• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
L6375S
L6375S

... In order to implement a short-circuit protection the output Power MOSFET is driven in linear mode to limit the output current to the Isc (1.1 A typical value). This condition (current limited to the Isc value) lasts for a Ton time interval, that can be set by means of a capacitor (Cdon) connected to ...
Electricity 4
Electricity 4

Lab 1 - ece.unm.edu
Lab 1 - ece.unm.edu

P10
P10

... voltage of its own, and is modeled by a resistive element Ri called the input resistance. The output port is modeled by a dependent voltage source AVi in series with the output resistance R0, where Vi is the potential difference between the input port terminals. Picture 1 shows a complete amplifier ...
Comparators - Portal UniMAP
Comparators - Portal UniMAP

GPIO_ExternalControl_2007-1-5
GPIO_ExternalControl_2007-1-5

... External Or Self Powered (to ground) ...
a CMOS Quad Sample-and-Hold Amplifier SMP04*
a CMOS Quad Sample-and-Hold Amplifier SMP04*

... SMP04 Single Supply Operation Grounding Considerations—In single supply applications, it is extremely important that the VSS (negative supply) pin be connected to a clean ground. This is because the hold capacitor is internally tied to VSS. Any noise or disturbance in the ground will directly coupl ...
Digital Voltmeter Circuit using ICL7107
Digital Voltmeter Circuit using ICL7107

... 1. It can measure voltages only up to a low range. 2. The IC used is a CMOS device and is highly static. 3. Difference in reference voltage for negative and positive input voltage can cause rollover error, i.e. a common mode error. 4. Using a full scale negative input voltage of 2V can sometimes cau ...
REVIEW FOR ELEC 105 MIDTERM EXAM #1 (FALL 2001)
REVIEW FOR ELEC 105 MIDTERM EXAM #1 (FALL 2001)

assignment 03- boolean algebra
assignment 03- boolean algebra

BD157/158/159 NPN Epitxial Silicon Transistor
BD157/158/159 NPN Epitxial Silicon Transistor

Electric Circuits
Electric Circuits

Experimental Set-up
Experimental Set-up

... current is proportional to the voltage, the data should be in a straight line and it should go through zero. For your two resistors, the y-intercept should be close to zero and, therefore, a proportional relationship should exist between voltage and current. Write the equation for each resistor in t ...
solutions
solutions

Questions
Questions

Series and Parallel Circuits: Comparing Various Parameters J0901
Series and Parallel Circuits: Comparing Various Parameters J0901

... voltage of both, series & parallel circuit. The values obtained from this measurement, were used to calculate the voltage, current, total resistance using Ohm#s Law and the individual & total power of both the circuits. Results The voltage drop across each resistor in the series circuit was verified ...
Voltage balancing resistors
Voltage balancing resistors

... Voltage balancing resistors Ideally when capacitors are placed in series the voltage across each capacitor should be distributed evenly across the capacitors. This does not always occur as intended due to the variations in the leakage currents of the capacitors. The variations in leakage current can ...
Working with the 555:
Working with the 555:

... AND gate, OR gate, NAND gate, NOR gate, XOR gate & N-XOR gate. For the function of the gates & their truth tables, refer the datasheets of the gates or the presentation available on the club website. ...
- CAREERFUNDA.IN
- CAREERFUNDA.IN

... 51) Large size alternators are excited with? 52) The time taken by the gas turbine to come into normal speed after it is stopped a)1hr b)30min ...
Study of logic gates
Study of logic gates

Voltage Trackers-pb
Voltage Trackers-pb

... dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components ca ...
Name: Date: Level: NOCTI Remediation of Electrical Measuring
Name: Date: Level: NOCTI Remediation of Electrical Measuring

Circuits for multiple valued logic—A tutorial and appreciation
Circuits for multiple valued logic—A tutorial and appreciation

... designers in the multi-valued area[l]A large variety of techniques and technologies have been exploited or are about to be. We have seen recent offerings, of direct interest to the multi-valued discipline, of the multiemitter bipolar technology of Transistor-Transistor Logic (T2L), of variations of ...
Capacitor Self
Capacitor Self

ECE 301 – Digital Electronics
ECE 301 – Digital Electronics

... At the output of each AND gate At the corresponding inputs of the OR gate Two bubbles on the same signal cancel (A'' = A) ...
< 1 ... 480 481 482 483 484 485 486 487 488 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report