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73S8014R Smart Card Interface  DATA SHEET
73S8014R Smart Card Interface DATA SHEET

... 5 volt / 3 volt card selection: Logic one selects 5 volts for VCC and card interface, logic low selects 3 volt operation. When the part is to be used with a single card voltage, this pin should be tied to either GND or VDD. However, it includes a high impedance pull-up resistor to default this pin h ...
OpenStax Physics Text for 2B - Chapter 4
OpenStax Physics Text for 2B - Chapter 4

multichannel modal liquid crystal wavefront corrector
multichannel modal liquid crystal wavefront corrector

... have been produced based on silicon-based membrane mirrors1,2,3. These mirrors are never-the-less limited by their small size (which is a problem in astronomy because of the large demagnification factor required) and the fact that they are relatively fragile. An ideal wavefront corrector would be ea ...
3622
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... surfaces are free from dents and scratches, and that the display is not scratched or cracked as well. Electrical Check Please see Chapter 2 for an initial operation procedure. When successfully completed, it can be convinced that the power supply is operating in accordance with its specifications. T ...
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... The TPA2010D1 is a fully differential amplifier with differential inputs and outputs. The fully differential amplifier consists of a differential amplifier and a common-mode amplifier. The differential amplifier ensures that the amplifier outputs a differential voltage on the output that is equal to ...
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... Single carrier WCDMA ACLR = 80 dBc @ 61.44 MHz IF Innovative switching output stage permits useable outputs beyond Nyquist frequency LVCMOS inputs with dual-port or optional interleaved single-port operation Differential analog current outputs are programmable from 8.6 mA to 31.7 mA full scale Auxil ...
Channel-length and gate-bias dependence of contact resistance
Channel-length and gate-bias dependence of contact resistance

5 Derating
5 Derating

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... 6 FLASH MEMORY 6.1 MCU EMBEDDED FLASH MEMORY The STM32F205RG devices embed a 128-bit wide Flash memory of 1 Mbytes available for storing programs and data. It also features 512 bytes of OTP memory that can be used to store critical user data such as Ethernet MAC addresses or cryptographic keys. For ...
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... Quiescent current is defined here as the difference in current between the input voltage source and the load at VOUT. Ground current is defined here as the total current flowing to ground as a result of all input voltages applied to the device. Dropout voltage is the voltage difference between the i ...
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... in TDD applications where it is desirable to rapidly switch between two local oscillators. LO current can be externally set using a resistor to minimize dc current commensurate with the desired level of performance. For low voltage applications, the ADL5353 is capable of operation at voltages down t ...
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BQ24120 数据资料 dataSheet 下载

... Temperature sense input. This input monitors its voltage against an internal threshold to determine if charging is allowed. Use an NTC thermistor and a voltage divider powered from VTSB to develop this voltage. (See Figure 13) ...
MAX44265 Rail-to-Rail, 200kHz Op Amp with Shutdown in a Tiny, 6-Bump WLP
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... low operating supply voltage, low input bias current, and rail-to-rail inputs and outputs, the MAX44265 is an excellent choice for precision or general-purpose, lowcurrent, low-voltage, battery-powered applications. This CMOS device consumes an ultra-low 4µA (typ) supply current and has a 200µV (typ ...
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... voltage levels (the voltages of the three input phases) and similarly, any input can be switched to one of four current levels (including zero). In this example, both the input and the output nodes are AC periodic varying quantities and so these levels can only be considered stationary for an interv ...
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... In this paper, we present a methodology for synthesizing single-switch resonant inverters for operation at fixed frequency with variable load resistance (i.e., with load modulation). The proposed approach can be applied to both class E inverters and to higher-order tuned converters such as the class ...
Reactive Power Compensation
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...  De-tuned filters: Suitable when harmonics originate from many sources, and many harmonic frequencies are present Band-pass, High-pass or C-type filters Voltage Range: 1 - 800 kV Power Range: Defined by needs Temperature range: -50 to + 55 ̊C ...
Design of Single-Switch Inverters for Variable Resistance
Design of Single-Switch Inverters for Variable Resistance

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... The STMLS05 device is powered from the VDD pin. Thus, for full device functionality a valid VDD must be present. The VDD UVLO circuit enhances application robustness. If the VDD is below the UVLO threshold, all main switches and discharge circuits are off and all registers are reset to their power-u ...
V out
V out

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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