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paper
paper

... of an iron nickel alloy could be drawn down to complete a circuit by running current through a nearby coil. This device wasn’t compact and energy efficient enough to be practical for large-scale integration, but it created enough interest among researchers that they began exploring other ways to shr ...
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... section, is capable of maintain the original signal quality and avoiding problem. It reduces the leakage current by inserting extra sleep transistors between pullup and pull-down networks. As shown in Fig. 3 (a), a PMOS sleep transistor (S) is placed between pull-up network and network output and an ...
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... ViH MIN = minimum voltage acceptable as a logic HI input. VOL MAX = maximum voltage acceptable as a logic LO output. VOH MIN = minimum voltage acceptable as a logic HI output. These limiting voltages are shown in Fig. 1.1. These voltages are defined from the coordinates on the input-output transfer ...
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... transducer at frequency from 1MHz to 10MHz with an output power up to 120watts. Each channel has its own programmable high voltage generator and delay control and so it provides a perfect solution for applications with accurate focus control. For linear or annular array focus, apodization may need t ...
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4 - NRI Institute of Technology, Hyderabad

A Switched Current, Switched Capacitor Temperature Sensor in 0.6
A Switched Current, Switched Capacitor Temperature Sensor in 0.6

... However, even with perfect follow-on circuitry, a significant error source remains in the VBE mismatch of the substrate PNPs at different current densities. For the previous example, a mere 1.06mV mismatch produces a 2% error in degrees Kelvin or 6 degrees Centigrade at ambient temperature. This er ...
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... One critical application area is bus contention during the power-on phase of a system. This bus contention occurs because, during the power-on phase (system reset), the supervising circuit does not provide defined control signals even though the rest of the system may already be functional. Therefor ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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