
AD7940 数据手册DataSheet下载
... The AD79401 is a 14-bit, fast, low power, successive approximation ADC. The part operates from a single 2.50 V to 5.5 V power supply and features throughput rates up to 100 kSPS. The part contains a low noise, wide bandwidth track-and-hold amplifier that can handle input frequencies in excess of 7 M ...
... The AD79401 is a 14-bit, fast, low power, successive approximation ADC. The part operates from a single 2.50 V to 5.5 V power supply and features throughput rates up to 100 kSPS. The part contains a low noise, wide bandwidth track-and-hold amplifier that can handle input frequencies in excess of 7 M ...
thyro-a - Advanced Energy
... The device may only be used for the purpose for which it was intended, as persons may otherwise be exposed to dangers (e. g. electric shock, burns) and plants also (e. g. overload). The user must therefore observe the following points: • It is not permitted to make any unauthorised modifications to ...
... The device may only be used for the purpose for which it was intended, as persons may otherwise be exposed to dangers (e. g. electric shock, burns) and plants also (e. g. overload). The user must therefore observe the following points: • It is not permitted to make any unauthorised modifications to ...
Pre-Configured Systems Datasheet
... 110/115/120VAC Systems.......................................................................................................... 89-138VAC 208/220/230/240VAC Systems.......................................................................................176-276VAC Over / Undervoltage Threshold (adjust ...
... 110/115/120VAC Systems.......................................................................................................... 89-138VAC 208/220/230/240VAC Systems.......................................................................................176-276VAC Over / Undervoltage Threshold (adjust ...
LTC3558
... The LTC®3558 is a USB battery charger with dual high efficiency switching regulators. The device is ideally suited to power single-cell Li-Ion/Polymer based handheld applications needing multiple supply rails. Battery charge current is programmed via the PROG pin and the HPWR pin with capability up t ...
... The LTC®3558 is a USB battery charger with dual high efficiency switching regulators. The device is ideally suited to power single-cell Li-Ion/Polymer based handheld applications needing multiple supply rails. Battery charge current is programmed via the PROG pin and the HPWR pin with capability up t ...
top plate. It is not - SMDP-VLSI
... appropriate choice of plates and connection between various metal and Poly Si layers available. It should be mentioned that each interconnect layer is insulated from the others by a SiO2 layer. Of the various structure shown, the four layer structure has the least parasitic capacitance. ...
... appropriate choice of plates and connection between various metal and Poly Si layers available. It should be mentioned that each interconnect layer is insulated from the others by a SiO2 layer. Of the various structure shown, the four layer structure has the least parasitic capacitance. ...
LTC4054L-4.2
... The charge cycle is terminated when the charge current falls to 1/10th the programmed value after the final float voltage is reached. This condition is detected by using an internal, filtered comparator to monitor the PROG pin. When the PROG pin voltage falls below 100mV1 for longer than tTERM (typi ...
... The charge cycle is terminated when the charge current falls to 1/10th the programmed value after the final float voltage is reached. This condition is detected by using an internal, filtered comparator to monitor the PROG pin. When the PROG pin voltage falls below 100mV1 for longer than tTERM (typi ...
SN74CBTU4411 数据资料 dataSheet 下载
... disabled channels are connected to VBIAS through a 400 Ω resistor. DQS_EN determines the output voltage for the disabled D10 ports. When DQS_EN is low, this voltage is VBIAS. When DQS_EN is high, the disabled D10 ports are connected to an internal voltage (VBIAS_DQS) source, which is approximately e ...
... disabled channels are connected to VBIAS through a 400 Ω resistor. DQS_EN determines the output voltage for the disabled D10 ports. When DQS_EN is low, this voltage is VBIAS. When DQS_EN is high, the disabled D10 ports are connected to an internal voltage (VBIAS_DQS) source, which is approximately e ...
... bypassed. For components, a selection of standard value ¼ watt carbon film resistors ranging from a few ohms to a few megohms is required along with an array of typical capacitor values (film types recommended below 1 µF and aluminum electrolytics above). A decade resistance box and a 10 kΩ potentio ...
GTL2012
... This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. ...
... This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. ...
TS2DDR2811 数据资料 dataSheet 下载
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
Voltage, energy and power in electric circuits
... What happens during this activity The BIG circuit is set up around the room. Have the room in darkness to add to the dramatic effect when switching the circuit on and to ensure that the bulb can be seen easily. The teacher collects the class together and points out the BIG circuit around the room. T ...
... What happens during this activity The BIG circuit is set up around the room. Have the room in darkness to add to the dramatic effect when switching the circuit on and to ensure that the bulb can be seen easily. The teacher collects the class together and points out the BIG circuit around the room. T ...
AD5444 数据手册DataSheet 下载
... The AD5444/AD5446 1 are CMOS 12-bit and 14-bit, current output, digital-to-analog converters (DACs). Operating from a single 2.5 V to 5.5 V power supply, these devices are suited for battery-powered and other applications. As a result of the CMOS submicron manufacturing process, these parts offer ex ...
... The AD5444/AD5446 1 are CMOS 12-bit and 14-bit, current output, digital-to-analog converters (DACs). Operating from a single 2.5 V to 5.5 V power supply, these devices are suited for battery-powered and other applications. As a result of the CMOS submicron manufacturing process, these parts offer ex ...
Circuit Analysis I
... Kirchhoff’s Current Law (KCL)...................................................................................................................2-6 Kirchhoff’s Voltage Law (KVL)...................................................................................................................2-7 Anal ...
... Kirchhoff’s Current Law (KCL)...................................................................................................................2-6 Kirchhoff’s Voltage Law (KVL)...................................................................................................................2-7 Anal ...
Parallel DCMs
... The startup behavior of a DCM array depends on the type of load: resistive or constant current. For a resistive load, the load current increases as the DCM array output voltage rises. On startup, DCMs have a soft-start ramp when operated alone; in an array, the DCMs don’t all turn on at the same tim ...
... The startup behavior of a DCM array depends on the type of load: resistive or constant current. For a resistive load, the load current increases as the DCM array output voltage rises. On startup, DCMs have a soft-start ramp when operated alone; in an array, the DCMs don’t all turn on at the same tim ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.