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FAN6961 Boundary Mode PFC Controller FAN6961 —Boundary Mode PFC Controller Features
FAN6961 Boundary Mode PFC Controller FAN6961 —Boundary Mode PFC Controller Features

... controller IC intended for controlling PFC preregulators. The FAN6961 provides a controlled on-time to regulate the output DC voltage and achieve natural power factor correction. The maximum on-time of the external switch is programmable to ensure safe operation during AC brownouts. An innovative mu ...
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... source? How much? Ans: Since the 1A from the current source is gone, the 5V would have to supply this current to maintain KVL in the right mesh. The current would flow OUT from the source: P5v Source=5V(-1A)= -5W, generating. 9) In the circuit below, the voltage source, V1, will burn up if it has to ...
SILICON DESIGNS, INC.
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... The model 2266 accelerometer module combines an integrated SDI low noise accelerometer with high drive, low impedance buffering for measuring acceleration in commercial/industrial environments. It is tailored for zero to medium frequency instrumentation applications. The anodized aluminum case is ep ...
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... Erratic behavior (and/or) shutdown: 1) The power supply will shut down if there is a short circuit condition on any one of the strobe heads. If the electrical conductors connecting the power supply to the strobe heads are exposed to water, a short circuit will result. The first sign is intermittent ...
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... resistance during a 95 ºC - 0 s Æ 53 ºC - 0 s Æ 72 ºC - 0 s cycle. Two different slopes (green and blue boxes) can be distinctly observed during cooling (no actuator current) and heating periods, with punctuated transitions in between. The current-dependant effect is most marked at 72 ºC (black circ ...
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... For this step we had to build the circuit of figure 10 and then use the triple output power supply for Vin and the other power supply for Vdc = 1.5V. Then we connected the com of the triple output power supply to the negative terminal of the other power supply. Then We measured Vout while varying Vi ...
ISSCC 2015 / SESSION 22 / HIGH
ISSCC 2015 / SESSION 22 / HIGH

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... ultimately presenting a PTAT voltage across R13, the same one assumed and used in Eq. 2, where R12 is the series combination of R14 and R15. In the end, coefficients A, B, and C (i.e., R11-R15) from Eqs. (2) and (4) are designed to cancel and balance the CTAT behavior of diode voltage VD with the PT ...
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... A: The first source converts to 10V/1k=10mA in parallel with 1k. The second converts to 20V/2k=10mA in parallel with 2k. This leaves a complete parallel-only circuit consisting of 20mA feeding 1k||2k||3k=545.5. The parallel voltage is 20mA*545.5=10.91V B: For superposition, consider each source by i ...
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... Currently, we have examined three separate methods to reduce total leakage in a circuit—input vector control, MTCMOS and variable threshold CMOS design. The input vector control method was motivated by the fact that in stacked circuits gate leakage has a much greater contribution to the overall leak ...
Section B7: Filtering
Section B7: Filtering

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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