
Kirchhoff`s Laws
... In previous lab experiments, the total resistance of a combination of resistors was calculated using the formulas for series and parallel combinations of resistors. Relationships between the current and the voltage drop across each resistor was also tested. In these circuits, a single battery was pr ...
... In previous lab experiments, the total resistance of a combination of resistors was calculated using the formulas for series and parallel combinations of resistors. Relationships between the current and the voltage drop across each resistor was also tested. In these circuits, a single battery was pr ...
GAAS: A Fully Integrated SiGe Low Phase Noise Push
... is −12.6 MHz/K. We propose that this low temperature sensitivity is a result of the lower temperature dependency of the transistors at the halved oscillation frequency compared to a fundamental frequency oscillator. The measured performance was achieved by a single technological run without any rede ...
... is −12.6 MHz/K. We propose that this low temperature sensitivity is a result of the lower temperature dependency of the transistors at the halved oscillation frequency compared to a fundamental frequency oscillator. The measured performance was achieved by a single technological run without any rede ...
HMC549MS8G / 549MS8GE
... pre-amplifiers for CATV Set Top Box, Home Gateway, and Digital Television receivers operating between 40 and 960 MHz. This high dynamic range LNA has been optimized to provide 3.5 dB noise figure and +27 dBm output IP3 from a single supply of +5.0V @ 120 mA. The outputs of this LNA are extremely wel ...
... pre-amplifiers for CATV Set Top Box, Home Gateway, and Digital Television receivers operating between 40 and 960 MHz. This high dynamic range LNA has been optimized to provide 3.5 dB noise figure and +27 dBm output IP3 from a single supply of +5.0V @ 120 mA. The outputs of this LNA are extremely wel ...
OPA692 数据资料 dataSheet 下载
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
differential integrator pixel architecture for dark current
... which destroys the imaging performance especially under low illumination [3]. A large dark current in the photodiode array of a CMOS imager limits the sensor’s dynamic range considerably by reducing the signal swing. The expected dynamic range value for CMOS image sensors is about 54dB which assesse ...
... which destroys the imaging performance especially under low illumination [3]. A large dark current in the photodiode array of a CMOS imager limits the sensor’s dynamic range considerably by reducing the signal swing. The expected dynamic range value for CMOS image sensors is about 54dB which assesse ...
GATE EEE 2013 Papers
... 17. A single-phase transformer has no-load loss of 64 W, as obtained from an opencircuit test. When a short-circuit test is performed on it with 90% of the rated currents flowing in its both LV and HV windings, he measured loss is 81 W. The transformer has maximum efficiency when operated at (A) 50. ...
... 17. A single-phase transformer has no-load loss of 64 W, as obtained from an opencircuit test. When a short-circuit test is performed on it with 90% of the rated currents flowing in its both LV and HV windings, he measured loss is 81 W. The transformer has maximum efficiency when operated at (A) 50. ...
Analog Devices Welcomes Hittite Microwave Corporation
... Wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5V supply. The P1dB output power of up to +18 dB ...
... Wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5V supply. The P1dB output power of up to +18 dB ...
FPF2140/42/43/44/46/47 Full Function Load Switch with Reverse Current Blocking Features
... The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long as there is no undervoltage on VIN or a junction temperature in excess of 140°C. ON is active HI and has a low threshold making it capable of interfacing with low voltage signals. In addi ...
... The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long as there is no undervoltage on VIN or a junction temperature in excess of 140°C. ON is active HI and has a low threshold making it capable of interfacing with low voltage signals. In addi ...
74VCX162373 Low Voltage 16-Bit Transparent Latch with 3.6V Tolerant Inputs and Outputs
... appear to be transparent to the data when the Latch enable (LE) is HIGH. When LE is LOW, the data that meets the setup time is latched. Data appears on the bus when the Output Enable (OE) is LOW. When OE is HIGH, the outputs are in a high impedance state. The VCX162373 is also designed with 26: resi ...
... appear to be transparent to the data when the Latch enable (LE) is HIGH. When LE is LOW, the data that meets the setup time is latched. Data appears on the bus when the Output Enable (OE) is LOW. When OE is HIGH, the outputs are in a high impedance state. The VCX162373 is also designed with 26: resi ...
LM5007 - Texas Instruments
... The feedback comparator in hysteretic regulators depend upon the output ripple voltage to switch the output transistor on and off at regular intervals. In order for the internal comparator to respond quickly to changes in output voltage, proportional to inductor current, a minimum amount of capacito ...
... The feedback comparator in hysteretic regulators depend upon the output ripple voltage to switch the output transistor on and off at regular intervals. In order for the internal comparator to respond quickly to changes in output voltage, proportional to inductor current, a minimum amount of capacito ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.