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S. Mattiazzo1,2, M. Battaglia3,4, D. Bisello1,2, D. Contarato4, P. Denes4, P. Giubilato1,2,4, D. Pantano1,2, N. Pozzobon1,2, M. Tessaro2, J. Wyss2,5 1 Dipartimento di Fisica, Università degli Studi di Padova, I-35131 Padova, Italy; 2 Istituto Nazionale di Fisica Nucleare, Sezione di Padova, I-35131 Padova, Italy; 3 Department of Physics, University of California, Berkeley, CA 94720, USA; 4 Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA; 5 DiMSAT, Università degli Studi di Cassino, Cassino, Italy. Monolithic pixel detectors in 0.20µm Silicon On Insulator (SOI) technology have been developed, realized and characterized. This work shows the decisive effect of the substrate bias condition during irradiation on the total dose damage of the electronics. SOI technology for monolithic pixel sensors: Chip production: In the SOI technology CMOS electronics is implanted on a thin silicon layer on top of a buried oxide (BOX): this ensures full dielectric isolation, small active volume and low junction capacitance (higher latch-up immunity, lower power consumption, higher speed applications) OKI (Japan) provides 0.15µm and 0.20µm Fully Depleted (FD) SOI processes with high-resistivity substrate (700 ·cm) and vias etched through the oxide which contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. SOI-1 (2007) [Y. Arai, KEK] Fractional Yield: • 0.20µm OKI FD-SOI technology • 256256 analog pixels (13.7513.75µm2) • 4 analog outputs • 5mm chip, 3.2mm active • Just delivered • 0.20µm OKI FD-SOI technology • 128172 digital pixels (2020µm2) • 40172 analog pixels (2020µm2) • Optimized for low leakage current • Currently under test • 0.15µm OKI FD-SOI technology • 16050 digital pixels (1010µm2) • 160100 analog pixels (1010µm2) • MIPs detection • First radiation damage tests Only results on 0.20µm process are shown in the poster, as this process is optimized for low leakage currents and will be used for the development of future detectors. SOI-2-IMAGER (2009) SOI-2 (2008) Total dose tests: When exposed to ionizing radiation, electron-hole pairs are created inside the thick oxide. The X-ray irradiation facility installed at the INFN National Laboratory of Legnaro (Padova, Italy) and used for the total dose damage studies described in this poster is the Seifert Rp-149 Semiconductor Irradiation System Test structures: X-ray machine: If a depletion voltage is applied to the detector (substrate), a strong electrical field is present inside the BOX. OKI 0.20µm FD process 16 NMOS and 16 PMOS transistors with source in common, gate and drain separated Each transistor is surrounded by 1µm PSUB guard ring Both Body floating and Body Tie transistors W/L = 500 Normal, Low, High Voltage Threshold Tube with W (7.4-12.06 keV L-lines) anode. Maximum tube voltage 60 kV. Maximum tube current 50 mA. X,Y (motorized) and Z (manual) axis for accurate position setting of the tube. Irradiation in air at room temperature. Dose rate: 165rad(SiO2)/sec. Due to the presence of the electrical field, charges are immediately separated and do not recombine. The electron-hole pairs escaping recombination (fractional yield) lead to positive charge trapping throughout the BOX and consequently to an increase of the top-gate leakage current. Bias conditions during irradiation: THE TOTAL DOSE DAMAGE ON THE TRANSISTOR STRONGLY DEPENDS ON THE BIAS GIVEN TO THE SUBSTRATE DURING IRRADIATION NMOS and PMOS Body of Body Tie transistors at 0V. Drain and source at 0V, gate NMOS HIGH (1.8V), gate PMOS LOW (0V). Substrate bias voltage (Vback) : Vback = 0V, 5V, 10V with PSUB guard-ring floating Vback = 10V with PSUB guard-ring at 0V (is the PSUB guard-ring effective in containing the electrical field through the BOX?). NMOS transistor: (L = 0.50µm, W = 250µm, Normal Vthr, Core transistor, Body Tie) for four different bias conditions: 1.E-04 60 krad 100 krad 1.E-06 300 krad 1.E-08 1.1 Mrad 1.E-12 -0.2 2 Mrad 0.2 0.6 1 1.4 18 krad 23 krad 1.E-04 28 krad 30 krad 1.E-06 56 krad 1.E-08 1.E-12 -0.2 0.2 0.6 Vgs (V) Vgs (V) 1 1.4 33 krad 1.E-06 48 krad 100 krad 1.E-10 160 krad 1.E-12 -0.2 1.8 B or P(~5·1015cm-2) 43 krad 1.E-08 70 krad 1.E-10 1.8 1.E-02 1.E-04 680 krad 1.E-10 16 krad 1.E-02 PSUB GUARD-RING 55 krad BOX 62 krad 0.2 0.6 Vgs (V) 1 1.4 SOI electronic layer 1.E+01 pre 1.E-01 18 krad 1.E-03 28 krad 1.E-05 38 krad 1.E-07 68 krad 1.E-09 88 krad 1.E-11 128 krad 1.E-13 -0.2 208 krad 1.8 0.2 0.6 PSUB guard-ring The PSUB guard-ring is effective in limiting the backgate effect 1.4 1.E-02 1.E+00 1.2 1.E-04 Vthr (V) Ileak (A) 1.E-06 1.E-07 0.8 1.E-02 Vback = 2V 1.E-02 1.E-04 Vback = 4V 1.E-04 1.E-06 Vback = 6V 0.6 1.E-10 Vback = 12V 1.E-10 1.E-12 -0.2 Vback = 15V 1.E-12 -0.2 0.4 1.E-09 1.E-10 10V (PSUB guard @ GND) 1.E-11 1.E+03 10V (PSUB guard @ GND) 0.2 0 1.E+00 1.E+01 1.E+04 1.E+02 1.E+03 1.E-08 Vback = 10V 10V 0.2 0.6 1 1.4 Vback = 0V Vback = 2V Vback = 4V Vback = 6V Vback = 8V Vback = 10V Vback = 12V Vback = 15V 1.E-06 Vback = 8V 1.E-08 10V 1.E-08 Ids (A) 5V 5V 1.E+00 Vback = 0V 1 1.E-05 PSUB guard-ring “floating” PSUB guard-ring at GND 0V 0V 1.E-03 1.E+02 1.8 Threshold Voltage Leakage current 1.E+01 1.4 Vgs (V) The leakage current and the threshold voltage strongly depend on the bias condition during irradiation: the higher Vback, the higher Ileak and the lower the Vthr (greater damage on the BOX). 1.E-12 1.E+00 1 The PSUB guard-ring tied at GND during irradiation indeed limits the electrical field through the BOX and improves the radiation hardness of the device. Ids (A) 30 krad pre pre Vback = 10V (PSUB guard-ring @ GND) Ids (A) 1.E-02 1.E+00 1.E+00 Ids (A) pre Ids (A) Ids (A) 1.E+00 Vback = 10V (PSUB guard-ring Floating) Vback = 5V (PSUB guard-ring Floating) Vback = 0V (PSUB guard-ring Floating) 1.8 0.2 0.6 1 1.4 1.8 Vgs (V) Vgs (V) 1.E+04 Dose (krad) Dose (krad) C-V measure on SOI-2 chip: For Vback = 0V the transistor is still working properly up to doses of ~1Mrad. Expected curve (depletion increase) Vback [Toshinobu Miyoshi (KEK) presented at STD7, Hiroshima, 2009] B BURIED P-WELL (BPW) (~1·1012cm-2) SOI electronics layer BOX pixel Vback [Toshinobu Miyoshi (KEK), presented at STD7, Hiroshima, 2009] Conclusions and future studies: We verified the dependence of the total dose damage from the substrate bias condition during irradiation; This work was supported by the Director, Office of Science, of the U.S. Department of Energy under Contract no. DE-AC02-05CH11231 and by INFN and University of Padova, Italy. We are also grateful to Prof. Yasuo Arai (KEK) for the effective collaboration in the development of SOI pixel detectors and for providing us with the test structures. With the BPW, no back gate effect up to 80V (~60µm). A lower electric field in the BOX should also improve radiation hardness peripheral Buried P-Well (BPW) Acknowledgements: IR laser test on intpix3 (same pixel as intpix2) 200 180 160 140 120 100 80 60 40 20 0 Calculated Measured 0 20 40 60 80 100 120 Vback (V) References: • Y. Arai et al., Proceedings of SNIC Symposium, 2006. • M. Battaglia et al., Nuclear Instruments and Methods in Physics Research A, Vol. 583, Issues 2-3, 21 December 2007, p. 526-528. arXiv:0709.4218 [physics.ins-det] • M. Battaglia et al., Nuclear Instruments and Methods in Physics Research A, Vol. 604, Issues 1-2, 1 June 2009, p. 380-384. arXiv:0811.4540 [physics.ins-det] • M. Battaglia et al., M. Battaglia et al., Journal of Instrumentation (2009). arXiv:0903.3205 [physics.ins-det] • D. Bisello et al. Radiation Physics and Chemistry 71, 713 (2004). • Y. Arai talk at STD7, Hiroshima, September 2009. A low electrical field through the BOX would allow the transistors to work properly up to doses of ~ 1Mrad Both the backgate effect and the radiation sensitivity would improve, provided a method to keep low the potential under the BOX. Different solutions should be investigated: a different geometry of PSUB guard-ring implantation on the substrate a buried P-Well under the BOX in the next version of the SOI-2-imager Depletion depth W ( mm) Back gate effect With a standard PSUB implantation, for Vback > 10V, output starts decreasing due to back gate effect A new implant method was provided by OKI in 2008, consisting of a lightly doped P-well implanted below the BOX through the SOI layer. (700·cm is the nominal resistivity) ADC OUT [ADU] ADC OUT [ADU] IR laser test on intpix2 measured depletion is smaller than expected