
Electric Circuits - Wikispaces
... stop the electrons, just slow them down a bit and cause the system to waste energy. ...
... stop the electrons, just slow them down a bit and cause the system to waste energy. ...
Chapter16
... – Have different electrical properties – Differences result in different voltagecurrent relationships ...
... – Have different electrical properties – Differences result in different voltagecurrent relationships ...
Electric Circuits
... Resistance (R) – is defined as the restriction of electron flow. It is due to interactions that occur at the atomic scale. For example, as electron move through a conductor they are attracted to the protons on the nucleus of the conductor itself. This attraction doesn’t stop the electrons, just slow ...
... Resistance (R) – is defined as the restriction of electron flow. It is due to interactions that occur at the atomic scale. For example, as electron move through a conductor they are attracted to the protons on the nucleus of the conductor itself. This attraction doesn’t stop the electrons, just slow ...
Power Factor Correction
... 3 phase inputs use passive PFC to give a typical PF of 0.8 to 0.9. Passive PFC is much simpler to implement than active PFC particularly at the higher power levels associated with 3 phase supplies. ...
... 3 phase inputs use passive PFC to give a typical PF of 0.8 to 0.9. Passive PFC is much simpler to implement than active PFC particularly at the higher power levels associated with 3 phase supplies. ...
The primary current, , in a conductor through a magnetic core will
... If there is no power lost in the toroid and the compensation winding, then the equivalent insertion impedance, , of the Current Transducer can be estimated by equating the power dissipated in with the power dissipated in the Burden Resistor . This shows that the equivalent insertion impedanc ...
... If there is no power lost in the toroid and the compensation winding, then the equivalent insertion impedance, , of the Current Transducer can be estimated by equating the power dissipated in with the power dissipated in the Burden Resistor . This shows that the equivalent insertion impedanc ...
SG3524 SMPS control circuit
... shutdown terminal: i.e., the output will be off with Pin 4 open and on when it is grounded. Finally, foldback current limiting can be provided with the network of Figure 10. This circuit can reduce the short-circuit current (ISC) to approximately one-third the maximum available output current (IMAX) ...
... shutdown terminal: i.e., the output will be off with Pin 4 open and on when it is grounded. Finally, foldback current limiting can be provided with the network of Figure 10. This circuit can reduce the short-circuit current (ISC) to approximately one-third the maximum available output current (IMAX) ...
Electricity Notes
... alternating current (AC). The electron flow in AC is the same as in DC with an exception – the current flow periodically changes direction. In this United States, alternating current changes polarity at the rate of sixty cycles per second (60 Hz). This means that the electricity changes polarity (di ...
... alternating current (AC). The electron flow in AC is the same as in DC with an exception – the current flow periodically changes direction. In this United States, alternating current changes polarity at the rate of sixty cycles per second (60 Hz). This means that the electricity changes polarity (di ...
OL2068 - Quantum Devices, Inc.
... An internal ultra low drop voltage regulator with typical 5.0 V supplies the internal logic to reduce power dissipation. Some applications require additional 5V ( i.e. for an LED driver in an optical encoder). This voltage can be sourced out of the line driver internal voltage regulator ( 5mA max.). ...
... An internal ultra low drop voltage regulator with typical 5.0 V supplies the internal logic to reduce power dissipation. Some applications require additional 5V ( i.e. for an LED driver in an optical encoder). This voltage can be sourced out of the line driver internal voltage regulator ( 5mA max.). ...
MOS Logic and Gate Circuits
... ` NMOS Only Switch • Disadvantage: – It can be bad because the signal can be degraded – We do not allow a few gates in series for one signal (Pure TG logic is not regenerative, the signal gradually degrades after passing through a number of TGs) ...
... ` NMOS Only Switch • Disadvantage: – It can be bad because the signal can be degraded – We do not allow a few gates in series for one signal (Pure TG logic is not regenerative, the signal gradually degrades after passing through a number of TGs) ...
EUP7915 数据手册DataSheet 下载
... EUP7915 input pin and ground (the amount of the capacitance may be increased without limit). This capacitor must be located a distance of not more than 1cm from the input pin and returned to a clean analog ground. Any good quality ceramic, tantalum, or film capacitor may be used at the input. If a t ...
... EUP7915 input pin and ground (the amount of the capacitance may be increased without limit). This capacitor must be located a distance of not more than 1cm from the input pin and returned to a clean analog ground. Any good quality ceramic, tantalum, or film capacitor may be used at the input. If a t ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.