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Chapter 1 - Transformer
Chapter 1 - Transformer

... The voltage in the primary series impedance (r1 + jx1) is small, even at full load. Also, the no load current (I0) is so small that its effect on the voltage drop in the primary series impedance is negligible. ...
ICS850S1601I Advance Data Sheet.fm
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...  The internal gain of an op-amp is very high. The exact gain is often unpredictable.  We call this gain the open-loop gain or intrinsic ...
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... rejection. A bridge-tied load (BTL) architecture minimizes external component count, while providing highquality, power audio amplification. The MAX9718 is a single-channel amplifier while the MAX9719 is a dualchannel amplifier for stereo systems. Both devices deliver 1.4W continuous average power p ...
21 circuits, bioelectricity, and dc instruments
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FEATURES APPLICATIONS DESCRIPTION
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... It is recommended that all of the DIP switches be set at one time and before energizing the relay. The changes to the DIP switch settings when the mGARD-10-A relay is energized, may be performed without having any adverse effect on the relay. Please refer to Table 3.0, 3.2 and 3.4 for DIP switch set ...
Testing Ethernet Ports including Power Over Ethernet (802.3at and
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... manufacturers use is that the 1500 V rms test is for the port; it is up the designer to make the port meet this and not the component manufacturer. Competently designed ports will withstand 2.4 kV. If the voltage differential between the ends of a balanced system line does not exceed 4.8 kV, there w ...
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... level detector (LVD) which generates a static reset when the VDD supply is below a threshold voltage of 4.1 V. 3. The DiSEqC signalling must have a tone frequency of 2 2kHz (±20%) and an amplitude exceeding 150 mV peak to peak. 4. When the LVD is enabled (default state), it is mandatory not to conne ...
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... The AAT3685 is a highly integrated single cell lithiumion/polymer battery charger IC designed to operate from adapter or USB port VBUS supplies, while requiring a minimum number of external components. The device precisely regulates battery charge voltage and current for 4.2V lithium-ion/polymer bat ...
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SN74LVC1G11-Q1, Single 3-Input Positive

... No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhan ...
Input Diodes for ac Coupled Circuits
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assign - UMD Physics
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... labeled with their resistances. The ammeters are ideal meters that read and respectively. The direction of each loop and the direction of each current arrow that you draw on your own circuits are arbitrary. Just assign voltage drops consistently and sum both voltage drops and currents algebraically ...
ADP2114 Configurable, Dual 2 A/Single 4 A, Synchronous Step-Down DC-to-DC Regulator
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... When SYNC/CLKOUT is an output, a buffered clock of twice the switching frequency with a phase shift of 90° is available on this pin. When configured as an input, this pin accepts an external clock to which the converters are synchronized. The frequency select resistor, mentioned in the description o ...
System and device for supplying desired liquid volumes by means of
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... late the corresponding number of pump strokes and thus matic machines for distributing beverages and speci? the number of current pulses applied to the electromag cally warm beverages such as coffee percolators and net from the desired volume divided by the volume automatic machines for preparing an ...
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GE Energy 20A Digital MicroDLynx : Non-Isolated DC-DC Power Modules Data Sheet

... These modules operate over a wide range of input voltage (VIN = 3Vdc-14.4Vdc) and provide a precisely regulated output voltage from 0.6Vdc to 5.5Vdc, programmable via an external resistor and PMBusTM control. Features include a digital interface using the PMBusTM protocol, remote On/Off, adjustable ...
3.3 volt logic characteristics and applications
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Reactive Sputtering Using a Dual

... A dual-anode system does not demonstrate the “disappearing” anode problem commonly seen when depositing in other reactive deposition systems. The dual-anode system employs a transformer whose secondary coil has a center tap. The ends of the coil are connected to anodes while the center tap is connec ...
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Low Power, Buffered 24-Bit Sigma-Delta ADC AD7791
Low Power, Buffered 24-Bit Sigma-Delta ADC AD7791

... The device operates from an internal clock. Therefore, the user does not have to supply a clock source to the device. The output data rate from the part is software programmable and can be varied from 9.5 Hz to 120 Hz, with the rms noise equal to 1.1 µV at the lower update rate. The internal clock f ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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