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1. Introduction - About the journal
1. Introduction - About the journal

... There can also be problems in low power IC technologies especially in high frequency applications and low level of the output signal (for example several tens of A in current mode) [21-25]. Recently published quadrature oscillators contain one [25-28, 31], two [19, 22, 29, 32, 34] or three [21, 33] ...
3 Calculation of Short-Circuit Currents in Three
3 Calculation of Short-Circuit Currents in Three

AN4009 Alarm IC Sample Applications  INTRODUCTION
AN4009 Alarm IC Sample Applications INTRODUCTION

... Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in t ...
Triple-Push Operation for Combined Oscillation/Divison
Triple-Push Operation for Combined Oscillation/Divison

... developing MMW communication systems for commercial applications [1]–[5]. The immediately seen opportunities in this particular region of the spectrum include next-generation wireless personal area networks (WPANs) with applications in high definition video streaming and wireless Gigabit ethernet. I ...
electrical maesurements laboratory
electrical maesurements laboratory

chapter 28
chapter 28

Multiplying DACs Flexible Building Blocks
Multiplying DACs Flexible Building Blocks

MC33972, Multiple Switch Detection Interface with Suppressed
MC33972, Multiple Switch Detection Interface with Suppressed

AD5398A: 英文产品数据手册下载
AD5398A: 英文产品数据手册下载

... VDD = 3.6 V to 4.5 V; device operates over 2.7 V to 5.5 V; specified maximum sink current may not be achieved PD = 1 Output voltage range over which maximum 120 mA sink current is available Output voltage range over which 90 mA sink current is available To 10% of FS, coming out of power-down mode; V ...
Charge Pump Driver for LCD White LED Backlights ADM8845
Charge Pump Driver for LCD White LED Backlights ADM8845

... internally gained up by 120 within the ADM8845 to produce the ILED currents of up to 30 mA/LED (ILED = ISET × 120 and ISET = 1.18 V/RSET). The ADM8845 uses six individual current sinks to individually sense each LED current with a maximum matching performance of 1%. This current matching performance ...
Feb-1977 - HP Labs
Feb-1977 - HP Labs

... The system can switch, read, and store channels at rates up to 5.3 channels per second for dc measurements, or 4.5 chan nels per second for resistances and ac voltages (those with signal frequencies above 300 Hz — 1 channel per second for lower frequencies). The scanner can also be configured to c ...
HMC641LC4 数据资料DataSheet下载
HMC641LC4 数据资料DataSheet下载

... GaAs pHEMT SP4T switch in a compact 4x4 mm ceramic package. Covering DC to 20 GHz, this switch offers high isolation, low insertion loss and on-chip termination of isolated ports. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines fr ...
EPS12V - SMPS Switching Power Supply Design
EPS12V - SMPS Switching Power Supply Design

CC2541 - Texas Instruments
CC2541 - Texas Instruments

AD8132 (Rev. G)
AD8132 (Rev. G)

... quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The load current consists of the differential and common-mode currents flowing to the load, as ...
Chapter 4. Switch Realization
Chapter 4. Switch Realization

... A majority-carrier device: fast switching speed Typical switching frequencies: tens and hundreds of kHz On-resistance increases rapidly with rated blocking voltage Easy to drive The device of choice for blocking voltages less than 500V 1000V devices are available, but are useful only at low power le ...
Dual 256-Position SPI Digital Potentiometer AD5162
Dual 256-Position SPI Digital Potentiometer AD5162

... end-to-end resistance values (2.5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ), this low temperature coefficient device is ideal for high accuracy and stability variable resistance adjustments. The wiper settings are controllable through an SPI digital interface. The resistance between the wiper and either endpoint of ...
MAX11661–MAX11666 500ksps, Low-Power, Serial 12-/10-/8
MAX11661–MAX11666 500ksps, Low-Power, Serial 12-/10-/8

LTC4099 - Linear Technology
LTC4099 - Linear Technology

... The LTC4099 automatically limits its input current for USB compatibility. For automotive and other high voltage applications, the LTC4099 interfaces with an external switching regulator. Both the USB input and the auxiliary input controller feature Bat-Track optimized charging to provide maximum pow ...
exp04
exp04

Chapter 18 - La Sierra University
Chapter 18 - La Sierra University

... The inverting amplifier is a basic configuration in which the noninverting input is grounded (sometimes through a resistor to balance the bias inputs). Again, the difference between Vin and Vf is very small due to feedback; this implies that the inverting input is nearly at ground. This is referred ...
Miller Compensation in Two
Miller Compensation in Two

Product Specification
Product Specification

... (9) The register setting values are rewritten by the influence of static electricity, a noise, etc. to unsuitable value, incorrect operating may occur. It is suggested that the SPI interface will setup as frequently as possible. ...
Steady-State Analysis of Single Phase A.C. Circuit
Steady-State Analysis of Single Phase A.C. Circuit

... denote its voltage value as being 10 volts RMS. The qualifier “RMS” stands for Root Mean Square, the algorithm used to obtain the DC equivalent value from point on a graph (essentially, the procedure consists of squaring all the positive and negative points on a waveform graph, averaging those squar ...
Series and Parallel Circuits
Series and Parallel Circuits

... Current and Resistance in a Series Circuits The same idea can be extended to any number of resistances in series, not just two. The same current would exist in the circuit with a singe resistor, R, that has a resistance equal to the sum of the resistances of the two lamps. Such a resistance is calle ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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