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Transcript
Exercises on chapter 1:| 1.1 Calculate the intrinsic carrier concentration in silicon and germanium at a) T=100K , b) T= 500K 1.2 Find the concentrations electrons and holes in a simple of silicon that has a concentration of donor atoms equal to 5X1015cm-3. Is the semiconductor n-type or p-type. 1.3 a) b) c) The electron concentration in silicon at T= 300K is no=5X1015cm-3. Determine the hole concentration Is the material n-type or p-type? What is the impurity doping concentration? 1.4 Determine the built-in potential barrier Vbi in a silicon pn junction for a) Nd=Na=1016cm-3 b) Nd= 1018cm-3 , Na=1016cm-3 1.5 Consider a uniformly doped GaAs pn junction with doping concentrations of Na=5X1018cm-3 and Nd= 5X10-3. Plot the built-in potential barrier Vbi versus Temperature for 200K ≤ T ≤ 500K. 1.6 For a pn junction diode, what must be the forward-bias voltage to produce a current of 150µA if a) Is = 10-11A b) Is = 10-13A. 1.7 A silicon pn junction diode has an emission coefficient of n=1. The diode current is ID= 1mA when VD= 0.7V. What is the reversed-bias saturation current. 1.8 Determine the diode current at room temperature for silicon diode with Is= 50nA and an applied forward bias of 0.6 V. Repeat the above calculation for T=1000C. Assume that Is has increased to 5µA 1.9 In the diode circuit Shown below , find the diode voltage and the supply voltage V such that the current is ID = 0.4mA. Assume the diode cut in voltage Vγ= 0.7V . a) Determine the power dissipated in the diode. Repeat part a) if Vps=0.5V