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... The AD536A is laser trimmed at the wafer level for input and output offset, positive and negative waveform symmetry (dc reversal error), and full-scale accuracy at 7 V rms. As a result, no external trims are required to achieve the rated unit accuracy. There is full protection for both inputs and ou ...
... The AD536A is laser trimmed at the wafer level for input and output offset, positive and negative waveform symmetry (dc reversal error), and full-scale accuracy at 7 V rms. As a result, no external trims are required to achieve the rated unit accuracy. There is full protection for both inputs and ou ...
INFINEON BTS441R datasheet
... 11) not subject to production test, specified by design 12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drai ...
... 11) not subject to production test, specified by design 12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drai ...
74VCX245 Low Voltage Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs 7
... The VCX245 contains eight non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus oriented applications. The T/R input determines the direction of data flow. The OE input disables both the A and B ports by placing them in a high impedance state. ...
... The VCX245 contains eight non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus oriented applications. The T/R input determines the direction of data flow. The OE input disables both the A and B ports by placing them in a high impedance state. ...
DS1250Y/AB 4096k Nonvolatile SRAM FEATURES PIN ASSIGNMENT
... 6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high-impedance state during this period. 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in high-impedance ...
... 6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high-impedance state during this period. 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in high-impedance ...
Document
... extensive in automotive applications, but also in cases where a DC voltage produced by rectification is used to supply secondary loads. The conversion is often associated with stabilizing, i.e. the input voltage is variable but the desired output voltage stays the same. The converse is also required ...
... extensive in automotive applications, but also in cases where a DC voltage produced by rectification is used to supply secondary loads. The conversion is often associated with stabilizing, i.e. the input voltage is variable but the desired output voltage stays the same. The converse is also required ...
Analog Electronics
... The basic integrator is easily identified by the capacitor in the feedback loop. A constant input voltage yields a ramp output. The input resistor and the capacitor form an RC circuit. ...
... The basic integrator is easily identified by the capacitor in the feedback loop. A constant input voltage yields a ramp output. The input resistor and the capacitor form an RC circuit. ...
LTC6957-1/LTC6957-2/LTC6957-3/LTC6957-4
... The LTC6957 will buffer and distribute any logic signal with minimal additive noise, however, the part really excels at translating sine wave signals to logic levels. The early amplifier stages have selectable lowpass filtering to minimize the noise while still amplifying the signal to increase its ...
... The LTC6957 will buffer and distribute any logic signal with minimal additive noise, however, the part really excels at translating sine wave signals to logic levels. The early amplifier stages have selectable lowpass filtering to minimize the noise while still amplifying the signal to increase its ...
Document
... voltage measured would be much larger than the actual voltage across the unknown resistor. ...
... voltage measured would be much larger than the actual voltage across the unknown resistor. ...
Series and Parallel Circuits
... • Now that we have our circuit resistance of RT we can calculate circuit current by using Ohm’s Law. If RT = 73Ω and E = 100V I= ...
... • Now that we have our circuit resistance of RT we can calculate circuit current by using Ohm’s Law. If RT = 73Ω and E = 100V I= ...
OPA130 OPA2130 OPA4130 Low Power, Precision
... Exposure to absolute maximum conditions for extended periods may degrade device reliability. (2) Short-circuit to ground, one amplifier per package. ...
... Exposure to absolute maximum conditions for extended periods may degrade device reliability. (2) Short-circuit to ground, one amplifier per package. ...
Very High Accuracy Instrumentation Amplifier
... NOTES: (1) Typically the tolerance of RG will be the major source of gain error. (2) Nonlinearity is the maximum peak deviation from the best straight-line as a percentage of peak-to-peak full scale output. (3) Not including the TCR of RG. (4) Adjustable to zero at any one gain. (5) θJC output stage ...
... NOTES: (1) Typically the tolerance of RG will be the major source of gain error. (2) Nonlinearity is the maximum peak deviation from the best straight-line as a percentage of peak-to-peak full scale output. (3) Not including the TCR of RG. (4) Adjustable to zero at any one gain. (5) θJC output stage ...
Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series
... HSMS-282x family use the same diode chip – they differ only in package configuration. The same is true of the HSMS-280x, -281x, 285x, -286x and -270x families. Each family has a different set of characteristics, which can be compared most easily by consulting the SPICE parameters given on each data ...
... HSMS-282x family use the same diode chip – they differ only in package configuration. The same is true of the HSMS-280x, -281x, 285x, -286x and -270x families. Each family has a different set of characteristics, which can be compared most easily by consulting the SPICE parameters given on each data ...
UCC2813-0-Q1 数据资料 dataSheet 下载
... An electrolytic capacitor may also be used in addition to the ceramic capacitor. voltage reference (REF) REF is the voltage reference for the error amplifier and also for many other functions on the IC. REF is also used as the logic power supply for high-speed switching logic on the IC. When VCC is ...
... An electrolytic capacitor may also be used in addition to the ceramic capacitor. voltage reference (REF) REF is the voltage reference for the error amplifier and also for many other functions on the IC. REF is also used as the logic power supply for high-speed switching logic on the IC. When VCC is ...
BQ24640 数据资料 dataSheet 下载
... The junction-to-case(top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environ ...
... The junction-to-case(top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environ ...
[supplementary material]
... Figure S8. Output driver timer and output driver selection logic. The output driver timer is based on a one-shot topology, where a current charges a capacitor to a threshold. This times the first pulse. Once the threshold is reached, a current charges a second capacitor to the same threshold. Once b ...
... Figure S8. Output driver timer and output driver selection logic. The output driver timer is based on a one-shot topology, where a current charges a capacitor to a threshold. This times the first pulse. Once the threshold is reached, a current charges a second capacitor to the same threshold. Once b ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.