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LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Document # Page 1 of 32 Date Effective 6/21/2017 1:09 AM LAT-TD-04516-02 Author(s) Supersedes David Nelson GLAST LAT ELECTRONICS TECHNICAL DOCUMENT Subsystem/Office Document Title Parts Stress/Electrical Worst Case Analysis, TPS Power Supply Gamma Ray Large Area Space Telescope (GLAST) Large Area Telescope (LAT) Parts Stress/Electrical Worst Case Analysis TPS Power Supply Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # GF-00006-A LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis CHANGE HISTORY LOG Revision Effective Date 02 8/18/04 Page 2 of 32 Description of Changes Corrected 0705 100-549 Ohm voltage from 12V to 1.2V Corrected 0705 Jumper for current rating Added derating standard in Table 7. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 3 of 32 DOCUMENT APPROVAL Prepared by: David Nelson Date 11/19/2003 Date Approved by: Date Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 4 of 32 Table of Contents 1. INTRODUCTION ...............................................................................................................................................5 Issues Identified and Resolved During Analysis .......................................................................................................5 2. PURPOSE ............................................................................................................................................................5 3. SCOPE ..................................................................................................................................................................5 Capacitor Stress Analysis. .........................................................................................................................................5 Connector Stress Analysis. ........................................................................................................................................6 Resistor Stress Analysis. ............................................................................................................................................6 Diodes. .......................................................................................................................................................................6 Transistors. ................................................................................................................................................................6 Microcircuits. .............................................................................................................................................................6 Thermistors. ...............................................................................................................................................................7 4. DEFINITIONS AND ACRONYMS ...................................................................................................................7 Definitions .................................................................................................................................................................7 Acronyms ..................................................................................................................................................................8 5. REFERENCES ....................................................................................................................................................9 6. PARTS STRESS ANALYSIS WORKSHEETS ................................................................................................9 List of Tables TABLE 1 APPLICABLE DOCUMENTS ....................................................................................................................................... 9 TABLE 2 - PARTS STRESS WORKSHEET, CAPACITOR, CERAMIC & TANTALUM.................................................................... 10 TABLE 3 - PARTS STRESS WORKSHEET, DIODE, SCHOTTKY ................................................................................................ 13 TABLE 4 - PARTS STRESS WORKSHEET, DIODE, ZENER ....................................................................................................... 13 TABLE 5 - PARTS STRESS WORKSHEET, DIODE, SWITCHING ............................................................................................... 15 TABLE 6 - PARTS STRESS WORKSHEET, POLY-SWITCH ....................................................................................................... 16 TABLE 7 - PARTS STRESS WORKSHEET, EMI FILTER, ARF461 ........................................................................................... 16 TABLE 8 - PARTS STRESS WORKSHEET, CMOS LOGIC ...................................................................................................... 17 TABLE 9 - PARTS STRESS WORKSHEET, BIPOLAR OP AMP, LINEAR .................................................................................. 19 TABLE 10 - PARTS STRESS WORKSHEET, DC-DC CONVERTER, MAX724 .......................................................................... 19 TABLE 11 - PARTS STRESS WORKSHEET, INDUCTOR ........................................................................................................... 20 TABLE 12 - PARTS STRESS WORKSHEET, P-CHANNEL MOSFET, IRHNJ597034 ............................................................... 21 TABLE 13 - PARTS STRESS WORKSHEET, TRANSISTOR, BIPOLAR ........................................................................................ 22 TABLE 14 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, 3 WATT .................................................................................. 24 TABLE 15 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, FILM , 2512 ............................................................................ 24 TABLE 16 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, FILM, (1206)........................................................................... 27 TABLE 17 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, JUMPER 0705 .......................................................................... 28 TABLE 18 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, FILM, (0705)........................................................................... 28 TABLE 19 - PARTS STRESS WORKSHEET, THERMISTOR ....................................................................................................... 31 TABLE 20 - PARTS STRESS WORKSHEET, CONNECTOR ........................................................................................................ 32 TABLE 21 - PARTS STRESS WORKSHEET, WIRE 24AWG PTFE 600VOLT ........................................................................... 32 Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 5 of 32 1. INTRODUCTION The TPS Power Supply Board (PSB) electrical stress analysis was performed in accordance with the methodology agreed to between GSFC and LAT as detailed in Section 3, SCOPE. Each grouping of parts was analyzed under realizable worst case conditions of maximum voltage, maximum current, maximum operational temperature, and radiation effects. The applied electrical stresses were compared to the manufacturer's specified stresses and to EEE-INST-0002 electrical stress derating criteria. Details of the Power Supply Board analysis are provided in Section 6, Parts Stress Analysis Worksheets. The electrical stress analysis results indicate that the Board part applications meet the derating requirements of EEE-INST-0002. The 70 °C maximum part temperature used in this analysis was calculated as the sum of the 60 °C cold plate temperature plus a 10 °C rise to the part. Semiconductor junction temperatures were calculated as 70 °C case temperature plus the junction-to-case thermal resistance (jc) times the power being dissipated by the part. Issues Identified and Resolved During Analysis The issues identified and resolved during the analysis are as follows: None identified. 2. PURPOSE The purpose of this analysis was to verify adequate part electrical derating margins, in accordance with EEE-INST-0002 and stress analysis as per MAR. 3. SCOPE An electrical stress analysis is normally performed and documented for each individual part and listed by reference designator, part number, and nomenclature in the worksheets. The method proposed by the LAT EEE parts engineers and GSFC reliability engineer and approved by the GSFC SAM is based on, where possible, to group devices as described below, and apply a maximum stress to the weakest part. If this worst case scenario passed the derating criteria then the whole group would pass. Additional details for this approach as used for each of the part types is provided in the following paragraphs. Capacitor Stress Analysis. Capacitors of the same type were grouped together and the highest applied DC bus voltage plus a 5% tolerance (for example 3.3V was assumed to be 3.465V) was applied to the lowest voltage rated capacitor. If that scenario resulted in a pass condition then all higher voltage rated capacitors connected to the 3.3V bus will also pass. A similar analysis was applied for the temperature derating. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 6 of 32 Connector Stress Analysis. Connectors were grouped together and the highest applied DC bus voltage plus a 5% tolerance (for example 28V was assumed to be 29.4V) was applied to the connector pins. If that scenario results in a pass condition then all connectors will pass. A similar analysis was applied for the temperature derating. Resistor Stress Analysis. Resistors of the same type and power dissipation rating were grouped together and the highest applied DC bus voltage plus a 5% tolerance (for example 3.3V was assumed to be 3.465V) was applied to all the resistors. The lowest resistance value that would pass the derating criteria with 100% of the bus voltage applied was calculated as follows: Minimum resistance within the derating criteria = Max Bus Voltage squared / Derated Resistor Power Rating All resistors of this value or higher will pass the derating criteria. Those resistors that did not pass this gross analysis screening were subjected to individual analysis using the actual applied voltage. Diodes. Diodes were grouped together by type and circuit application. The highest applied forward current was then calculated. If that scenario resulted in a pass condition then all diodes in a similar application will also pass. A similar approach was applied for the following analyses: Voltage Reference and Zener Diodes – Power and Junction Temperature Rectifier Diodes – Peak Inverse Voltage, Surge Current and Junction Temperature Transistors. Transistors were grouped together by type and circuit application. The highest applied current was then calculated and if a pass condition resulted then all transistors in a similar application will also pass the current analysis. A similar approach was applied for voltage, power and junction temperature analyses. Microcircuits. Microcircuits were grouped together and the analysis approach for the grouped microcircuits was as follows: Fanout Analysis – Typical CMOS microcircuit input leakage current is 10uA per input. The minimum derated output drive current for IC’s on the Auxiliary board is 6.4MA for the UT54ACS14UQAH Inverter devices. The UT22VP10C-20PCA PLA device, which has an output rating of 12.0mA, has the greatest number of fanouts at 24. Therefore the 80% derating criteria is met even when applying the greatest fanout load of 240uA to the lowest rated IC output of 6.4mA. Power Dissipation Analysis – All IC’s are operating within the fanout derating criteria at a switching rate much less than the derated maximum frequency limit, therefore the power dissipated will be within the derating criteria. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 7 of 32 Junction Temperature Analysis – Junction temperatures were calculated as follows: Junction temperature = Tcase + jc * Pd Where: Tcase = 70°C jc = Thermal resistance junction-to-case Pd = Power being dissipated by the device Thermistors. The highest applied current through the thermistor operating at the maximum part temperature of 70°C was determined and power dissipation was calculated as P=I2/R. 4. DEFINITIONS AND ACRONYMS The following terms, definitions, abbreviations, and acronyms are used in this document: Definitions A Analysis An Analog Acc Accuracy adj adjustable cm centimeter D, Dg Digital D Demonstration DR Data Rate Eff Efficiency F Functional Hz Hertz, unit of frequency I Inspection kHz kilohertz, 103 Hz MHz Megahertz, 106 Hz msec millisecond, 10-3 s mV millivolt, 10-3 V P Performance p-p peak-to-peak Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 8 of 32 P/F Pass/Fail s, sec seconds T Test Ti Time V Volt W Watt Acronyms AIDS Assembly and Inspection Data Sheet GLAST Gamma Ray Large Area Space Telescope LAT Large Area Telescope MAR Mission Assurance Requirements MIP Mandatory Inspection Point TEM Tower Electronics Module PAIP Performance Assurance Implementation Plan TPS Tower Power Supply Board Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 9 of 32 5. REFERENCES The analysis baseline documents used in the performance of this analysis are listed in Error! Reference source not found.. Table 1 Applicable Documents Document/Drawing Number Revision Date Document Title or Description LAT-DS-02390-53 10/01/03 Schematic, TPS Power Supply LAT-TD-2391-53 4/3/03 Bill of Materials LAT-DS-01723-01 LAT-DS-01281 LAT-DS-01652 EEE-INST-0002 Stress Analysis Circuit Card Assembly, TPS PSU Specification, TPS PSU Test Procedure, TPS PSU Requirements/Guidelines May 2003 Goddard Space Flight Center, Part Derating Criteria GLAST LAT MAR 6. PARTS STRESS ANALYSIS WORKSHEETS The part level electrical stress analysis results are provided in the worksheets contained in the following tables. The methodology and assumptions used in formulating this report are presented in Section 3, SCOPE. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 10 of 32 Table 2 - Parts Stress Worksheet, Capacitor, Ceramic & Tantalum Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F Voltage 0.6 Lowest Rated Voltage =50V, Derated voltage = 30V, Highest Applied Voltage = 29V P Voltage 0.6 Lowest Rated Voltage =100V, Derated voltage = 60V, Highest Applied Voltage = 28V C8,C10,C29,C65, C81,C155-164, C166-175, C220,C505, C509,C560, C605,C609, C660 C530,630 Voltage 0.6 Lowest Rated Voltage =100V, Derated voltage = 60V , Highest Applied Voltage = 29V C1,C5,C9, C31,C33, C35,C37, C54,C62, C66-67, C70,C73, C76,C110, C114-115, C165,C506, C596,C598, C606,C696, C698 P Voltage 0.6 Lowest Rated Voltage =100V, Derated voltage = 60V , Highest Applied Voltage = 40V P Voltage 0.5 Lowest Rated Voltage =50V, Derated voltage = 30V , Highest Applied Voltage = 2.5V C176-177, C200-204, C206-207, C507, C531-532, C562,C607, C631-633, C662 C6-7,C32, C36,C63, C74,C77 Capacitor, Ceramic (CDR, CKR, CKS, CCR) Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # GF-00006-A P P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 11 of 32 Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F Voltage 0.6 Lowest Rated Voltage =100V, Derated voltage = 60V , Highest Applied Voltage = 12V C503,C551, C603,C651 P Voltage 0.6 Lowest Rated Voltage =100V, Derated voltage = 60V , Highest Applied Voltage = 12V C102,C512, C561,C661 P Voltage 0.6 Lowest Rated Voltage =100V, Derated voltage = 60V , Highest Applied Voltage = 12V C221,C612 P Voltage 0.6 Lowest Rated Voltage =250V, Derated voltage = 150V , Highest Applied Voltage = 75V C501,C508, C510-511, C514,C540, C601,C608, C610-611, C614,C640 P Maximum Temperature 110°C Rated @ 125°C Maximum temp = 71C Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F Voltage 0.5 Lowest Rated Voltage =15V, Derated voltage = 7.5V, Highest Applied Voltage = 2V C550,C597, C650,C697 P Voltage 0.6 Lowest Rated Voltage =50V, Derated voltage = 30V, Highest Applied Voltage = 29V P Voltage 0.5 Lowest Rated Voltage =10V, Derated voltage = 5V, Highest Applied Voltage = 3.5V C2-4, C13-14, C39-40, C82, C85-86, C137-154, C502,C602 C11-12, C15-28, C30,C34, C38, C41-53, P Capacitor, Tantalum (CWR, CLR) Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P LAT-TD-02655-01 Part Type Derating Parameter PSB Parts Stress/Electrical Worst Case Analysis EEE-INST-0002 Analysis Page 12 of 32 Ref. Des P/F C55-61, C64, C68-69, C71-72, C75, C78-79, C87-100, C103-104, C108-109, C111-113, C116-136 Maximum Temperature 110°C Rated @ 125°C Maximum temp = 71C Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 13 of 32 Table 3 - Parts Stress Worksheet, Diode, Schottky Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F Rated Voltage = 40V. Derated voltage = 28V. Applied Voltage = 28V Max Tj = 150°C. Derated Tj = 110°C. Maximum junction = 81C D1-4,D8, D19-20 P Analysis Ref. Des Diode, Schottky (SSR1040G), (jc =1.0°C/W) for TO-263AB package Peak Inverse Voltage (PIV) 0.7 Maximum Junction Temperature (Tj) 0.8 P Table 4 - Parts Stress Worksheet, Diode, Zener Part Type Derating Parameter EEE-INST-0002 CR2 Diode, 3.3V Zener (JANTXV1N6485US), (jc =4.5°C/W) for D-5A package Zener Current (Iz) 0.5(Iz max + Iz nom) Power 0.5 Maximum Junction Temperature (Tj) 0.8 P IZM=433mA & Iz=76mA. Derated current = 254.5mA. Applied current = 50uA. Rated @ 1.5W at TL=30°C. Derated power = 750mW. Applied power = 3.3V*50uA=165uW. Rated at 175°C. Derated Tj = 125°C. Maximum junction temp = 75C P P CR1,CR3-4 Diode, 3.9V Zener (JANTXV1N6487US) (jc =4.5°C/W) for D-5A package Zener Current (Iz) P/F 0.5(Iz max + Iz IZM=366mA & Iz=64mA. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Page 14 of 32 Ref. Des Derated current = 215mA. Applied current = 35uA. Power 0.5 Rated @ 1.5W at TL=30°C. Derated power = 750mW. Applied power = 3.9V*35uA=136.5uW. Maximum Junction Temperature (Tj) 0.8 Rated at 175°C. Derated Tj = 125°C. Maximum junction temp = 75C Diode, 90. V Zener (JANTXV1N4488US), (jc =4.5°C/W) for D-5A package Zener Current (Iz) 0.5(Iz max + Iz IZM=14mA & Iz=2.8mA. nom) Derated current = 215mA. Applied current = 35uA. Power 0.5 Rated @ 1.5W at TL=30°C. Derated power = 750mW. Applied power = 90V*0.25uA=22uW. Maximum Junction Temperature (Tj) 0.8 Rated at 175°C. Derated Tj = 125°C. Maximum junction temp = 75C Diode, 90. V Zener (JANTXV1N4494US), (jc =4.5°C/W) for D-5A package Zener Current (Iz) 0.5(Iz max + Iz IZM=14mA & Iz=2.8mA. nom) Derated current = 215mA. Applied current = 35uA. Power 0.5 Rated @ 1.5W at TL=30°C. Derated power = 750mW. Applied power = 140V*0.25uA=3.5uW. Maximum Junction Temperature (Tj) 0.8 Rated at 175°C. Derated Tj = 125°C. Maximum junction temp = 75C P/F nom) Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P D500 P P P D600 P P P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Ref. Des 0.5(Iz max + Iz nom) Power 0.5 Maximum Junction Temperature (Tj) 0.8 P/F CR5,D12 Diode, 12V Zener (JANTXV1N4106UR-1)(jc =250°C/W) for MELF package Zener Current (Iz) Page 15 of 32 P IZM=32mA & Iz=250uA. Derated current = 16.125mA. Applied current = 600uA. Rated @ 500mW at TL=50°C. Derated power = 250mW. Applied power = 12V*600uA=7.2mW. Rated at 175°C. Derated Tj = 125°C. Maximum junction temp = 75C P P Table 5 - Parts Stress Worksheet, Diode, Switching Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des D502-503, D509,D599, D602-603, D609,D699 Diode, 75V Switching (JANTXV1N4153UR-1) PIV Forward current 0.7 0.5 Maximum Junction Temperature (Tj) 0.8 0.7 0.5 Maximum Junction Temperature (Tj) 0.8 P 70 volt * .7 = 49 volts Applied voltage = 10V Rated current = 150mA * 0.5 = 75mA Applied 4mA Rated at 175°C. Derated Tj = 125°C. Maximum junction temp = 75C P P D501,D504, D507-508, D601,D604, D607-608 Diode, 75V Switching (JANTXV1N5806US) PIV Forward current P/F 150 volt * 0.7 = 105V. Applied = 70V Rated current = 2.5 Amps * 0.5 = 1.25Amps Applied 4mA. Rated at 175°C. Derated Tj = 125°C. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Page 16 of 32 Ref. Des P/F Maximum junction temp = 75C Table 6 - Parts Stress Worksheet, Poly-Switch Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F Fuse Current Rating 0.5 Current Rated Ih = 1.10A. Derated to 0.55A. Applied current = 0.25A F2,F3 P Fuse Current Rating 0.5 Current Rated Ih = 0.65A. Derated to 0.33A. Applied current = 0.21A F4,F5 P Analysis Ref. Des P/F VR5 P Fuse,Resetable, Poly-Switch Table 7 - Parts Stress Worksheet, EMI Filter, ARF461 Part Type Derating Parameter EEE-INST-0002 Filter Module, EMI, ARF461, MIL-PRF-38534, Unit derated by manufacturer per MIL-STD-975 Rated Current 1.0 Rated Voltage 1.0 Maximum Ambient Temperature 110C Rated Current = 3A. Derated current = 3A. Applied Current = 0.837A. Rated Voltage = 50V. Derated voltage = 50V. Applied Voltage = 29V. Rated at 125°C. Derated Tj = 125°C. Maximum junction temp = 65C Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 17 of 32 Table 8 - Parts Stress Worksheet, CMOS LOGIC Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des Microcircuit, Digital , Radiation Hardened, Quad NOR Gate, CMOS, Logic (5962R9582602VXC) jc = 20.0°C/W for 14 lead flatpack Output Current (fanout) 0.8 Iol/Ioh = 3.5mA/output source. Derated Ioh/Iol = 2.8mA. Applied Current = 2.2mA. P/F U1,2,21,22,561,661 P Maximum Supply or Input Voltage 0.9 Rated for 20V, Derating 20V*0.9 = 18V, Highest applied voltage 12.6V. P Power 0.8 Rated power = 500mW, Derated power = 400mW, Maximum supply current 8.59mA, or 103.1mW at 12V, therefore the power dissipation will be within typical operating limits. P Maximum Junction Temperature (Tj) 0.8 not to exceed 100°C Max Tj = 125°C. Derated to 100°C. Maximum junction temp = 75C P Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des Microcircuit, Digital , CMOS, Multivibrator (5962R9663601VXC) jc = 30.0°C/W for 14 lead flatpack Output Current (fanout) 0.8 Iol/Ioh = 5.2mA/output source. Derated Ioh/Iol = 4.16mA. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P/F U1 P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Page 18 of 32 Ref. Des P/F Applied Current = 12V/5.62KOhms = 2.2mA. Maximum Supply or Input Voltage 0.9 Rated for 18V. Derating 18V*0.9 = 16.2V. Highest applied voltage 12.6V. P Power 0.8 Rated power = 0.43W. Derated power = 0.34W. Maximum supply current 15.72mA, or 198.1mW at 12.6V, therefore the power dissipation will be within typical operating limits. P Maximum Junction Temperature (Tj) 0.8 not to exceed 100°C Max Tj = 125°C. Derated to 100°C. Maximum junction temp = 75C P Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 19 of 32 Table 9 - Parts Stress Worksheet, Bipolar OP AMP, Linear Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F U504,604 Microcircuit, Analog, Bipolar, Op Amp (5962L8771002VXA) jc = 30.0°C/W for 10 lead flatpack Output Current 0.8 Iol/Ioh = 5.2mA/output source. Derated Ioh/Iol = 4.16mA. Applied Current = 12V/5.62KOhms = 2.2mA. P Maximum Supply or Input Voltage 0.9 Rated for 32V. Derating 32V*0.9 = 29V. Highest applied voltage 12.6V. P Power 0.75 Rated power = 0.85W. Derated power = 0.64W. Maximum supply current 2mA, or 30mW at 12.6V, therefore the power dissipation will be within typical operating limits. P Maximum Junction Temperature (Tj) 0.75 not to exceed 100°C Max Tj = 125°C. Derated to 100°C. Maximum junction temp = 75C P Table 10 - Parts Stress Worksheet, DC-DC Converter, MAX724 Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F U6-8,U10, U15,U17-18 P Microcircuit, IC, Power, MAX724ECK, jc = 2.5°C/W for TO-220 package. Maximum Supply or Input Voltage 0.8 Rated for at least 40 V. Derating 40V*.8 = 32. Highest applied voltage 29 V. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Part Type Derating Parameter EEE-INST-0002 Analysis Power Dissipation 0.8 Maximum Operating Junction Temperature (Tj) 0.8 not to exceed 100°C Maximum Output Current 0.8 Power dissipation rated at 10W. Derated to 8W, Output Power = 5W, Power dissipated= 2.5W (per spec formula). Max Tj = 125°C. Derated to 100°C. Assumed maximum applied temp. = 60°C baseplate + 10°C baseplate-to-PWB rise + 815.2mW * 2.5°C/W = 72.04°C. Rated = 5A. Derated to 5A*0.8 = 4A. Applied = 2.0A. Page 20 of 32 Ref. Des P/F P P P Table 11 - Parts Stress Worksheet, Inductor Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F L1-7, L10-14 Inductor, 50uH, 5A, Coast/ACM Operating Dielectric Voltage 0.5 Operating Temperature MILSTD-981 P Rated Voltage = 100V. Derated voltage = 50V. Applied Voltage = 29V Max Tempewrature = 125C Derate to 105C. Max Temp = 66C P L501,601 Inductor, 50uH, 5A, Coast/ACM Operating Dielectric Voltage 0.5 Operating Temperature MILSTD-981 Max Tempewrature = 125C Derate to 105C. Max Temp = 66C Max Temp Rise = 66C Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 21 of 32 Table 12 - Parts Stress Worksheet, P-Channel MOSFET, IRHNJ597034 Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des Transistor, P-Channel MOSFET (IRHNJ597034), jc = 1.67°C/W for SMD-0.5 package. Current 0.75 Voltage (BVdss) 0.75 Voltage (Vgs) 0.75 Power 0.6 Maximum Junction Temperature (Tj) 0.8 Rated Current = 16A. Derated Current = 12A. Applied Current = 838mA BVdss rated -60V min. Derated BVgss = 45V. Applied BVdss = 29.4V Max rated Vgs is 20V. Derated Vgs = 15V. Applied Vgs = 12V Rated 75W at 25°C. Derated power is 45W. Applied power = RDSon=0.06*838mA^2=42.2mW Rated at 150°C. Derated temp. = 120°C. Maximum applied temp. = 72°C 42.2mW*1.67°C/W = 73°C. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P/F Q10-12, P P P P P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 22 of 32 Table 13 - Parts Stress Worksheet, Transistor, Bipolar Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des Transistor, Bipolar, NPN, JANTVX2N2222AUB, jc = 5°C/W for cersot-23 package. Current 0.75 Voltage 0.75 Power 0.6 Maximum Junction Temperature (Tj) 0.8 Part Type Derating Parameter EEE-INST-0002 0.75 P P P P/F Q504,Q550, Q604,Q650 P Rated Current = 1A. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. P Ref. Des Transistor, Bipolar, NPN, JANTXV2N3439AU, jc = 5°C/W for cersot package. Current Q1-2,Q4, Q6,Q20-24, Q26-27, Q501-503, Q505,Q508, Q601-603, Q605,Q608 Rated Current = 800mA. Derated Current = 600mA. Applied Current = 39mA Max VCE = 50V. Derated voltage = 37.5V. Applied VcE = 29.4 V. Rated power = 500mW at TA = 25°C. Derated Pd = 300mW. VceSat=1.0Vmax. Max applied Pd = 1.0V * 39.0mA = 39.0mW (assumed saturated operation) Rated at 200°C. Derated temp. = 160°C. Assumed maximum applied temp. = 60°C baseplate + 10°C baseplate-to-PWB rise + 39.0mW*5°C/W = 70.2°C. Analysis P/F Form # LAT-TD-**** LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 Voltage 0.75 Power 0.6 Maximum Junction Temperature (Tj) 0.8 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Ref. Des Derated Current = 750mA. Applied Current = 39mA Max VCE = 350V. Derated voltage = 260V. Applied VCE = 140V. Rated power = 800mW at TA = 25°C. Derated Pd = 300mW. VceSat=1.0Vmax. Max applied Pd = 1.0V * 39.0mA = 39.0mW (assumed saturated operation) Rated at 200°C. Derated temp. = 160°C. Assumed maximum applied temp. = 60°C baseplate + 10°C baseplate-to-PWB rise + 39.0mW*5°C/W = 70.2°C. Analysis 0.75 Voltage 0.75 Power 0.6 Maximum Junction Temperature (Tj) 0.8 P P P/F Q599,699 Rated Current = 600mA. Derated Current = 450mA. Applied Current = 39mA Max VcE = 60V. Derated voltage = 45V. Applied VcE = 29.4 V. Rated power = 800mW at TA = 25°C. Derated Pd = 480mW. VceSat=1.6Vmax. Max applied Pd = 1.6V * 441.1uA = 705.8uW (assumed saturated operation) Rated at 200°C. Derated temp. = 160°C. Assumed maximum applied temp. = 60°C Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. P/F P Ref. Des Transistor, Bipolar, NPN, JANTXV2N2907AUB, jc = 6.7°C/W for cersot package. Current Page 23 of 32 Form # LAT-TD-**** P P P P LAT-TD-02655-01 Part Type Derating Parameter PSB Parts Stress/Electrical Worst Case Analysis EEE-INST-0002 Analysis Page 24 of 32 Ref. Des P/F Ref. Des P/F baseplate + 10°C baseplate-to-PWB rise + 705.8uW*6.7°C/W = 70.0°C. Table 14 - Parts Stress Worksheet, Resistor, Fixed, 3 Watt Part Type Derating Parameter EEE-INST-0002 Analysis R22 Resistor, Fixed, wire wound, RWR89NR200FR Voltage 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 2.1V. Rated Power=50mW. Derated power = 30mW. Pd =22.9mW. P Table 15 - Parts Stress Worksheet, Resistor, Fixed, Film , 2512 Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des R580,680 Resistor, Fixed, Film, M55342K09B1F00R, 1MEG (2512) Voltage 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P/F Rated voltage = 200V. Derated voltage = 160V. Max. applied voltage = 140V. Rated Power=1.0W. Derated power = 600mW. Pd =20mW. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 Part Type Derating Parameter PSB Parts Stress/Electrical Worst Case Analysis EEE-INST-0002 Analysis Ref. Des 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C Part Type Derating Parameter EEE-INST-0002 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C Part Type Derating Parameter EEE-INST-0002 Analysis 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P Ref. Des P/F R511 P Rated voltage = 200V. Derated voltage = 160V. Max. applied voltage = 1V. Rated Power=1.0W. Derated power = 600mW. Pd =50mW. Analysis P Ref. Des P/F R611 Resistor, Fixed, Film, M55342K09B10D0R, 10 Ohm, (2512) Voltage P Rated voltage = 200V. Derated voltage = 160V. Max. applied voltage = 70V. Rated Power=1.0W. Derated power = 600mW. Pd =490uW. Resistor, Fixed, Film, M55342K09B1F00R, 22.1 Ohm, (2512) Voltage P/F R543,544 Resistor, Fixed, Film, M55342K09B10F0, 10EG (2512) Voltage Page 25 of 32 Rated voltage = 200V. Derated voltage = 160V. Max. applied voltage = 1V. Rated Power=1.0W. Derated power = 600mW. Pd =100mW. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Ref. Des 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C Part Type Derating Parameter EEE-INST-0002 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P Rated voltage = 200V. Derated voltage = 160V. Max. applied voltage = 1V. Rated Power=1.0W. Derated power = 600mW. Pd =80mW. Analysis P Ref. Des P/F R230 Resistor, Fixed, Film, M55342K09B2E00R, 2K, (2512) Voltage P/F R519,619 Resistor, Fixed, Film, M55342K09B4E99R, 4.99K, (2512) Voltage Page 26 of 32 Rated voltage = 200V. Derated voltage = 160V. Max. applied voltage = 12V. Rated Power=1.0W. Derated power = 600mW. Pd =70mW. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 27 of 32 Table 16 - Parts Stress Worksheet, Resistor, Fixed, Film, (1206) Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des R532 Resistor, Fixed, Film, D55342K07B402ER, 402K, (1206) Voltage 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C Rated voltage = 100V. Derated voltage = 60V. Max. applied voltage = 40V. Rated Power=250mW. Derated power = 600mW. Pd =4mW. Part Type Derating Parameter EEE-INST-0002 Analysis 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P P Ref. Des P/F R531, R553-555, R631-633, R653-655 Resistor, Fixed, Film, D55342K07B511ER, 511K, (1206) Voltage P/F Rated voltage = 100V. Derated voltage = 60V. Max. applied voltage = 40V. Rated Power=250mW. Derated power = 600mW. Pd =4.25mW. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 28 of 32 Table 17 - Parts Stress Worksheet, Resistor, Fixed, Jumper 0705 Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des R23-24, R117,R516, R545,R616, R645,ZR24, ZR26, ZR29-30, ZR69,ZR72, ZR99-102 Resistor, Fixed, Film, Chip, ER (RM0705) Voltage N/A Current 0.6 to 70°C, -1.25%/°C to 118°C P/F P Rated Current=1 Amp. Derated power = 0.5Amp. Id=10mA. Table 18 - Parts Stress Worksheet, Resistor, Fixed, Film, (0705) Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des R501,R530, R601,R630, R50,R122, R142 Resistor, Fixed, Film, Chip, ER (RM0705) 100-549 Ohm Voltage 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P/F Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 1.2V Rated Power=50mW. Derated power = 30mW. Pd =10mW. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** p P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Ref. Des 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C Part Type Derating Parameter EEE-INST-0002 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C p Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 3.6V Rated Power=50mW. Derated power = 30mW. Pd =10mW. Analysis P Ref. Des P/F R509,R609, R508,R608, R14,R9,R10 Resistor, Fixed, Film, Chip, ER (RM0705) 4.75K-8.25K Voltage P/F R20,R53,R58, R61,R5,R8, R21,R25,R28, R51,R52,R3, R4,R17,R41, R48,R83,R552, R652,R37,R39, R40,R6467,R71,R75, R77 Resistor, Fixed, Film, Chip, ER (RM0705) 1.21K-2.74K Voltage Page 29 of 32 Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 4V Rated Power=50mW. Derated power = 30mW. Pd =3.4mW. Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P P LAT-TD-02655-01 Part Type Derating Parameter EEE-INST-0002 PSB Parts Stress/Electrical Worst Case Analysis Analysis Ref. Des 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C Part Type Derating Parameter EEE-INST-0002 0.8 to 70°C, -1.67%/°C to 118°C P Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 10V Rated Power=50mW. Derated power = 30mW. Pd =10mW. Analysis P Ref. Des P/F R34,R45, R512,R566, R612,R666 R667 R27,R42, R598-599, R698-699 Resistor, Fixed, Film, Chip, ER (RM0705) 22.1K-49.9K Voltage P/F R85-87, R502,R518, R522, R550-551, R567,R602, R618,R622, R650-651, ZR63,ZR68, ZR9598,R19,R231, R505,R507, R510,R525, R605,R607, R610,R625 Resistor, Fixed, Film, Chip, ER (RM0705) 10K-20K Voltage Page 30 of 32 Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 10V Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** P LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Part Type Derating Parameter EEE-INST-0002 Analysis Power 0.6 to 70°C, -1.25%/°C to 118°C Rated Power=50mW. Derated power = 30mW. Pd =10mW. Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des 0.8 to 70°C, -1.67%/°C to 118°C Power 0.6 to 70°C, -1.25%/°C to 118°C P/F P Ref. Des P/F R6-7, R200-204, R206-207, R597,R697 Resistor, Fixed, Film, Chip, ER (RM0705) 100K Voltage Page 31 of 32 P Rated voltage = 50V. Derated voltage = 40V. Max. applied voltage = 26V Rated Power=50mW. Derated power = 30mW. Pd =10mW. P Table 19 - Parts Stress Worksheet, Thermistor Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des R1-R1 Thermistor Dissipation constant P/F P Maximum increase to 50 times or 100C, whichever is less Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-**** LAT-TD-02655-01 PSB Parts Stress/Electrical Worst Case Analysis Page 32 of 32 Table 20 - Parts Stress Worksheet, Connector Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F J1-2 Connector Voltage 0.25 (sea level) Rated voltage = 1000V at sea level. Derated voltage = 250V. Highest applied voltage=140V P Maximum Temperature Rated 25°C Rated temp. = 125°C. Derated temp. = 100°C Assumed maximum applied temp. = 60°C baseplate + 10°C baseplate-to-PWB rise = 70°C. P Table 21 - Parts Stress Worksheet, Wire 24AWG PTFE 600Volt Part Type Derating Parameter EEE-INST-0002 Analysis Ref. Des P/F N/A Wire, MIL-W-22759/11 Voltage 0.25 (sea level) Rated voltage = 600V at sea level. Derated voltage = 250V. Highest applied voltage=140V P Maximum Temperature Rated 25°C Rated temp. = 200°C. Derated temp. = 100°C Assumed maximum applied temp. = 60°C baseplate + 10°C baseplate-to-PWB rise = 70°C. P Hard copies of this document are for REFERENCE ONLY and should not be considered the latest revision beyond the date of printing. Form # LAT-TD-****