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ADS5270 数据资料 dataSheet 下载
ADS5270 数据资料 dataSheet 下载

... Lead Temperature, 1.6mm (1/16" from case for 10s) ...
MC33975, MC9375A, Multiple Switch Detection Interface with
MC33975, MC9375A, Multiple Switch Detection Interface with

... The 33975 Multiple Switch Detection Interface with Suppressed Wakeup is designed to detect the closing and opening of up to 22 switch contacts. The switch status, either open or closed, is transferred to the microprocessor unit (MCU) through a serial peripheral interface (SPI). The device also featu ...
BDTIC
BDTIC

... generates the required secondary isolated unsymmetrical supply voltage of +16 V / -8 V. High and Low side driver voltages are independently generated by using one unipolar input voltage of 15 V. Additionally, the power supply is protected against gate – emitter short circuit of the IGBTs. In case of ...
Overcurrent and Distance Relays
Overcurrent and Distance Relays

... Such faults either simply cease at some stage or develop into lasting short–circuits. During intermittent activity, however, starpoint resistors in networks that are impedance–earthed may undergo thermal overloading. The normal earth– fault protection cannot reliably detect and interrupt the current ...
750 VDC TRACTION SYSTEM
750 VDC TRACTION SYSTEM

RC Circuits – AC Source
RC Circuits – AC Source

MAX9768 10W Mono Class D Speaker Amplifier with Volume Control General Description
MAX9768 10W Mono Class D Speaker Amplifier with Volume Control General Description

... single supply and can deliver up to 10W into an 8Ω speaker with a 14V supply. A selectable spread-spectrum mode reduces EMI-radiated emissions, allowing the device to pass EMC testing with ferrite bead filters and cable lengths up to 1m. The MAX9768 can be synchronized to an external clock, allowing ...
A Mod.ified Lightly Doped Drain Structure for VLSI
A Mod.ified Lightly Doped Drain Structure for VLSI

NX3P191 1. General description Logic controlled high-side power switch
NX3P191 1. General description Logic controlled high-side power switch

... NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary tes ...
•  Set-Top-Box Conditional Access and Pay-per-View •
• Set-Top-Box Conditional Access and Pay-per-View •

... Reset Input. This signal is the reset command to the card. ...
Electrical Tech Note — 105 - MSU College of Engineering
Electrical Tech Note — 105 - MSU College of Engineering

Laboratory Manual - Mohawk Valley Community College
Laboratory Manual - Mohawk Valley Community College

... bypassed. For components, a selection of standard value ¼ watt carbon film resistors ranging from a few ohms to a few megohms is required along with an array of typical capacitor values (film types recommended below 1 µF and aluminum electrolytics above). A decade resistance box and a 10 kΩ potentio ...
Laboratory #4 Diode Basics and Applications (II)
Laboratory #4 Diode Basics and Applications (II)

... supply to maintain its output voltage given changes in the input line voltage. Line regulation is expressed as percent of change in the output voltage relative to the change in the input line voltage. The load regulation is defined as equation (3): ...
MAX1490AEPG WORD
MAX1490AEPG WORD

... The MAX1480B/MAX1480C/MAX1490B feature reducedslew-rate drivers that minimize EMI and reduce reflections caused by improperly terminated cables, allowing error-free data transmission at data rates up to 250kbps. The MAX1480A/MAX1490A driver slew rate is not limited, allowing transmission rates up to ...
Bipolar High-voltage Differential Interface for
Bipolar High-voltage Differential Interface for

... have a positive polarity that is referenced to 0V, which is often ground. This input limitation is dictated by the single, positive supply commonly used. High voltage levels can be applied and compared providing the voltage is reduced by some means to a safe input level. Input voltage levels below 0 ...
General Description Features
General Description Features

... accurate complete single-chip temperature controllers for Peltier thermoelectric cooler (TEC) modules. On-chip power FETs and thermal control-loop circuitry minimize external components while maintaining high efficiency. Selectable 500kHz/1MHz switching frequency and a unique ripple-cancellation sch ...
Characteristics of output voltage and current of
Characteristics of output voltage and current of

Datasheet
Datasheet

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Integrated Synthesizer and VCO ADF4360-2 FEATURES

... Programmable dual-modulus prescaler 8/9, 16/17, 32/33 Programmable output power level 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode ...
Squishy Circuits as a Tangible Interface
Squishy Circuits as a Tangible Interface

... Circuits as a teaching tool in early childhood (preschool and kindergarten) in the future. ...
Chapter 23: Series and Parallel Circuits
Chapter 23: Series and Parallel Circuits

... as illustrated in Figure 23–2. Before making the final connection to the battery, their teacher asked them to predict the brightness of the two lamps. They knew that the brightness of a lamp depends on the current flowing through it. Pat said that only the lamp closer to the + terminal of the batter ...
SWITCHED CAPACITOR CIRCUITS
SWITCHED CAPACITOR CIRCUITS

MAX3223 数据资料 dataSheet 下载
MAX3223 数据资料 dataSheet 下载

... Package thermal impedance, θJA (see Notes 2 and 3): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W DW package . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W PW package . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W ...
MAX19793 1500MHz to 6000MHz Dual Analog Voltage Variable
MAX19793 1500MHz to 6000MHz Dual Analog Voltage Variable

LTC6406 - 3GHz, Low Noise, Rail-to-Rail Input
LTC6406 - 3GHz, Low Noise, Rail-to-Rail Input

... Note 3: A heat sink may be required to keep the junction temperature below the Absolute Maximum Rating when the output is shorted indefinitely. Long-term application of output currents in excess of the absolute maximum ratings may impair the life of the device. Note 4: The LTC6406C/LTC6406I are guara ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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