
Biela J. Aigner H., Parallel/Series Connection of Self
... converters from the DC voltage source VDC is the same. Neglecting the magnetising current and/or magnetising inductance of the two transformers in a first step, the two resonant tank currents IS1 and IS2 must be the same since the secondaries of the two transformers are connected in series so that s ...
... converters from the DC voltage source VDC is the same. Neglecting the magnetising current and/or magnetising inductance of the two transformers in a first step, the two resonant tank currents IS1 and IS2 must be the same since the secondaries of the two transformers are connected in series so that s ...
STUSBCD01B
... The STUSBCD01B can detect a dedicated charger or a Host/Hub charger connected to USB data lines and provides both an open drain pin and a digital I/O pin for the detection output signal. The open drain output can be disabled using the /OE input signal. Two different detection methods, selectable thr ...
... The STUSBCD01B can detect a dedicated charger or a Host/Hub charger connected to USB data lines and provides both an open drain pin and a digital I/O pin for the detection output signal. The open drain output can be disabled using the /OE input signal. Two different detection methods, selectable thr ...
Circuits - Lake Area Radio Klub
... impedance of the transmission line into which it is inserted. (G7C06) The effect of lead inductance in a capacitor used at VHF frequencies and above is that effective capacitance may be reduced because of the lead inductance. (G6A05) A reason not to use wire-wound resistors in an RF circuit is t ...
... impedance of the transmission line into which it is inserted. (G7C06) The effect of lead inductance in a capacitor used at VHF frequencies and above is that effective capacitance may be reduced because of the lead inductance. (G6A05) A reason not to use wire-wound resistors in an RF circuit is t ...
IGBT Tutorial
... voltage across an IGBT is always at least one diode drop. However, compared to a power MOSFET of the same die size and operating at the same temperature and current, an IGBT can have significantly lower on state voltage. The reason for this is that a MOSFET is a majority carrier device only. In othe ...
... voltage across an IGBT is always at least one diode drop. However, compared to a power MOSFET of the same die size and operating at the same temperature and current, an IGBT can have significantly lower on state voltage. The reason for this is that a MOSFET is a majority carrier device only. In othe ...
4.5-V-18-V Input, High Current, Synchronous Step Down 3-DC
... All converters have peak current mode control which simplifies external frequency compensation. The device has a built-in slope compensation ramp. The slope compensation can prevent sub harmonic oscillations in peak current mode control. A traditional type II compensation network can stabilize the s ...
... All converters have peak current mode control which simplifies external frequency compensation. The device has a built-in slope compensation ramp. The slope compensation can prevent sub harmonic oscillations in peak current mode control. A traditional type II compensation network can stabilize the s ...
IDT8P34S1102I Final Data Sheet.fm
... reduced. Even though the differential input can handle full rail LVCMOS signaling, it is recommended that the amplitude be reduced. The datasheet specifies a lower differential amplitude, however this only applies to differential signals. For single-ended applications, the swing can be larger, howev ...
... reduced. Even though the differential input can handle full rail LVCMOS signaling, it is recommended that the amplitude be reduced. The datasheet specifies a lower differential amplitude, however this only applies to differential signals. For single-ended applications, the swing can be larger, howev ...
Circuit Practical Activity
... Of course, in order to fully understand any circuit, you need to take into account both voltage and current. The goals of this lab are to complete our understanding of how voltage, current, and resistance relate to each other in circuits, and to learn how to use an ammeter to measure current directl ...
... Of course, in order to fully understand any circuit, you need to take into account both voltage and current. The goals of this lab are to complete our understanding of how voltage, current, and resistance relate to each other in circuits, and to learn how to use an ammeter to measure current directl ...
Print Notes on Electric Circuits
... A gap is usually provided by an electric switch that can be opened or closed to either cut off or allow electron flow. The water analogy is useful but has some ___________________. • A break in a water pipe results in a leak, but a break in an electric circuit results in a complete stop in the flow. ...
... A gap is usually provided by an electric switch that can be opened or closed to either cut off or allow electron flow. The water analogy is useful but has some ___________________. • A break in a water pipe results in a leak, but a break in an electric circuit results in a complete stop in the flow. ...
$doc.title
... ☞ fabrication of 0.5-5 F capacitors of small size (1-2 cm high) and low cost (< $5) ...
... ☞ fabrication of 0.5-5 F capacitors of small size (1-2 cm high) and low cost (< $5) ...
Ch 23 Series and Parallel Circuits
... 9. Redraw the circuit diagram according to the following directions. a. Insert a voltmeter that would measure the potential difference across the 10- resistor. ...
... 9. Redraw the circuit diagram according to the following directions. a. Insert a voltmeter that would measure the potential difference across the 10- resistor. ...
Switching Regulator Fundamentals (Rev. A)
... The dot-negative voltage appearing across the secondary winding turns off the diode, preventing current flow in the secondary winding during the switch on time. During this time, the load current must be supplied by the output capacitor alone. When the switch turns off, the decreasing current flow i ...
... The dot-negative voltage appearing across the secondary winding turns off the diode, preventing current flow in the secondary winding during the switch on time. During this time, the load current must be supplied by the output capacitor alone. When the switch turns off, the decreasing current flow i ...
UTC MC34118 LINEAR INTEGRATED CIRCUIT
... A supply voltage of +2.8V to +6.5V is required at 5mA. As Vcc falls from 3.5V to 2.8V, an AGC circuit reduces the receive attenuator gain by 25dB( when in the receive mode). Output of the second hybrid amplifier. The gain is internally set at -1 to provide a differential output, in conjunction with ...
... A supply voltage of +2.8V to +6.5V is required at 5mA. As Vcc falls from 3.5V to 2.8V, an AGC circuit reduces the receive attenuator gain by 25dB( when in the receive mode). Output of the second hybrid amplifier. The gain is internally set at -1 to provide a differential output, in conjunction with ...
AD823 Dual 16 MHz, Rail-to-Rail FET Input Amplifier Data Sheet
... 600 MHz to 800 MHz region. In addition, the process also features N-Channel JFETs, which are used in the input stage of the AD823. These process features allow the construction of high frequency, low distortion op amps with pico-ampere input currents. This design uses a differential output input sta ...
... 600 MHz to 800 MHz region. In addition, the process also features N-Channel JFETs, which are used in the input stage of the AD823. These process features allow the construction of high frequency, low distortion op amps with pico-ampere input currents. This design uses a differential output input sta ...
50-MHz Low-Distortion High-CMRR Rail-to-Rail I/O, Single-Supply Operational Amplifier OPA365-Q1 OPA2365-Q1 FEATURES
... The OPA365 amplifier parameters are fully specified from +2.2V to +5.5V. Many of the specifications apply from −40°C to +125°C. Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in Typical Characteristics. ...
... The OPA365 amplifier parameters are fully specified from +2.2V to +5.5V. Many of the specifications apply from −40°C to +125°C. Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in Typical Characteristics. ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.