
AN994
... High-side driver output. The output stage can deliver a 400 mA source and a 650 mA sink (typical values). The circuit guarantees 0.3 V maximum between this pin and Vout (at Isink = 10 mA) with VCC > 3 V and lower than the turn-on threshold. This removes the need for the bleeder resistor connected be ...
... High-side driver output. The output stage can deliver a 400 mA source and a 650 mA sink (typical values). The circuit guarantees 0.3 V maximum between this pin and Vout (at Isink = 10 mA) with VCC > 3 V and lower than the turn-on threshold. This removes the need for the bleeder resistor connected be ...
Chapter 6 BUILDING A HOMEBREW QRP
... the gouge won’t skate across the surface and into your hand. Ouch! Obviously two “trenches” can isolate a strip of copper that serves as wire or “trace.” Often I just isolate little islands of PC trace onto which I solder short component leads. I usually solder components to the surface, rather than ...
... the gouge won’t skate across the surface and into your hand. Ouch! Obviously two “trenches” can isolate a strip of copper that serves as wire or “trace.” Often I just isolate little islands of PC trace onto which I solder short component leads. I usually solder components to the surface, rather than ...
FEATURES TYPICAL APPLICATION CIRCUITS
... Junction-to-ambient thermal resistance (θJA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to ...
... Junction-to-ambient thermal resistance (θJA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to ...
Electronic Scale with the Arduino Microcontroller
... Optional Extra Credit: Op-amps and Amplifier Circuits Figure 7 shows two common packages for operational amplifiers. The single package on the left contains one operational amplifier. The LF741 was one of the earliest IC op-amps and is still widely used. There are many, many varieties of op-amps ava ...
... Optional Extra Credit: Op-amps and Amplifier Circuits Figure 7 shows two common packages for operational amplifiers. The single package on the left contains one operational amplifier. The LF741 was one of the earliest IC op-amps and is still widely used. There are many, many varieties of op-amps ava ...
OPA602 High-Speed Precision Difet OPERATIONAL AMPLIFIER
... Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such informati ...
... Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such informati ...
MAX4080/MAX4081 76V, High-Side, Current-Sense Amplifiers with Voltage Output General Description
... backplane, and other systems where high-voltage current monitoring is critical. The MAX4080 is designed for unidirectional current-sense applications and the MAX4081 allows bidirectional current sensing. The MAX4081 single output pin continuously monitors the transition from charge to discharge and ...
... backplane, and other systems where high-voltage current monitoring is critical. The MAX4080 is designed for unidirectional current-sense applications and the MAX4081 allows bidirectional current sensing. The MAX4081 single output pin continuously monitors the transition from charge to discharge and ...
Bsc_ElexPassIstAndII.. - Devi Ahilya Vishwavidyalaya
... P-N junction- Forward and Reverse bias of Diode. Concept of recombination of carriers, temperature variation of Forward and Reverse Current through the P-N Junction. Characteristics of Forward & Reverse Bias Diode, Dynamic and Static Resistances, Voltage dependent Junction Capacitance of a PN juncti ...
... P-N junction- Forward and Reverse bias of Diode. Concept of recombination of carriers, temperature variation of Forward and Reverse Current through the P-N Junction. Characteristics of Forward & Reverse Bias Diode, Dynamic and Static Resistances, Voltage dependent Junction Capacitance of a PN juncti ...
Reference
... Each student should have his own report. The lab reports are intended to serve two equally important purposes. First, they indicate your technical comprehension of the topics addressed in the labs, and second, they indicate your ability to present and discuss your results in a clear and concise mann ...
... Each student should have his own report. The lab reports are intended to serve two equally important purposes. First, they indicate your technical comprehension of the topics addressed in the labs, and second, they indicate your ability to present and discuss your results in a clear and concise mann ...
LT1509 Power Factor and PWM Controller BLOCK DIAGRAM W
... when the current loop reference signal is small, lower gain will distort the reference signal and line current. But, if signal gain at switching frequency is too high, the system behaves more like a current mode system and can cause ...
... when the current loop reference signal is small, lower gain will distort the reference signal and line current. But, if signal gain at switching frequency is too high, the system behaves more like a current mode system and can cause ...
MAX16946/MAX16947 Remote Antenna, Current-Sense and LDO/Switches EVALUATION KIT AVAILABLE
... MAX16946 provides a fixed regulated 8.5V output voltage or an adjustable 3.3V to 15V output voltage. The MAX16946 can also be configured as a switch, while the MAX16947 is only available as a switch. The input voltage range for both devices extends from 4.5V to 18V (45V tolerant), making the devices ...
... MAX16946 provides a fixed regulated 8.5V output voltage or an adjustable 3.3V to 15V output voltage. The MAX16946 can also be configured as a switch, while the MAX16947 is only available as a switch. The input voltage range for both devices extends from 4.5V to 18V (45V tolerant), making the devices ...
MAX1937/MAX1938/MAX1939 Two-Phase Desktop CPU Core Supply Controllers with Controlled VID Change General Description
... active load-current voltage positioning. Quick-PWM control provides instantaneous load-step response, while programmable voltage positioning allows the converter to utilize full transient regulation limits, reducing the output capacitance requirement. The two phases operate 180° out-of-phase with an ...
... active load-current voltage positioning. Quick-PWM control provides instantaneous load-step response, while programmable voltage positioning allows the converter to utilize full transient regulation limits, reducing the output capacitance requirement. The two phases operate 180° out-of-phase with an ...
Higher Physics: Monitoring and measuring alternating current
... The energy required to drive the electron current around this circuit is provided by a chemical reaction in the battery. The electrical energy that is supplied by the source is transformed into other forms of energy in the components that make up the circuit. Voltage is defined as the energy transfe ...
... The energy required to drive the electron current around this circuit is provided by a chemical reaction in the battery. The electrical energy that is supplied by the source is transformed into other forms of energy in the components that make up the circuit. Voltage is defined as the energy transfe ...
Dual-Channel Pulse-Width-Modulation (PWM
... driver. The voltage reference, oscillator, undervoltage lockout, and short-circuit protection are common to both channels. Channel 1 is configured to drive n-channel MOSFETs in step-up or flyback converters, and channel 2 is configured to drive p-channel MOSFETs in step-down or inverting converters. ...
... driver. The voltage reference, oscillator, undervoltage lockout, and short-circuit protection are common to both channels. Channel 1 is configured to drive n-channel MOSFETs in step-up or flyback converters, and channel 2 is configured to drive p-channel MOSFETs in step-down or inverting converters. ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.