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Kirchhoff`s Laws
Kirchhoff`s Laws

... In previous lab experiments, the total resistance of a combination of resistors was calculated using the formulas for series and parallel combinations of resistors. Relationships between the current and the voltage drop across each resistor was also tested. In these circuits, a single battery was pr ...
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... is −12.6 MHz/K. We propose that this low temperature sensitivity is a result of the lower temperature dependency of the transistors at the halved oscillation frequency compared to a fundamental frequency oscillator. The measured performance was achieved by a single technological run without any rede ...
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Here - Spellman High Voltage

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... which destroys the imaging performance especially under low illumination [3]. A large dark current in the photodiode array of a CMOS imager limits the sensor’s dynamic range considerably by reducing the signal swing. The expected dynamic range value for CMOS image sensors is about 54dB which assesse ...
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... 17. A single-phase transformer has no-load loss of 64 W, as obtained from an opencircuit test. When a short-circuit test is performed on it with 90% of the rated currents flowing in its both LV and HV windings, he measured loss is 81 W. The transformer has maximum efficiency when operated at (A) 50. ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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