
AD8350 数据手册DataSheet 下载
... ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8350 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to h ...
... ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8350 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to h ...
what is electricity? - SIPE Online Training
... When the current jumps to unsafe levels, the electromagnet is strong enough to pull down a metal lever connected to the switch linkage. k groves /e haller ...
... When the current jumps to unsafe levels, the electromagnet is strong enough to pull down a metal lever connected to the switch linkage. k groves /e haller ...
BTEC-Electronics
... P-type doping, boron or gallium is the dopant. Boron and gallium each have only three outer electrons. When mixed into the silicon lattice, they form "holes" in the lattice where a silicon electron has nothing to bond to. The absence of an electron creates the effect of a positive charge, hence the ...
... P-type doping, boron or gallium is the dopant. Boron and gallium each have only three outer electrons. When mixed into the silicon lattice, they form "holes" in the lattice where a silicon electron has nothing to bond to. The absence of an electron creates the effect of a positive charge, hence the ...
9 Network Analysis
... to find total resistance and total voltage, leaving total current as a single unknown value to calculate (and then that current was used to satisfy previously unknown variables in the reduction process until the entire circuit could be analyzed). With these problems, more than one parameter (variabl ...
... to find total resistance and total voltage, leaving total current as a single unknown value to calculate (and then that current was used to satisfy previously unknown variables in the reduction process until the entire circuit could be analyzed). With these problems, more than one parameter (variabl ...
Low Power, 16-Bit Buffered Sigma-Delta ADC AD7790
... Analog Input. AIN(+) is the positive terminal of the fully differential analog input. Analog Input. AIN(–) is the negative terminal of the fully differential analog input. Positive Reference Input. REFIN(+) can lie anywhere between VDD and GND + 0.1 V. The nominal reference voltage (REFIN(+) – REFIN ...
... Analog Input. AIN(+) is the positive terminal of the fully differential analog input. Analog Input. AIN(–) is the negative terminal of the fully differential analog input. Positive Reference Input. REFIN(+) can lie anywhere between VDD and GND + 0.1 V. The nominal reference voltage (REFIN(+) – REFIN ...
AD5247 数据手册DataSheet下载
... have three hard-coded slave address options available to allow users access to three of these devices on one I2C bus (see Table 8 for a full list of slave address locations). The resistance between the wiper and either end point of the fixed resistor varies linearly with respect to the digital code ...
... have three hard-coded slave address options available to allow users access to three of these devices on one I2C bus (see Table 8 for a full list of slave address locations). The resistance between the wiper and either end point of the fixed resistor varies linearly with respect to the digital code ...
BDTIC AN2010-01 MA200E12/17_EVAL
... voltage increases (close to DC-link voltage level). This behaviour can be practically used for short circuit detection and switching-off an IGBT. The short circuit duration time for Infineon 1200 V and 1700 V IGBT modules must not exceed 10µs. During this time the short circuit should be detected an ...
... voltage increases (close to DC-link voltage level). This behaviour can be practically used for short circuit detection and switching-off an IGBT. The short circuit duration time for Infineon 1200 V and 1700 V IGBT modules must not exceed 10µs. During this time the short circuit should be detected an ...
MAX16060/MAX16061/MAX16062 1% Accurate, Quad-/Hex-/Octal-Voltage µP Supervisors General Description
... asserted and the timer is cleared. The timer also clears whenever a reset is asserted or a rising or falling edge on WDI is detected. The watchdog timer enters a startup period that allows 54s for the first transition to occur before a reset. Leave WDI unconnected to disable the watchdog timer. The ...
... asserted and the timer is cleared. The timer also clears whenever a reset is asserted or a rising or falling edge on WDI is detected. The watchdog timer enters a startup period that allows 54s for the first transition to occur before a reset. Leave WDI unconnected to disable the watchdog timer. The ...
LTM8061 - 32V, 2A uModule Li-Ion/ Polymer Battery Charger
... enabled by connecting a 10kΩ, β = 3380 NTC thermistor from the NTC pin to ground. The pin sources 50μA, and monitors the voltage across the 10kΩ thermistor. When the voltage on this pin is above 1.36V (T < 0°C) or below 0.29V (T > 40°C), charging is disabled and the CHRG and FAULT pins are both pull ...
... enabled by connecting a 10kΩ, β = 3380 NTC thermistor from the NTC pin to ground. The pin sources 50μA, and monitors the voltage across the 10kΩ thermistor. When the voltage on this pin is above 1.36V (T < 0°C) or below 0.29V (T > 40°C), charging is disabled and the CHRG and FAULT pins are both pull ...
Circuit Problems
... Charge does NOT pile up and begin to accumulate at any given location such that the current at one location is more than at other locations. Charge does NOT become used up by resistors such that there is less of it at one location compared to another. The charges can be thought of as marching togeth ...
... Charge does NOT pile up and begin to accumulate at any given location such that the current at one location is more than at other locations. Charge does NOT become used up by resistors such that there is less of it at one location compared to another. The charges can be thought of as marching togeth ...
TPS76301 数据资料 dataSheet 下载
... The TPS763xx family of low-dropout (LDO) voltage regulators offers the benefits of low-dropout voltage, low-power operation, and miniaturized packaging. These regulators feature low dropout voltages and quiescent currents compared to conventional LDO regulators. Offered in a 5-terminal, small outlin ...
... The TPS763xx family of low-dropout (LDO) voltage regulators offers the benefits of low-dropout voltage, low-power operation, and miniaturized packaging. These regulators feature low dropout voltages and quiescent currents compared to conventional LDO regulators. Offered in a 5-terminal, small outlin ...
Student Biographies
... For ID of 0.5 mA the source voltage would be 6,000(0.0005) or 3 Volts which means the gate to source voltage is 5-3 or 2 Volts which is greater than the threshold voltage (+1 Volt) and the device is on. But is it saturated? The drain is at 10-(6,000)(0.0005) or 7 Volts VDS=7-3 or 4 Volts Since VDS ( ...
... For ID of 0.5 mA the source voltage would be 6,000(0.0005) or 3 Volts which means the gate to source voltage is 5-3 or 2 Volts which is greater than the threshold voltage (+1 Volt) and the device is on. But is it saturated? The drain is at 10-(6,000)(0.0005) or 7 Volts VDS=7-3 or 4 Volts Since VDS ( ...
Op-Amp Circuits
... The output goes positive when the non-inverting input (+) goes more positive than the inverting (-) input, and vice versa. The symbols + and – do not mean that that you have to keep one positive with respect to the other; they tell you the relative phase of the output. (Vin=V1-V2) A fraction of ...
... The output goes positive when the non-inverting input (+) goes more positive than the inverting (-) input, and vice versa. The symbols + and – do not mean that that you have to keep one positive with respect to the other; they tell you the relative phase of the output. (Vin=V1-V2) A fraction of ...
GX10-20 - Corona Supplies
... in order to obtain optimum matching of the inverter to the electrode system. ...
... in order to obtain optimum matching of the inverter to the electrode system. ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.