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AP Questions - Resistance and Capacitance
AP Questions - Resistance and Capacitance

... 47. The power dissipated in a wire carrying a constant electric current I may be written as a function of the length l of the wire, the diameter d of the wire, and the resistivity  of the material in the wire. In this expression, the power dissipated is directly proportional to which of the followi ...
p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation
p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation

... proposed experimental approach might be useful towards the investigation of such statements. Experimental and Discussion In this work, the response of current-voltage characteristic of p-n junction photo-diodes has been experimentally studied under the combined action of illumination and externally ...
Episode 118 - Teaching Advanced Physics
Episode 118 - Teaching Advanced Physics

The development of high-voltage measuring techniques
The development of high-voltage measuring techniques

TLV1571 数据资料 dataSheet 下载
TLV1571 数据资料 dataSheet 下载

... reference voltage input The TLV1571/TLV1578 has two reference input pins: REFP and REFM. The voltage levels applied to these pins establish the upper and lower limits of the analog inputs to produce a full-scale and zero-scale reading respectively. The values of REFP, REFM, and the analog input shou ...
MAX4271/MAX4272/MAX4273 3V to 12V Current-Limiting Hot-Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection
MAX4271/MAX4272/MAX4273 3V to 12V Current-Limiting Hot-Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection

... circuit cards into live backplanes. The discharged filter capacitors of the circuit card provide a low impedance to the live backplane. High inrush currents from the backplane to the circuit card can burn up connectors and components, or momentarily collapse the backplane power supply leading to a s ...
a control strategy for a three-level unified power quality conditioner
a control strategy for a three-level unified power quality conditioner

... NE of the serious problems in electrical systems is the increasing number of electronic components that are used by industry as well as residences. These devices, which need high-quality energy to work properly, at the same time, are the most responsible ones for injections of harmonics in the distr ...
MAX9508 CVBS/S-Video Filter Amplifier with SmartSleep and Bidirectional Video Support General Description
MAX9508 CVBS/S-Video Filter Amplifier with SmartSleep and Bidirectional Video Support General Description

... to the digital-to-analog converter (DAC) outputs. The reconstruction filter removes high-frequency signals above 6.75MHz. The amplifiers have 6dB of gain, and the outputs can be DC-coupled to a load of 75Ω, which is equivalent to two video loads, or it can be AC-coupled to a load of 150Ω. The SmartS ...
MAX14871 4.5V to 36V Full
MAX14871 4.5V to 36V Full

... voltage sense inputs close to the RSENSE resistor. Optionally use differential voltage sensing for higher accuracy sensing. Connect the voltage sense close to the RSENSE resistor and/or use differential voltage-sensing. See Figure 4. ...
amplifiers - kavediasir
amplifiers - kavediasir

... flow through RE and will cause more voltage drop across it thereby reducing the output because of negative feedback. i.e. it reduces AC degeneration NPN transistor:- It is to amplify weak signals. Working of single stage RC coupled amplifier The weak signal to be amplified is fed (applied) between t ...
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Data Sheet MGA-83563 +22 dBm P 3V Power Amplifier
Data Sheet MGA-83563 +22 dBm P 3V Power Amplifier

... input signal level of only +4 dBm to drive it well into saturation. The high output power and high efficiency of the MGA-83563, combined with +3-volt operation and subminiature packaging, make this device especially useful for battery-powered, personal communication applications such as wireless dat ...
S270-20-3 (Discontinued)
S270-20-3 (Discontinued)

... device used in conjunction with source-side protective devices such as reclosers or circuit breakers, to automatically isolate faulted sections of electrical distribution systems. The sectionalizer senses current flow above a preset level, and, when the source-side protective device opens to de-ener ...
Synchronous Switch-Mode, Li-Ion, and Li
Synchronous Switch-Mode, Li-Ion, and Li

2300 MHz to 2900 MHz Balanced Mixer, ADL5363
2300 MHz to 2900 MHz Balanced Mixer, ADL5363

... in TDD applications where it is desirable to rapidly switch between two local oscillators. LO current can be externally set using a resistor to minimize dc current commensurate with the desired level of performance. For low voltage applications, the ADL5363 is capable of operation at voltages down t ...
MAX1645B Advanced Chemistry-Independent, Level 2 Battery Charger with Input Current Limiting General Description
MAX1645B Advanced Chemistry-Independent, Level 2 Battery Charger with Input Current Limiting General Description

... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
EE2003 Circuit Theory
EE2003 Circuit Theory

BQ24707 数据资料 dataSheet 下载
BQ24707 数据资料 dataSheet 下载

... Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. ...
ISL55100B Datasheet
ISL55100B Datasheet

Electrical System Elements
Electrical System Elements

Pulse generator for sweep calibration - K-REx
Pulse generator for sweep calibration - K-REx

... by subduing the high-frequency components of the square wave. The output from the clipper at 2 megacycles per second was even ...
Servay 7th Edition_Chapter33
Servay 7th Edition_Chapter33

... At point c, the current has reached its maximum value in the negative direction. The current and voltage are in step with each other because they vary identically with time. Because iR and DvR both vary as sin vt and reach their maximum values at the same time as shown in Active Figure 33.3a, they a ...
GE 40A Digital MegaDLynx : Non-Isolated DC-DC Power Modules Data Sheet
GE 40A Digital MegaDLynx : Non-Isolated DC-DC Power Modules Data Sheet

... First, there may be a need to further reduce the output ripple and noise of the module. Second, the dynamic response characteristics may need to be customized to a particular load step change. ...
Per-Unit - Iowa State University
Per-Unit - Iowa State University

low-voltage logic (lvc) designer`s guide
low-voltage logic (lvc) designer`s guide

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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