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23.1 0.45-V Input On-Chip Gate Boosted (OGB) Buck Converter in
23.1 0.45-V Input On-Chip Gate Boosted (OGB) Buck Converter in

... A 0.45-V input, 0.4-V output on-chip gate boosted (OGB) buck converter with clock gated digital PWM controller in 40-nm CMOS achieved the highest efficiency to date with the output power less than 40μW. A linear delay trimming by a logarithmic stress voltage (LSV) scheme to compensate for the die-to ...
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Chapter 1 - UniMAP Portal

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Phys 345 Electronics for Scientists

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... Micro-MBC-2 is a dual channel, low profile LithiumNiobate modulator bias controller. Based on digital signal processing (DSP) technique and highly sensitive and low noise circuits, the Micro-MBC-2 can perform excellent bias control for two modulators simultaneously. Each channel can be configured by ...
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1 - School-Portal.co.uk

... If an object becomes highly charged then the potential difference between then object and the ground increases and the objects will discharge. When a charged object discharges (goes to ground) then a spark might occur. This is the electrons jumping from the object to the earthed conductor. ...
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... Any network of resistors and batteries having 2 output terminals may be replaced by a series combination of resistor and battery ...
Ohm`s law, combinations of resistors, and multi-meters
Ohm`s law, combinations of resistors, and multi-meters



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Lecture 1: Introduction Some Definitions:

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Transistors and Amplifiers

Click Here (.doc)
Click Here (.doc)

... Step 2 of part 2 was component installation. I had to solder capacitors, regulators, heat sinks, resistors, stability capacitors, and wires to the circuit I have been working on which is shown below. It was important to be very carful with soldering the components in this section. It was necessary ...
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electrical circuits - Riverside Rebel Science

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hmc424lp3 product note

... package. The attenuator covers a frequency range from DC to 13 GHz with a typical insertion loss of less than 4 dB. Major attenuation steps are 0.5(LSB), 1, 2, 4, 8, and 16 dB with total attenuation of 31.5 dB. Attenuation accuracy is excellent at ± 0.5 dB typical step error with an IIP3 of +32 dBm. ...
a4academics.com
a4academics.com

EEG 443
EEG 443

... RPM. The speed of this particular motor is varied by varying supply voltage. (c) With the generator switch in the SYNC.RUN position, energize the generator exciter, then raise the field current to 0.1 A, make sure the speed is at rated value, then record the generator line voltage. Increase the fiel ...
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Ohm`s Law

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Electronic Troubleshooting

< 1 ... 486 487 488 489 490 491 492 493 494 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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