. There may be more than one shell in an atom. El ...
unit_1_Number_Systems__digital_logic_family_7c344 - e
... variety and complexity of the available operations is severely limited. 5. Digital circuits are less affected by noise. As long as the noise is not large enough to prevent us from distinguishing a HIGH from a LOW. 6. More digital circuitry can be fabricated on IC chips. Limitations There is really o ...
... variety and complexity of the available operations is severely limited. 5. Digital circuits are less affected by noise. As long as the noise is not large enough to prevent us from distinguishing a HIGH from a LOW. 6. More digital circuitry can be fabricated on IC chips. Limitations There is really o ...
building series and parallel circuits
... In this activity you'll have a chance to wire the fancy switch used to turn on a hallway light from either end of the corridor. The two switches are actually wired to each other as well as to the light and power source. These switches are called three-way or single-pole, double-throw (SPDT) switches ...
... In this activity you'll have a chance to wire the fancy switch used to turn on a hallway light from either end of the corridor. The two switches are actually wired to each other as well as to the light and power source. These switches are called three-way or single-pole, double-throw (SPDT) switches ...
FDDS10H04A_F085A Smart High Side Switch F DDS10H04A_F085A Sm
... 5) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! 6) Device on76.2mm * 114mm * 1.57mm glass epoxyPCB. still air condition. 7) Not subject to production test, Parameters are calculated from Ron and Rthjc or Rthja. 8) not subject to production test, ...
... 5) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! 6) Device on76.2mm * 114mm * 1.57mm glass epoxyPCB. still air condition. 7) Not subject to production test, Parameters are calculated from Ron and Rthjc or Rthja. 8) not subject to production test, ...
TLV571 数据资料 dataSheet 下载
... reference voltage input The TLV571 has two reference input pins: REFP and REFM. The voltage levels applied to these pins establish the upper and lower limits of the analog inputs to produce a full-scale and zero-scale reading respectively. The values of REFP, REFM, and the analog input should not ex ...
... reference voltage input The TLV571 has two reference input pins: REFP and REFM. The voltage levels applied to these pins establish the upper and lower limits of the analog inputs to produce a full-scale and zero-scale reading respectively. The values of REFP, REFM, and the analog input should not ex ...
Minimum Devices Active-only Current-mode Universal Filter
... The high performance active filters have been received much attention. In filter circuit design, current-mode filters are becoming popular, since they have many advantages compared with their voltage-mode counterparts. Design of current-mode filters employing active devices such as current followers ...
... The high performance active filters have been received much attention. In filter circuit design, current-mode filters are becoming popular, since they have many advantages compared with their voltage-mode counterparts. Design of current-mode filters employing active devices such as current followers ...
Timing Analysis in Presence of Power Supply and Ground Voltage
... Nevertheless, timing verification must take into account power supply variations. We are studying the effect of variations of the grid voltages on the circuit timing, and are developing a static timing analysis (STA) approach that takes these variations into account. We assume that the exact voltage d ...
... Nevertheless, timing verification must take into account power supply variations. We are studying the effect of variations of the grid voltages on the circuit timing, and are developing a static timing analysis (STA) approach that takes these variations into account. We assume that the exact voltage d ...
J.M. Rivas, Y. Han, O. Leitermann, A.D. Sagneri, and D.J. Perreault, “A High-Frequency Resonant Inverter Topology with Low Voltage Stress,” 2007 IEEE Power Electronics Specialists Conference, pp. 2705 – 2717
... designs over wider frequency and power ranges. III. A N EW C LASS -Φ BASED I NVERTER T OPOLOGY Fig. 3 shows the proposed switched-mode resonant inverter, which we term the Φ2 inverter. It is closely related to the class Φ inverter of [5], [25], but has the high order transmission-line network replac ...
... designs over wider frequency and power ranges. III. A N EW C LASS -Φ BASED I NVERTER T OPOLOGY Fig. 3 shows the proposed switched-mode resonant inverter, which we term the Φ2 inverter. It is closely related to the class Φ inverter of [5], [25], but has the high order transmission-line network replac ...
3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563
... If for any reason the R b resistor is not located immediately adjacent to the MGA-85563 (such as in the case of remote current adjustment or to implement dynamic control of the device’s linearity), then a small series resistor (e.g., 10 Ω) should be located near the Rbias pin to de-Q the connection ...
... If for any reason the R b resistor is not located immediately adjacent to the MGA-85563 (such as in the case of remote current adjustment or to implement dynamic control of the device’s linearity), then a small series resistor (e.g., 10 Ω) should be located near the Rbias pin to de-Q the connection ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.