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SN65HVD23x 3.3-V CAN Bus Transceivers
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ADP1874 英文数据手册DataSheet 下载
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... bypass capacitor of 1 μF directly from this pin to PGND and a 0.1 μF across VREG and GND are recommended. Input to the Internal LDO. Tie this pin directly to Pin 7 (VREG). Tracking Input. If the tracking function is not used, it is recommended to connect TRACK to VREG through a resistor higher than ...
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... components. A resistor to set the switching frequency, a resistor divider to set the output voltage, and input and output capacitors are all that are needed to complete the design. Other features such as input and output average current regulation may be implemented with just a few components. The L ...
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... cell phones, and other portable equipment. They feature up to 24V input common-mode voltage range, low 100µA supply current (which drops to only 10µA in shutdown), and a total output error of less than 1.5%. The wide 1.35V to 24V input common-mode range is independent of the supply voltage, ensuring ...
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... level to both of the EN pins. When both EN IL and EN IU are selected ISETU will be selected. The EN function has logic level thresholds that allow the AAT4621 to be TTL compatible and may also be controlled by 2.5V to 5.0V CMOS circuits. The voltage level applied to the EN pins should not exceed the ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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