Download SS9012 PNP Epitaxial Silicon Transistor

SS9012
SS9012
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
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•
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High total power dissipation. (PT=625mW)
High Collector Current. (IC= -500mA)
Complementary to SS9013
Excellent hFE linearity.
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
-40
Units
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = -100µA, IE =0
Min.
-40
BVCEO
Collector-Emitter Breakdown Voltage
IC = -1mA, IB =0
-20
BVEBO
Emitter-Base Breakdown Voltage
IE = -100µA, IC =0
-5
ICBO
Collector Cut-off Current
VCB = -25V, IE =0
IEBO
Emitter Cut-off Current
VEB = -3V, IC =0
hFE1
hFE2
DC Current Gain
VCE = -1V, IC = -50mA
VCE = -1V, IC = -500mA
VCE (sat)
Collector-Emitter Saturation Voltage
VBE (sat)
Base-Emitter Saturation Voltage
VBE (on)
Base-Emitter On Voltage
VCE = -1V, IC = -10mA
Typ.
Max.
Units
V
V
V
64
40
-100
nA
-100
nA
120
90
202
IC = -500mA, IB = -50mA
-0.18
-0.6
V
IC = -500mA, IB = -50mA
-0.95
-1.2
V
-0.67
-0.7
V
-0.6
hFE Classification
Classification
D
E
F
G
H
hFE1
64 ~ 91
78 ~ 112
96 ~ 135
112 ~ 166
144 ~ 202
©2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
SS9012
Typical Characteristics
-50
1000
IB=-300µA
VCE = -1V
-40
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB=-250µA
IB=-200µA
-30
IB=-150µA
IB=-100µA
-20
IB=-50µA
-10
10
-10
-0
-0
-10
-20
-30
-40
100
-50
Figure 2. DC current Gain
-1000
VBE(sat)
-100
VCE(sat)
IC=10IB
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
-100
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10
-10
-100
1000
VCE=-6V
100
10
1
-1
-10
-100
-1000
-10000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A3, May 2002
SS9012
Package Demensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5