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Low-frequency Noise Considerations for CMOS Analog Circuit
Low-frequency Noise Considerations for CMOS Analog Circuit

... circuits where the operating points of the devices undergo almost every value between maximum and minimum supply voltage for both gate and drain. As a consequence operating point dependent signal transfer functions including non-linear effects (e.g. frequency-mixing) have to be taken into account. A ...
DMOS dual full bridge driver with PWM current controller
DMOS dual full bridge driver with PWM current controller

... The L6227Q includes a constant off time PWM current controller for each of the two bridges. The current control circuit senses the bridge current by sensing the voltage drop across an external sense resistor connected between the source of the two lower power MOS transistors and ground, as shown in ...
0128 - Dual FET-Input, Low Distortion Operational Amplifiers
0128 - Dual FET-Input, Low Distortion Operational Amplifiers

... NOTE: Design equations and component values are approximate. User adjustment is required for optimum performance. ...
64K x 1 Static RAM
64K x 1 Static RAM

Electronic Thermometer with Fahrenheit Readout
Electronic Thermometer with Fahrenheit Readout

Exercises on chapter 1:| Calculate the intrinsic carrier concentration
Exercises on chapter 1:| Calculate the intrinsic carrier concentration

BIPOLAR JUNCTION TRANSISTORS BIPOLAR JUNCTION
BIPOLAR JUNCTION TRANSISTORS BIPOLAR JUNCTION

... base, and IE = 0. However, with the emitter open, we find that a reverse saturation current ICO flows between the base and the collector (CB acting as a reverse-biased diode). Usually, ICO will be in the nano- or micro-ampere range. Even when VCB is increased, IC will remain constant at ICO , becaus ...
LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input
LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input

... mode range of the LMC7221 is slightly larger than the actual power supply range. This wide input range means that the comparator can be used to sense signals close to the power supply rails. This wide input range can make design easier by eliminating voltage dividers, amplifiers, and other front end ...
Definitions for overhead and underground electric lines
Definitions for overhead and underground electric lines

Dual FET-Input, Low Distortion Operational Amplifier
Dual FET-Input, Low Distortion Operational Amplifier

... NOTE: Design equations and component values are approximate. User adjustment is required for optimum performance. ...
Exercise 1:
Exercise 1:

... Exercise 1: Ohm’s Law Begin by reading the material on measuring voltage prepared by Prof E. J. Mastascusa at Bucknell University. Next create the following circuit on your breadboard: ...
BusArchitecture
BusArchitecture

BRHEALTH0511
BRHEALTH0511

... 150 mA capless ultra-low-drop linear regulator simplifies power management designs The LDCL015XX provides 150 mA from an input voltage ranging from 1.8 to 5.5 V, with a typical dropout voltage of 50 mV. It is stable with no input or output capacitor. Low quiescent current, low noise and capless oper ...
LM148/LM248/LM348 Quad 741 Op AmpsLM149 Wide Band
LM148/LM248/LM348 Quad 741 Op AmpsLM149 Wide Band

... Note 1: Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded. Note 2: The maximum power dissipation for these devices must be derated at elevated temperatures and is dicate ...
Intro to circuits
Intro to circuits

... • Remember the water lab and the upright tubes with the water in them? • The analog of water pressure was resistance. • Recall what happened when you went across resistors: the water pressure dropped. • The analog in a real circuit is that the voltage drops when current goes across a resistor. ...
Data Sheet  Features General Description
Data Sheet Features General Description

... drive Hall IC manufactured by special CMOS process. This IC consists of voltage reference, Hall sensor, signal amplifier, wave shaping circuit, locked rotor detector, locked rotor protection and restart circuit, output drive circuit, etc.. To allow survival in a harsh environment and in consideratio ...
Heritage Institute of Technology
Heritage Institute of Technology

Chapter 1 Variable and Circuit Elements
Chapter 1 Variable and Circuit Elements

modular honours degree course
modular honours degree course

... b) Figure 2.2 shows a single transistor amplifier. If the transistor hFE is known to be about 200 calculate, using a simplified hybrid- model, the approximate rms voltage across, and hence power delivered to, the load RL. Assume the input voltage V = 3 + 0.05sin(t) volts and that the frequency is ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)

PROJEC
PROJEC

... enables a voltage to be applied across a load in either direction. These circuits are often used to allow DC motors to run forwards and backwards. H-bridges are available as integrated circuits, or can be built from discrete components. In this project the first type is used ; a dual full bridge dri ...
Electronic Circuits
Electronic Circuits

Lecture 11 Power Device (1) - Purdue College of Engineering
Lecture 11 Power Device (1) - Purdue College of Engineering

Lecture 7 Overview - Home - University of Delaware Dept
Lecture 7 Overview - Home - University of Delaware Dept

... • Recall the integrator: In practice, a high-resistance resistor should be added in parallel with the capacitor to ensure feedback under DC, when the capacitive impedance is high ...
21 Lab 4: Ohm`s Law
21 Lab 4: Ohm`s Law

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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