• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
basic_CMOS_technology
basic_CMOS_technology

... • For PMOS transistors the same concepts are valid except that: – All voltages are negative (including Vth) – Were we used bigger than you should use smaller than – The drain current actually flows out of the transistor instead of into the transistor. ...
Chapter 21
Chapter 21

Feb
Feb

Terminations for Advanced CMOS Logic
Terminations for Advanced CMOS Logic

The Alliance Pad
The Alliance Pad

... There are five concentric metallic rings: vdde & vsse for pad-drivers, vddi & vssi for the core, and the clock ring. All pad-drivers contain five piece of metal in order to generate these rings when they are disposed all around the core. In a structural description this means that at least five port ...
LM158 LM258 LM358 LM2904 Low Power Dual Operational
LM158 LM258 LM358 LM2904 Low Power Dual Operational

... output source current which is available at 25§ C provides a larger output current capability at elevated temperatures (see typical performance characteristics) than a standard IC op amp. The circuits presented in the section on typical applications emphasize operation on only a single power supply ...
05AP_Physics_C_-_Electric_Circuits
05AP_Physics_C_-_Electric_Circuits

L(µH)= .002l 2.5 log10 4 ld −0.75 XL = 2πfL = 2•3.14
L(µH)= .002l 2.5 log10 4 ld −0.75 XL = 2πfL = 2•3.14

Differntial Ring Voltage Controlled Oscillator -A
Differntial Ring Voltage Controlled Oscillator -A

... modern communication systems, there is a calculated gap between the adjacent channels for the efficient use of frequency spectrum. Therefore, in order to avoid interference and noise problems, the characteristics of an oscillator are of much importance. Among the compilation of signals, oscillator m ...
LP2980-ADJ Micropower SOT, 50 mA Ultra Low
LP2980-ADJ Micropower SOT, 50 mA Ultra Low

... The value of θJ-A for the SOT-23 package is 300˚C/W. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Note 4: If used in a dual-supply system where the regulator load is returned to a negative supply, the LP2980- ...
Operator´s Manual Charge Preamplifiers ICP100 / 110 / 120
Operator´s Manual Charge Preamplifiers ICP100 / 110 / 120

Dual Gate MOSFET Methodology to Design PASTA
Dual Gate MOSFET Methodology to Design PASTA

Notes
Notes

Sc9 - D 2.2 (teacher notes)
Sc9 - D 2.2 (teacher notes)

... Need a computer - Activity #1: http://phet.colorado.edu/en/simulation/ohms-law Activity #2 : http://phet.colorado.edu/en/simulation/resistance-in-a-wire ...
Abstracts
Abstracts

... at input port followed by a LCL resonant circuit to assist in soft-switching of switches and diodes, and finally a voltage doubler circuit at output port to enhance the voltage gain by 2x. The LCL resonant circuit may also add a suitable voltage gain to the converter. Therefore, overall high voltage ...
Document
Document

... applied across a resistance of 1 W results in a current of 1 A. ...
PT4110
PT4110

... very careful layout for stable operation and low noise. To maximize efficiency, switch rise and fall times are made as short as possible. To prevent electromagnetic interference (EMI) problems, proper layout of the high frequency switching path is essential. The voltage signal of the SW pin has shar ...
Chapter 14: Inductive Transients
Chapter 14: Inductive Transients

Gates and Circuits
Gates and Circuits

... Digital circuits can be used to store information These circuits form a sequential circuit, because the output of the circuit is also used as input to the circuit ...
click here
click here

... This was consistent with the data sheets. To really get a reasonable gain control range, one must drop the voltage on G2 below that of the source. A simple way to do this is to bias the source to a positive voltage with a pair of diodes. See section 6.2 in EMRFD. If higher current is desired in orde ...
Static and Current Electricity
Static and Current Electricity

1 Measuring Charging Currents: RC Circuits, Electrochemical
1 Measuring Charging Currents: RC Circuits, Electrochemical

pg 4 - Tegan Lighting
pg 4 - Tegan Lighting

... taps (12V, 13V, or 24V, 26V). Loads may be connected to one (1) of the primary taps up to the full watt rating of the Power Supply Center. The advantage is that the PSC can be tapped to recover voltage drop and produce between 85%-100% light output. See voltage drop calculator on page 10. ...
Pulse Converters
Pulse Converters

... Frequency to DC isolator / converter, 19..40Vdc, 19..28 Vac ...
DC1886A - LTC4232: 5A Integrated Hot Swap
DC1886A - LTC4232: 5A Integrated Hot Swap

... Circuit Testing Notes: As in all high current testing, it is a good idea to use twisted pair power leads to minimize circuit inductance. Under step loads significant voltage spikes can occur as a result of this inductance causing false overvoltage or undervoltage trips. If there is significant lead ...
< 1 ... 478 479 480 481 482 483 484 485 486 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report