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12-Bit, 80 MSPS CommsADC? Analog-to-Digital
12-Bit, 80 MSPS CommsADC? Analog-to-Digital

Proposed SSR Technology Questions Answers to Proposed Questions
Proposed SSR Technology Questions Answers to Proposed Questions

Part 2 of 6
Part 2 of 6

MAX16824/MAX16825 High-Voltage, Three-Channel Linear High-Brightness LED Drivers General Description
MAX16824/MAX16825 High-Voltage, Three-Channel Linear High-Brightness LED Drivers General Description

... The MAX16824/MAX16825 three-channel LED drivers operate over a 6.5V to 28V input voltage range. These devices provide three open-drain constant-current-sinking outputs that are rated to 36V and deliver up to 150mA of current to each string of high-brightness LEDs (HB LEDs). The current at each outpu ...
PCM1702 数据资料 dataSheet 下载
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... all the advantages of a conventional DAC (excellent full scale performance, high signal-to-noise ratio and ease of use) with superior low-level performance. Two DACs are combined in a complementary arrangement to produce an extremely linear output. The two DACs share a common reference, and a common ...
Re-engineering the Big Muff PI - The Science of Electric Guitars and
Re-engineering the Big Muff PI - The Science of Electric Guitars and

... biased if the voltage at the anode (A) is more than Vd above the cathode (K). Typically Vd ≈ 0.65 volts is the same as the VBE intrinsic base-emitter voltage in transistors. When a diode is forward-biased, its resistance rd is very low (it can be considered a short-circuit which passes all current t ...
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... of producing accurate time delays, or oscillation. In the time delay mode of operation, the time is precisely controlled by one external resistor and capacitor. For a stable operation as an oscillator, the free running frequency and the duty cycle are both accurately controlled with two external res ...
Kirchhoff`s Laws
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... currents flowing in branches of the circuit. For example, in Fig. 2.1 the currents flowing in the four branches connected to the node have been defined as I1, I2, I3, I4 and Kirchhoff’s Current Law allows us to write down an equation relating these currents. Looking closely at Fig. 2.1, we see that ...
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... B = 0 , as the susceptance (inductive) BL = (1 / ω L) is equal to the susceptance (capacitive) BC = ω C . The phase angle is φ = 0° , and the power factor is unity ( cos φ = 1 ). The total (supply) current is phase with the input voltage. So, the magnitude of the total current ( (V / R) ) in the ci ...
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Single Port, High Output Current VDSL2 Line Driver with Power Control OPA2670 FEATURES

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W6NL Mods for the TS-930

... the 28.5V supply switched through the power switch. The zener diode D10 and the first transistor Q6 are on the power supply board, and the second transistor Q3 is the TO220 transistor on the heat sink. The schematic incorrectly shows C13 to be 25 uF 100V (it is 100 uF 25V). ...
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Circuit Theory - GTU e

Chapter 3 - Lab 2: Filters and Operational Amplifiers
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... and maximum output voltage of 10V. Having determined RC and R, C is therefore defined. However, this is not as trivial as it may sound because there is generally a range of possible values for R, which leaves some room for optimization. Also, at lower frequencies, (say <100 Hz), the product RC may b ...
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... ► Idea: the load also should be provided with active control  if the nMOS driver (switching) trasistor conducts the load transistor must be an "open" circuit  if the nMOS driver (switching) trasistor is an "open circuit", the load must be conducting ► This ...
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... If a constant input is to be applied to an IC from outside, it is generally a good idea to include a resistance between the ground or supply and the input for the following reasons: o prevents a large current at the input for some technologies at power-up that can cause damage or disable the IC. o a ...
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Uttar Pradesh Power Corporation Limited Subject
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PPS 6 - Devchand College

... shown in fig(a). The variation is provided by a wiper connected to a control shaft. When a control shaft is moved, the wiper moves over a resistive element. This movement provides a continuous variation in resistance between the middle terminal & either outside terminal. Fig(b) shows an arrangement ...
Basic Electronics for the New Ham (Outline)
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... • There is greatest potential for meter damage when measuring current than any other function. • Just as in voltage, there is two kinds of current associated with the voltage, AC and DC • This meter will only measure DC, more expensive meters will measure both currents • To measure current, the VOM ...
BU24031GW
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... damaged. Do not apply voltages or temperatures that exceed the absolute maximum ratings. If you expect that any voltage or temperature could be exceeding the absolute maximum ratings, take physical safety measures such as fuses to prevent any conditions exceeding the absolute maximum ratings from be ...
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... V cm ¼ Fig. 3(a) shows the improved circuit structure which is based on the H5 topology. The high-frequency IGBT switches from each phase leg are replaced by MOSFET switches. In order to eliminate the CM leakage current, two extra capacitors are connected across the switches S2 and S4. LA, LB, and C ...
chapter03
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... Figure 3.4 (a) A follower, o = i . (b) A noninverting amplifier, i appears across Ri , producing a current through Ri that also flows through Rf. (c) A lever with arm lengths proportional to resistance values makes possible an easy visualization of input-output characteristic. (d) The input-outpu ...
TLE 6711 G/GL Multifunctional Voltage Regulator and Watchdog Automotive Power
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... normal operation and low during the warning. The OVL goes LOW if the PWM comparator output (see Figure 8) remains HIGH for clock time period. This occurs when the Error-Signal falls below the minimum value of the Error-Ramp, this mean that Boost voltage falls below a certain threshold voltage. The O ...
Few External Components Reliable and Flexible SMPS Controller
Few External Components Reliable and Flexible SMPS Controller

... this pin due to size limitations and technology constraints. Protection is limited by the drain--substrate junction in avalanche breakdown. To help increase the application safety against high voltage spike on that pin it is possible to insert a small wattage 1.0 kΩ series resistor between the Vin r ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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