
AAT4601 数据资料DataSheet下载
... Application Specific Power MOSFET™ (ASPM™) product family. It is a 1.8A current limited P-channel MOSFET power switch designed for high-side load switching applications. This switch operates with inputs ranging from 2.7V to 5.5V, making it ideal for both 3V and 5V systems. An integrated current-limi ...
... Application Specific Power MOSFET™ (ASPM™) product family. It is a 1.8A current limited P-channel MOSFET power switch designed for high-side load switching applications. This switch operates with inputs ranging from 2.7V to 5.5V, making it ideal for both 3V and 5V systems. An integrated current-limi ...
ADXRS610 数据手册DataSheet 下载
... CONTINUOUS SELF-TEST The on-chip integration of the ADXRS610 gives it higher reliability than is obtainable with any other high volume manufacturing method. In addition, it is manufactured under a mature BiMOS process with field-proven reliability. As an additional failure detection measure, a power ...
... CONTINUOUS SELF-TEST The on-chip integration of the ADXRS610 gives it higher reliability than is obtainable with any other high volume manufacturing method. In addition, it is manufactured under a mature BiMOS process with field-proven reliability. As an additional failure detection measure, a power ...
experiment no 4
... The output of the operation is on the form of the magnitude and sign bit. The seven least significant bits represent the magnitude of the operation, and the eighth significant bit (MSB) represent the sign bit or carry. If a carry out(1) is generated out of the MSB, the number is positive and in tru ...
... The output of the operation is on the form of the magnitude and sign bit. The seven least significant bits represent the magnitude of the operation, and the eighth significant bit (MSB) represent the sign bit or carry. If a carry out(1) is generated out of the MSB, the number is positive and in tru ...
Physics 12 to 15 - Dominican
... OP50 Set up a simple electric circuit, use appropriate instruments to measure current, potential difference (voltage) and resistance, and establish the relationship between them OP51 Demonstrate simple series and parallel circuits containing a switch and two bulbs OP52 Perform simple calculations ba ...
... OP50 Set up a simple electric circuit, use appropriate instruments to measure current, potential difference (voltage) and resistance, and establish the relationship between them OP51 Demonstrate simple series and parallel circuits containing a switch and two bulbs OP52 Perform simple calculations ba ...
Synchronous-Buck Power Stage (Rev. A)
... sensing circuitry and necessary protection functions are all integrated into one monolithic solution to facilitate minimum size and maximum efficiency. Driver circuits provide high charge and discharge current for the high-side NMOS switch and the lowside NMOS synchronous rectifier in a synchronous ...
... sensing circuitry and necessary protection functions are all integrated into one monolithic solution to facilitate minimum size and maximum efficiency. Driver circuits provide high charge and discharge current for the high-side NMOS switch and the lowside NMOS synchronous rectifier in a synchronous ...
HMC866LC3C - seek datasheet
... provides 29 dB of differential gain. The output voltage swing is adjustable up to 800 mVp-p differential by using the VAC analog control input and the additive RMS jitter is less than 300 fs for 32 Gbps operation. The amplifier allows external offset correction function to both inputs and outputs. A ...
... provides 29 dB of differential gain. The output voltage swing is adjustable up to 800 mVp-p differential by using the VAC analog control input and the additive RMS jitter is less than 300 fs for 32 Gbps operation. The amplifier allows external offset correction function to both inputs and outputs. A ...
NB4N507A 3.3V/5V, 50 MHz to 200 MHz PECL Clock Synthesizer
... NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functiona ...
... NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functiona ...
meg ohmmeter
... A routine test that bas been fairly widely adopted in the insulation -testing field consists of measuring the apparent leakage resistance after a testing voltage of 500 volts bas been applied for one minute and ag--...!n for ten minutes. The ratio of the indicated resistances, sometimes referred to ...
... A routine test that bas been fairly widely adopted in the insulation -testing field consists of measuring the apparent leakage resistance after a testing voltage of 500 volts bas been applied for one minute and ag--...!n for ten minutes. The ratio of the indicated resistances, sometimes referred to ...
Report - inst.eecs.berkeley.edu
... order to reduce the drive fight and ensure that a “0” can be successfully written. This technique requires that any cells connected to a given VVDD be written at the same time, since a lower VVDD drastically reduces hold margins. This causes a significant area overhead, since sense-amps and other co ...
... order to reduce the drive fight and ensure that a “0” can be successfully written. This technique requires that any cells connected to a given VVDD be written at the same time, since a lower VVDD drastically reduces hold margins. This causes a significant area overhead, since sense-amps and other co ...
ELM901FxA 1A 2x Charge Pump LED Driver ELM901FxA-S
... constant current. When the battery voltage is much higher than LED forward voltage, LED is lit by connecting directly to the battery; output voltage is stepped up to 5.5V by internal charge pump circuit to light LED when voltage drops. LED current is driven by the constant current circuit which is s ...
... constant current. When the battery voltage is much higher than LED forward voltage, LED is lit by connecting directly to the battery; output voltage is stepped up to 5.5V by internal charge pump circuit to light LED when voltage drops. LED current is driven by the constant current circuit which is s ...
A circuit is a complete path by which electricity can flow
... part that is heated and severed by the passage of over-current through it. Kit-Kat fuse or Porcelain re-wireable fuse A fuse interrupts excessive current (blows) so that further damage by overheating or fire is prevented. Overcurrent protection devices are essential in electrical systems to limit th ...
... part that is heated and severed by the passage of over-current through it. Kit-Kat fuse or Porcelain re-wireable fuse A fuse interrupts excessive current (blows) so that further damage by overheating or fire is prevented. Overcurrent protection devices are essential in electrical systems to limit th ...
HMC498LC4 数据资料DataSheet下载
... The HMC498LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” SMT package. Operating from 17 to 24 GHz, the amplifier provides 22 dB of gain, +26 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 4 dB while output IP3 is +36 d ...
... The HMC498LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” SMT package. Operating from 17 to 24 GHz, the amplifier provides 22 dB of gain, +26 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 4 dB while output IP3 is +36 d ...
TPS60400-Q1 数据资料 dataSheet 下载
... ranging from 1.6 V to 5.5 V. The devices are typically supplied by a preregulated supply rail of 5 V or 3.3 V. Due to its wide input voltage range, two or three NiCd, NiMH, or alkaline battery cells, as well as one Li-Ion cell can also power them. Only three external 1-µF capacitors are required to ...
... ranging from 1.6 V to 5.5 V. The devices are typically supplied by a preregulated supply rail of 5 V or 3.3 V. Due to its wide input voltage range, two or three NiCd, NiMH, or alkaline battery cells, as well as one Li-Ion cell can also power them. Only three external 1-µF capacitors are required to ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.