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LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FEEDBACK AMPLIFIER THS4271-EP FEATURES
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... amplifiers. The devices are available in SOIC, MSOP with PowerPAD™, and leadless MSOP with PowerPAD™ packages. The THS4271 may have low-level oscillation when the die temperature (also known as the junction temperature) exceeds +60°C and is not recommended for new designs. For more information, see ...
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... count, high-performance portable and cart-based ultrasound systems. The easy-to-use IC allows the user to achieve high-end 2D, PW, and CW Doppler (CWD) imaging capability using substantially less space and power. The highly compact imaging receiver lineup, including low-noise amplifier (LNA), variab ...
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... The same situation exists in motor and transformer applications, and in applications where significant distributed line capacitance exists. During start-up, a motor can pull 600% or more of its running current. Thus, a 3 amp motor may actually pull 18 amps or more during start-up. A contact rated at ...
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... Different from the Vdd tuning methods belonging to NBTI compensation techniques, this method uses lower Vdd to decrease the NBTI degradation rate and therefore belongs to NBTI mitigation techniques. Tuning Vth . From Figure 2c and d, although higher Vth leads to larger intrinsic delay, NBTI degradat ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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