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LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Document #
Page 1 of 32
Date Effective
6/21/2017 1:09 AM
LAT-TD-04516-02
Author(s)
Supersedes
David Nelson
GLAST LAT ELECTRONICS TECHNICAL
DOCUMENT
Subsystem/Office
Document Title
Parts Stress/Electrical Worst Case Analysis, TPS Power Supply
Gamma Ray Large Area Space Telescope
(GLAST)
Large Area Telescope (LAT)
Parts Stress/Electrical Worst Case Analysis
TPS Power Supply
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # GF-00006-A
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
CHANGE HISTORY LOG
Revision Effective Date
02
8/18/04
Page 2 of 32
Description of Changes
Corrected 0705 100-549 Ohm voltage from 12V to 1.2V
Corrected 0705 Jumper for current rating
Added derating standard in Table 7.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 3 of 32
DOCUMENT APPROVAL
Prepared by:
David Nelson
Date
11/19/2003
Date
Approved by:
Date
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 4 of 32
Table of Contents
1.
INTRODUCTION ...............................................................................................................................................5
Issues Identified and Resolved During Analysis .......................................................................................................5
2. PURPOSE ............................................................................................................................................................5
3. SCOPE ..................................................................................................................................................................5
Capacitor Stress Analysis. .........................................................................................................................................5
Connector Stress Analysis. ........................................................................................................................................6
Resistor Stress Analysis. ............................................................................................................................................6
Diodes. .......................................................................................................................................................................6
Transistors. ................................................................................................................................................................6
Microcircuits. .............................................................................................................................................................6
Thermistors. ...............................................................................................................................................................7
4. DEFINITIONS AND ACRONYMS ...................................................................................................................7
Definitions .................................................................................................................................................................7
Acronyms ..................................................................................................................................................................8
5. REFERENCES ....................................................................................................................................................9
6. PARTS STRESS ANALYSIS WORKSHEETS ................................................................................................9
List of Tables
TABLE 1 APPLICABLE DOCUMENTS ....................................................................................................................................... 9
TABLE 2 - PARTS STRESS WORKSHEET, CAPACITOR, CERAMIC & TANTALUM.................................................................... 10
TABLE 3 - PARTS STRESS WORKSHEET, DIODE, SCHOTTKY ................................................................................................ 13
TABLE 4 - PARTS STRESS WORKSHEET, DIODE, ZENER ....................................................................................................... 13
TABLE 5 - PARTS STRESS WORKSHEET, DIODE, SWITCHING ............................................................................................... 15
TABLE 6 - PARTS STRESS WORKSHEET, POLY-SWITCH ....................................................................................................... 16
TABLE 7 - PARTS STRESS WORKSHEET, EMI FILTER, ARF461 ........................................................................................... 16
TABLE 8 - PARTS STRESS WORKSHEET, CMOS LOGIC ...................................................................................................... 17
TABLE 9 - PARTS STRESS WORKSHEET, BIPOLAR OP AMP, LINEAR .................................................................................. 19
TABLE 10 - PARTS STRESS WORKSHEET, DC-DC CONVERTER, MAX724 .......................................................................... 19
TABLE 11 - PARTS STRESS WORKSHEET, INDUCTOR ........................................................................................................... 20
TABLE 12 - PARTS STRESS WORKSHEET, P-CHANNEL MOSFET, IRHNJ597034 ............................................................... 21
TABLE 13 - PARTS STRESS WORKSHEET, TRANSISTOR, BIPOLAR ........................................................................................ 22
TABLE 14 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, 3 WATT .................................................................................. 24
TABLE 15 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, FILM , 2512 ............................................................................ 24
TABLE 16 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, FILM, (1206)........................................................................... 27
TABLE 17 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, JUMPER 0705 .......................................................................... 28
TABLE 18 - PARTS STRESS WORKSHEET, RESISTOR, FIXED, FILM, (0705)........................................................................... 28
TABLE 19 - PARTS STRESS WORKSHEET, THERMISTOR ....................................................................................................... 31
TABLE 20 - PARTS STRESS WORKSHEET, CONNECTOR ........................................................................................................ 32
TABLE 21 - PARTS STRESS WORKSHEET, WIRE 24AWG PTFE 600VOLT ........................................................................... 32
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 5 of 32
1. INTRODUCTION
The TPS Power Supply Board (PSB) electrical stress analysis was performed in accordance with the
methodology agreed to between GSFC and LAT as detailed in Section 3, SCOPE. Each grouping of
parts was analyzed under realizable worst case conditions of maximum voltage, maximum current,
maximum operational temperature, and radiation effects. The applied electrical stresses were
compared to the manufacturer's specified stresses and to EEE-INST-0002 electrical stress derating
criteria. Details of the Power Supply Board analysis are provided in Section 6, Parts Stress Analysis
Worksheets.
The electrical stress analysis results indicate that the Board part applications meet the derating
requirements of EEE-INST-0002.
The 70 °C maximum part temperature used in this analysis was calculated as the sum of the
60 °C cold plate temperature plus a 10 °C rise to the part. Semiconductor junction temperatures
were calculated as 70 °C case temperature plus the junction-to-case thermal resistance (jc) times
the power being dissipated by the part.
Issues Identified and Resolved During Analysis
The issues identified and resolved during the analysis are as follows:
None identified.
2. PURPOSE
The purpose of this analysis was to verify adequate part electrical derating margins, in accordance
with EEE-INST-0002 and stress analysis as per MAR.
3. SCOPE
An electrical stress analysis is normally performed and documented for each individual part and
listed by reference designator, part number, and nomenclature in the worksheets.
The method proposed by the LAT EEE parts engineers and GSFC reliability engineer and approved
by the GSFC SAM is based on, where possible, to group devices as described below, and apply a
maximum stress to the weakest part. If this worst case scenario passed the derating criteria then the
whole group would pass. Additional details for this approach as used for each of the part types is
provided in the following paragraphs.
Capacitor Stress Analysis.
Capacitors of the same type were grouped together and the highest applied DC bus voltage plus a
5% tolerance (for example 3.3V was assumed to be 3.465V) was applied to the lowest voltage rated
capacitor. If that scenario resulted in a pass condition then all higher voltage rated capacitors
connected to the 3.3V bus will also pass. A similar analysis was applied for the temperature
derating.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 6 of 32
Connector Stress Analysis.
Connectors were grouped together and the highest applied DC bus voltage plus a 5% tolerance (for
example 28V was assumed to be 29.4V) was applied to the connector pins. If that scenario results in
a pass condition then all connectors will pass. A similar analysis was applied for the temperature
derating.
Resistor Stress Analysis.
Resistors of the same type and power dissipation rating were grouped together and the highest
applied DC bus voltage plus a 5% tolerance (for example 3.3V was assumed to be 3.465V) was
applied to all the resistors. The lowest resistance value that would pass the derating criteria with
100% of the bus voltage applied was calculated as follows:
Minimum resistance within the derating criteria = Max Bus Voltage squared / Derated
Resistor Power Rating
All resistors of this value or higher will pass the derating criteria. Those resistors that did not pass
this gross analysis screening were subjected to individual analysis using the actual applied voltage.
Diodes.
Diodes were grouped together by type and circuit application. The highest applied forward current
was then calculated. If that scenario resulted in a pass condition then all diodes in a similar
application will also pass. A similar approach was applied for the following analyses:
Voltage Reference and Zener Diodes – Power and Junction Temperature
Rectifier Diodes – Peak Inverse Voltage, Surge Current and Junction Temperature
Transistors.
Transistors were grouped together by type and circuit application. The highest applied current was
then calculated and if a pass condition resulted then all transistors in a similar application will also
pass the current analysis. A similar approach was applied for voltage, power and junction
temperature analyses.
Microcircuits.
Microcircuits were grouped together and the analysis approach for the grouped microcircuits was as
follows:

Fanout Analysis – Typical CMOS microcircuit input leakage current is 10uA per input. The
minimum derated output drive current for IC’s on the Auxiliary board is 6.4MA for the
UT54ACS14UQAH Inverter devices. The UT22VP10C-20PCA PLA device, which has an
output rating of 12.0mA, has the greatest number of fanouts at 24. Therefore the 80%
derating criteria is met even when applying the greatest fanout load of 240uA to the lowest
rated IC output of 6.4mA.

Power Dissipation Analysis – All IC’s are operating within the fanout derating criteria at a
switching rate much less than the derated maximum frequency limit, therefore the power
dissipated will be within the derating criteria.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01

PSB Parts Stress/Electrical Worst Case Analysis
Page 7 of 32
Junction Temperature Analysis – Junction temperatures were calculated as follows:
Junction temperature = Tcase + jc * Pd
Where: Tcase = 70°C
jc = Thermal resistance junction-to-case
Pd = Power being dissipated by the device
Thermistors.
The highest applied current through the thermistor operating at the maximum part temperature of
70°C was determined and power dissipation was calculated as P=I2/R.
4. DEFINITIONS AND ACRONYMS
The following terms, definitions, abbreviations, and acronyms are used in this document:
Definitions
A Analysis
An Analog
Acc Accuracy
adj adjustable
cm
centimeter
D, Dg Digital
D Demonstration
DR Data Rate
Eff Efficiency
F Functional
Hz Hertz, unit of frequency
I Inspection
kHz kilohertz, 103 Hz
MHz Megahertz, 106 Hz
msec millisecond, 10-3 s
mV millivolt, 10-3 V
P Performance
p-p peak-to-peak
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 8 of 32
P/F Pass/Fail
s, sec seconds
T Test
Ti Time
V Volt
W
Watt
Acronyms
AIDS
Assembly and Inspection Data Sheet
GLAST
Gamma Ray Large Area Space Telescope
LAT
Large Area Telescope
MAR
Mission Assurance Requirements
MIP
Mandatory Inspection Point
TEM
Tower Electronics Module
PAIP
Performance Assurance Implementation Plan
TPS
Tower Power Supply Board
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 9 of 32
5. REFERENCES
The analysis baseline documents used in the performance of this analysis are listed in Error!
Reference source not found..
Table 1 Applicable Documents
Document/Drawing Number
Revision
Date
Document Title or Description
LAT-DS-02390-53
10/01/03
Schematic, TPS Power Supply
LAT-TD-2391-53
4/3/03
Bill of Materials
LAT-DS-01723-01
LAT-DS-01281
LAT-DS-01652
EEE-INST-0002 Stress
Analysis
Circuit Card Assembly, TPS PSU
Specification, TPS PSU
Test Procedure, TPS PSU
Requirements/Guidelines
May 2003 Goddard Space Flight Center, Part Derating
Criteria
GLAST LAT MAR
6. PARTS STRESS ANALYSIS WORKSHEETS
The part level electrical stress analysis results are provided in the worksheets contained in the
following tables. The methodology and assumptions used in formulating this report are presented in
Section 3, SCOPE.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 10 of 32
Table 2 - Parts Stress Worksheet, Capacitor, Ceramic & Tantalum
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
Voltage
0.6
Lowest Rated Voltage =50V, Derated voltage = 30V,
Highest Applied Voltage = 29V
P
Voltage
0.6
Lowest Rated Voltage =100V, Derated voltage = 60V,
Highest Applied Voltage = 28V
C8,C10,C29,C65,
C81,C155-164,
C166-175,
C220,C505,
C509,C560,
C605,C609,
C660
C530,630
Voltage
0.6
Lowest Rated Voltage =100V, Derated voltage = 60V ,
Highest Applied Voltage = 29V
C1,C5,C9,
C31,C33,
C35,C37,
C54,C62,
C66-67,
C70,C73,
C76,C110,
C114-115,
C165,C506,
C596,C598,
C606,C696,
C698
P
Voltage
0.6
Lowest Rated Voltage =100V, Derated voltage = 60V ,
Highest Applied Voltage = 40V
P
Voltage
0.5
Lowest Rated Voltage =50V, Derated voltage = 30V ,
Highest Applied Voltage = 2.5V
C176-177,
C200-204,
C206-207,
C507,
C531-532,
C562,C607,
C631-633,
C662
C6-7,C32,
C36,C63,
C74,C77
Capacitor, Ceramic (CDR, CKR, CKS, CCR)
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # GF-00006-A
P
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 11 of 32
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
Voltage
0.6
Lowest Rated Voltage =100V, Derated voltage = 60V ,
Highest Applied Voltage = 12V
C503,C551,
C603,C651
P
Voltage
0.6
Lowest Rated Voltage =100V, Derated voltage = 60V ,
Highest Applied Voltage = 12V
C102,C512,
C561,C661
P
Voltage
0.6
Lowest Rated Voltage =100V, Derated voltage = 60V ,
Highest Applied Voltage = 12V
C221,C612
P
Voltage
0.6
Lowest Rated Voltage =250V, Derated voltage = 150V ,
Highest Applied Voltage = 75V
C501,C508,
C510-511,
C514,C540,
C601,C608,
C610-611,
C614,C640
P
Maximum Temperature
110°C
Rated @ 125°C
Maximum temp = 71C
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
Voltage
0.5
Lowest Rated Voltage =15V, Derated voltage = 7.5V,
Highest Applied Voltage = 2V
C550,C597,
C650,C697
P
Voltage
0.6
Lowest Rated Voltage =50V, Derated voltage = 30V,
Highest Applied Voltage = 29V
P
Voltage
0.5
Lowest Rated Voltage =10V, Derated voltage = 5V,
Highest Applied Voltage = 3.5V
C2-4,
C13-14,
C39-40,
C82,
C85-86,
C137-154,
C502,C602
C11-12,
C15-28,
C30,C34,
C38,
C41-53,
P
Capacitor, Tantalum (CWR, CLR)
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
LAT-TD-02655-01
Part Type Derating Parameter
PSB Parts Stress/Electrical Worst Case Analysis
EEE-INST-0002
Analysis
Page 12 of 32
Ref. Des
P/F
C55-61,
C64,
C68-69,
C71-72,
C75,
C78-79,
C87-100,
C103-104,
C108-109,
C111-113,
C116-136
Maximum Temperature
110°C
Rated @ 125°C
Maximum temp = 71C
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 13 of 32
Table 3 - Parts Stress Worksheet, Diode, Schottky
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
Rated Voltage = 40V. Derated voltage = 28V.
Applied Voltage = 28V
Max Tj = 150°C. Derated Tj = 110°C.
Maximum junction = 81C
D1-4,D8,
D19-20
P
Analysis
Ref. Des
Diode, Schottky (SSR1040G), (jc =1.0°C/W) for TO-263AB package
Peak Inverse Voltage (PIV)
0.7
Maximum Junction Temperature (Tj)
0.8
P
Table 4 - Parts Stress Worksheet, Diode, Zener
Part Type Derating Parameter
EEE-INST-0002
CR2
Diode, 3.3V Zener (JANTXV1N6485US), (jc =4.5°C/W) for D-5A package
Zener Current (Iz)
0.5(Iz max + Iz
nom)
Power
0.5
Maximum Junction Temperature (Tj)
0.8
P
IZM=433mA & Iz=76mA.
Derated current = 254.5mA.
Applied current = 50uA.
Rated @ 1.5W at TL=30°C.
Derated power = 750mW.
Applied power = 3.3V*50uA=165uW.
Rated at 175°C. Derated Tj = 125°C.
Maximum junction temp = 75C
P
P
CR1,CR3-4
Diode, 3.9V Zener (JANTXV1N6487US)
(jc =4.5°C/W) for D-5A package
Zener Current (Iz)
P/F
0.5(Iz max + Iz
IZM=366mA & Iz=64mA.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Page 14 of 32
Ref. Des
Derated current = 215mA.
Applied current = 35uA.
Power
0.5
Rated @ 1.5W at TL=30°C.
Derated power = 750mW.
Applied power = 3.9V*35uA=136.5uW.
Maximum Junction Temperature (Tj)
0.8
Rated at 175°C. Derated Tj = 125°C.
Maximum junction temp = 75C
Diode, 90. V Zener (JANTXV1N4488US), (jc =4.5°C/W) for D-5A package
Zener Current (Iz)
0.5(Iz max + Iz
IZM=14mA & Iz=2.8mA.
nom)
Derated current = 215mA.
Applied current = 35uA.
Power
0.5
Rated @ 1.5W at TL=30°C.
Derated power = 750mW.
Applied power = 90V*0.25uA=22uW.
Maximum Junction Temperature (Tj)
0.8
Rated at 175°C. Derated Tj = 125°C.
Maximum junction temp = 75C
Diode, 90. V Zener (JANTXV1N4494US), (jc =4.5°C/W) for D-5A package
Zener Current (Iz)
0.5(Iz max + Iz
IZM=14mA & Iz=2.8mA.
nom)
Derated current = 215mA.
Applied current = 35uA.
Power
0.5
Rated @ 1.5W at TL=30°C.
Derated power = 750mW.
Applied power = 140V*0.25uA=3.5uW.
Maximum Junction Temperature (Tj)
0.8
Rated at 175°C. Derated Tj = 125°C.
Maximum junction temp = 75C
P/F
nom)
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
D500
P
P
P
D600
P
P
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Ref. Des
0.5(Iz max + Iz
nom)
Power
0.5
Maximum Junction Temperature (Tj)
0.8
P/F
CR5,D12
Diode, 12V Zener (JANTXV1N4106UR-1)(jc =250°C/W) for MELF package
Zener Current (Iz)
Page 15 of 32
P
IZM=32mA & Iz=250uA.
Derated current = 16.125mA.
Applied current = 600uA.
Rated @ 500mW at TL=50°C.
Derated power = 250mW.
Applied power = 12V*600uA=7.2mW.
Rated at 175°C. Derated Tj = 125°C.
Maximum junction temp = 75C
P
P
Table 5 - Parts Stress Worksheet, Diode, Switching
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
D502-503,
D509,D599,
D602-603,
D609,D699
Diode, 75V Switching (JANTXV1N4153UR-1)
PIV
Forward current
0.7
0.5
Maximum Junction Temperature (Tj)
0.8
0.7
0.5
Maximum Junction Temperature (Tj)
0.8
P
70 volt * .7 = 49 volts Applied voltage = 10V
Rated current = 150mA * 0.5 = 75mA
Applied 4mA
Rated at 175°C. Derated Tj = 125°C.
Maximum junction temp = 75C
P
P
D501,D504,
D507-508,
D601,D604,
D607-608
Diode, 75V Switching (JANTXV1N5806US)
PIV
Forward current
P/F
150 volt * 0.7 = 105V. Applied = 70V
Rated current = 2.5 Amps * 0.5 = 1.25Amps
Applied 4mA.
Rated at 175°C. Derated Tj = 125°C.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Page 16 of 32
Ref. Des
P/F
Maximum junction temp = 75C
Table 6 - Parts Stress Worksheet, Poly-Switch
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
Fuse Current Rating
0.5
Current Rated Ih = 1.10A. Derated to 0.55A.
Applied current = 0.25A
F2,F3
P
Fuse Current Rating
0.5
Current Rated Ih = 0.65A. Derated to 0.33A.
Applied current = 0.21A
F4,F5
P
Analysis
Ref. Des
P/F
VR5
P
Fuse,Resetable, Poly-Switch
Table 7 - Parts Stress Worksheet, EMI Filter, ARF461
Part Type Derating Parameter
EEE-INST-0002
Filter Module, EMI, ARF461, MIL-PRF-38534,
Unit derated by manufacturer per MIL-STD-975
Rated Current
1.0
Rated Voltage
1.0
Maximum Ambient Temperature
110C
Rated Current = 3A. Derated current = 3A.
Applied Current = 0.837A.
Rated Voltage = 50V. Derated voltage = 50V.
Applied Voltage = 29V.
Rated at 125°C. Derated Tj = 125°C.
Maximum junction temp = 65C
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 17 of 32
Table 8 - Parts Stress Worksheet, CMOS LOGIC
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
Microcircuit, Digital , Radiation Hardened, Quad NOR Gate, CMOS, Logic (5962R9582602VXC)
jc = 20.0°C/W for 14 lead flatpack
Output Current (fanout)
0.8
Iol/Ioh = 3.5mA/output source.
Derated Ioh/Iol = 2.8mA.
Applied Current = 2.2mA.
P/F
U1,2,21,22,561,661
P
Maximum Supply or Input Voltage
0.9
Rated for 20V, Derating 20V*0.9 = 18V,
Highest applied voltage 12.6V.
P
Power
0.8
Rated power = 500mW,
Derated power = 400mW,
Maximum supply current 8.59mA, or
103.1mW at 12V, therefore the power
dissipation will be within typical operating
limits.
P
Maximum Junction Temperature (Tj)
0.8
not to exceed 100°C
Max Tj = 125°C. Derated to 100°C.
Maximum junction temp = 75C
P
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
Microcircuit, Digital , CMOS, Multivibrator (5962R9663601VXC)
jc = 30.0°C/W for 14 lead flatpack
Output Current (fanout)
0.8
Iol/Ioh = 5.2mA/output source.
Derated Ioh/Iol = 4.16mA.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P/F
U1
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Page 18 of 32
Ref. Des
P/F
Applied Current = 12V/5.62KOhms = 2.2mA.
Maximum Supply or Input Voltage
0.9
Rated for 18V. Derating 18V*0.9 = 16.2V.
Highest applied voltage 12.6V.
P
Power
0.8
Rated power = 0.43W. Derated power = 0.34W.
Maximum supply current 15.72mA, or
198.1mW at 12.6V, therefore the power
dissipation will be within typical operating
limits.
P
Maximum Junction Temperature (Tj)
0.8
not to exceed 100°C
Max Tj = 125°C. Derated to 100°C.
Maximum junction temp = 75C
P
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 19 of 32
Table 9 - Parts Stress Worksheet, Bipolar OP AMP, Linear
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
U504,604
Microcircuit, Analog, Bipolar, Op Amp (5962L8771002VXA)
jc = 30.0°C/W for 10 lead flatpack
Output Current
0.8
Iol/Ioh = 5.2mA/output source.
Derated Ioh/Iol = 4.16mA.
Applied Current = 12V/5.62KOhms = 2.2mA.
P
Maximum Supply or Input Voltage
0.9
Rated for 32V. Derating 32V*0.9 = 29V.
Highest applied voltage 12.6V.
P
Power
0.75
Rated power = 0.85W. Derated power = 0.64W.
Maximum supply current 2mA, or 30mW at
12.6V, therefore the power dissipation will be
within typical operating limits.
P
Maximum Junction Temperature (Tj)
0.75
not to exceed 100°C
Max Tj = 125°C. Derated to 100°C.
Maximum junction temp = 75C
P
Table 10 - Parts Stress Worksheet, DC-DC Converter, MAX724
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
U6-8,U10,
U15,U17-18
P
Microcircuit, IC, Power, MAX724ECK, jc = 2.5°C/W for TO-220 package.
Maximum Supply or Input Voltage
0.8
Rated for at least 40 V. Derating 40V*.8 = 32.
Highest applied voltage 29 V.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Part Type Derating Parameter
EEE-INST-0002
Analysis
Power Dissipation
0.8
Maximum Operating Junction
Temperature (Tj)
0.8
not to exceed 100°C
Maximum Output Current
0.8
Power dissipation rated at 10W.
Derated to 8W,
Output Power = 5W,
Power dissipated= 2.5W (per spec formula).
Max Tj = 125°C. Derated to 100°C. Assumed
maximum applied temp. = 60°C baseplate +
10°C baseplate-to-PWB rise + 815.2mW *
2.5°C/W = 72.04°C.
Rated = 5A.
Derated to 5A*0.8 = 4A.
Applied = 2.0A.
Page 20 of 32
Ref. Des
P/F
P
P
P
Table 11 - Parts Stress Worksheet, Inductor
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
L1-7,
L10-14
Inductor, 50uH, 5A, Coast/ACM
Operating Dielectric Voltage
0.5
Operating Temperature
MILSTD-981
P
Rated Voltage = 100V. Derated voltage = 50V.
Applied Voltage = 29V
Max Tempewrature = 125C Derate to 105C.
Max Temp = 66C
P
L501,601
Inductor, 50uH, 5A, Coast/ACM
Operating Dielectric Voltage
0.5
Operating Temperature
MILSTD-981
Max Tempewrature = 125C Derate to 105C.
Max Temp = 66C
Max Temp Rise = 66C
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 21 of 32
Table 12 - Parts Stress Worksheet, P-Channel MOSFET, IRHNJ597034
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
Transistor, P-Channel MOSFET (IRHNJ597034), jc = 1.67°C/W for SMD-0.5 package.
Current
0.75
Voltage (BVdss)
0.75
Voltage (Vgs)
0.75
Power
0.6
Maximum Junction Temperature (Tj)
0.8
Rated Current = 16A. Derated Current = 12A.
Applied Current = 838mA
BVdss rated -60V min. Derated BVgss = 45V.
Applied BVdss = 29.4V
Max rated Vgs is 20V. Derated Vgs = 15V.
Applied Vgs = 12V
Rated 75W at 25°C. Derated power is 45W.
Applied power =
RDSon=0.06*838mA^2=42.2mW
Rated at 150°C. Derated temp. = 120°C.
Maximum applied temp. = 72°C
42.2mW*1.67°C/W = 73°C.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P/F
Q10-12,
P
P
P
P
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 22 of 32
Table 13 - Parts Stress Worksheet, Transistor, Bipolar
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
Transistor, Bipolar, NPN, JANTVX2N2222AUB, jc = 5°C/W for cersot-23 package.
Current
0.75
Voltage
0.75
Power
0.6
Maximum Junction Temperature (Tj)
0.8
Part Type Derating Parameter
EEE-INST-0002
0.75
P
P
P
P/F
Q504,Q550,
Q604,Q650
P
Rated Current = 1A.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
P
Ref. Des
Transistor, Bipolar, NPN, JANTXV2N3439AU, jc = 5°C/W for cersot package.
Current
Q1-2,Q4,
Q6,Q20-24,
Q26-27,
Q501-503,
Q505,Q508,
Q601-603,
Q605,Q608
Rated Current = 800mA.
Derated Current = 600mA.
Applied Current = 39mA
Max VCE = 50V. Derated voltage = 37.5V.
Applied VcE = 29.4 V.
Rated power = 500mW at TA = 25°C. Derated
Pd = 300mW. VceSat=1.0Vmax.
Max applied Pd = 1.0V * 39.0mA = 39.0mW
(assumed saturated operation)
Rated at 200°C. Derated temp. = 160°C.
Assumed maximum applied temp. = 60°C
baseplate + 10°C baseplate-to-PWB rise +
39.0mW*5°C/W = 70.2°C.
Analysis
P/F
Form # LAT-TD-****
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
Voltage
0.75
Power
0.6
Maximum Junction Temperature (Tj)
0.8
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Ref. Des
Derated Current = 750mA.
Applied Current = 39mA
Max VCE = 350V. Derated voltage = 260V.
Applied VCE = 140V.
Rated power = 800mW at TA = 25°C. Derated
Pd = 300mW. VceSat=1.0Vmax.
Max applied Pd = 1.0V * 39.0mA = 39.0mW
(assumed saturated operation)
Rated at 200°C. Derated temp. = 160°C.
Assumed maximum applied temp. = 60°C
baseplate + 10°C baseplate-to-PWB rise +
39.0mW*5°C/W = 70.2°C.
Analysis
0.75
Voltage
0.75
Power
0.6
Maximum Junction Temperature (Tj)
0.8
P
P
P/F
Q599,699
Rated Current = 600mA.
Derated Current = 450mA.
Applied Current = 39mA
Max VcE = 60V. Derated voltage = 45V.
Applied VcE = 29.4 V.
Rated power = 800mW at TA = 25°C. Derated
Pd = 480mW. VceSat=1.6Vmax.
Max applied Pd = 1.6V * 441.1uA = 705.8uW
(assumed saturated operation)
Rated at 200°C. Derated temp. = 160°C.
Assumed maximum applied temp. = 60°C
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
P/F
P
Ref. Des
Transistor, Bipolar, NPN, JANTXV2N2907AUB, jc = 6.7°C/W for cersot package.
Current
Page 23 of 32
Form # LAT-TD-****
P
P
P
P
LAT-TD-02655-01
Part Type Derating Parameter
PSB Parts Stress/Electrical Worst Case Analysis
EEE-INST-0002
Analysis
Page 24 of 32
Ref. Des
P/F
Ref. Des
P/F
baseplate + 10°C baseplate-to-PWB rise +
705.8uW*6.7°C/W = 70.0°C.
Table 14 - Parts Stress Worksheet, Resistor, Fixed, 3 Watt
Part Type Derating Parameter
EEE-INST-0002
Analysis
R22
Resistor, Fixed, wire wound, RWR89NR200FR
Voltage
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 2.1V.
Rated Power=50mW. Derated power = 30mW.
Pd =22.9mW.
P
Table 15 - Parts Stress Worksheet, Resistor, Fixed, Film , 2512
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
R580,680
Resistor, Fixed, Film, M55342K09B1F00R, 1MEG (2512)
Voltage
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P/F
Rated voltage = 200V. Derated voltage = 160V.
Max. applied voltage = 140V.
Rated Power=1.0W. Derated power = 600mW.
Pd =20mW.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
Part Type Derating Parameter
PSB Parts Stress/Electrical Worst Case Analysis
EEE-INST-0002
Analysis
Ref. Des
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Part Type Derating Parameter
EEE-INST-0002
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Part Type Derating Parameter
EEE-INST-0002
Analysis
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P
Ref. Des
P/F
R511
P
Rated voltage = 200V. Derated voltage = 160V.
Max. applied voltage = 1V.
Rated Power=1.0W. Derated power = 600mW.
Pd =50mW.
Analysis
P
Ref. Des
P/F
R611
Resistor, Fixed, Film, M55342K09B10D0R, 10 Ohm, (2512)
Voltage
P
Rated voltage = 200V. Derated voltage = 160V.
Max. applied voltage = 70V.
Rated Power=1.0W. Derated power = 600mW.
Pd =490uW.
Resistor, Fixed, Film, M55342K09B1F00R, 22.1 Ohm, (2512)
Voltage
P/F
R543,544
Resistor, Fixed, Film, M55342K09B10F0, 10EG (2512)
Voltage
Page 25 of 32
Rated voltage = 200V. Derated voltage = 160V.
Max. applied voltage = 1V.
Rated Power=1.0W. Derated power = 600mW.
Pd =100mW.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Ref. Des
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Part Type Derating Parameter
EEE-INST-0002
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P
Rated voltage = 200V. Derated voltage = 160V.
Max. applied voltage = 1V.
Rated Power=1.0W. Derated power = 600mW.
Pd =80mW.
Analysis
P
Ref. Des
P/F
R230
Resistor, Fixed, Film, M55342K09B2E00R, 2K, (2512)
Voltage
P/F
R519,619
Resistor, Fixed, Film, M55342K09B4E99R, 4.99K, (2512)
Voltage
Page 26 of 32
Rated voltage = 200V. Derated voltage = 160V.
Max. applied voltage = 12V.
Rated Power=1.0W. Derated power = 600mW.
Pd =70mW.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 27 of 32
Table 16 - Parts Stress Worksheet, Resistor, Fixed, Film, (1206)
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
R532
Resistor, Fixed, Film, D55342K07B402ER, 402K, (1206)
Voltage
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Rated voltage = 100V. Derated voltage = 60V.
Max. applied voltage = 40V.
Rated Power=250mW. Derated power =
600mW.
Pd =4mW.
Part Type Derating Parameter
EEE-INST-0002
Analysis
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P
P
Ref. Des
P/F
R531,
R553-555,
R631-633,
R653-655
Resistor, Fixed, Film, D55342K07B511ER, 511K, (1206)
Voltage
P/F
Rated voltage = 100V. Derated voltage = 60V.
Max. applied voltage = 40V.
Rated Power=250mW. Derated power =
600mW.
Pd =4.25mW.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 28 of 32
Table 17 - Parts Stress Worksheet, Resistor, Fixed, Jumper 0705
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
R23-24,
R117,R516,
R545,R616,
R645,ZR24,
ZR26,
ZR29-30,
ZR69,ZR72,
ZR99-102
Resistor, Fixed, Film, Chip, ER (RM0705)
Voltage
N/A
Current
0.6 to 70°C,
-1.25%/°C to 118°C
P/F
P
Rated Current=1 Amp. Derated power =
0.5Amp. Id=10mA.
Table 18 - Parts Stress Worksheet, Resistor, Fixed, Film, (0705)
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
R501,R530,
R601,R630,
R50,R122,
R142
Resistor, Fixed, Film, Chip, ER (RM0705) 100-549 Ohm
Voltage
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P/F
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 1.2V
Rated Power=50mW. Derated power = 30mW.
Pd =10mW.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
p
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Ref. Des
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Part Type Derating Parameter
EEE-INST-0002
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
p
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 3.6V
Rated Power=50mW. Derated power = 30mW.
Pd =10mW.
Analysis
P
Ref. Des
P/F
R509,R609,
R508,R608,
R14,R9,R10
Resistor, Fixed, Film, Chip, ER (RM0705) 4.75K-8.25K
Voltage
P/F
R20,R53,R58,
R61,R5,R8,
R21,R25,R28,
R51,R52,R3,
R4,R17,R41,
R48,R83,R552,
R652,R37,R39,
R40,R6467,R71,R75,
R77
Resistor, Fixed, Film, Chip, ER (RM0705) 1.21K-2.74K
Voltage
Page 29 of 32
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 4V
Rated Power=50mW. Derated power = 30mW.
Pd =3.4mW.
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
P
LAT-TD-02655-01
Part Type Derating Parameter
EEE-INST-0002
PSB Parts Stress/Electrical Worst Case Analysis
Analysis
Ref. Des
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Part Type Derating Parameter
EEE-INST-0002
0.8 to 70°C,
-1.67%/°C to 118°C
P
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 10V
Rated Power=50mW. Derated power = 30mW.
Pd =10mW.
Analysis
P
Ref. Des
P/F
R34,R45,
R512,R566,
R612,R666
R667
R27,R42,
R598-599,
R698-699
Resistor, Fixed, Film, Chip, ER (RM0705) 22.1K-49.9K
Voltage
P/F
R85-87,
R502,R518,
R522,
R550-551,
R567,R602,
R618,R622,
R650-651,
ZR63,ZR68,
ZR9598,R19,R231,
R505,R507,
R510,R525,
R605,R607,
R610,R625
Resistor, Fixed, Film, Chip, ER (RM0705) 10K-20K
Voltage
Page 30 of 32
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 10V
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
P
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Part Type Derating Parameter
EEE-INST-0002
Analysis
Power
0.6 to 70°C,
-1.25%/°C to 118°C
Rated Power=50mW. Derated power = 30mW.
Pd =10mW.
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
0.8 to 70°C,
-1.67%/°C to 118°C
Power
0.6 to 70°C,
-1.25%/°C to 118°C
P/F
P
Ref. Des
P/F
R6-7,
R200-204,
R206-207,
R597,R697
Resistor, Fixed, Film, Chip, ER (RM0705) 100K
Voltage
Page 31 of 32
P
Rated voltage = 50V. Derated voltage = 40V.
Max. applied voltage = 26V
Rated Power=50mW. Derated power = 30mW.
Pd =10mW.
P
Table 19 - Parts Stress Worksheet, Thermistor
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
R1-R1
Thermistor
Dissipation constant
P/F
P
Maximum increase to 50
times or 100C,
whichever is less
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****
LAT-TD-02655-01
PSB Parts Stress/Electrical Worst Case Analysis
Page 32 of 32
Table 20 - Parts Stress Worksheet, Connector
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
J1-2
Connector
Voltage
0.25 (sea level)
Rated voltage = 1000V at sea level. Derated voltage = 250V.
Highest applied voltage=140V
P
Maximum Temperature
Rated  25°C
Rated temp. = 125°C. Derated temp. = 100°C
Assumed maximum applied temp. = 60°C baseplate + 10°C
baseplate-to-PWB rise = 70°C.
P
Table 21 - Parts Stress Worksheet, Wire 24AWG PTFE 600Volt
Part Type Derating Parameter
EEE-INST-0002
Analysis
Ref. Des
P/F
N/A
Wire, MIL-W-22759/11
Voltage
0.25 (sea level)
Rated voltage = 600V at sea level. Derated voltage = 250V.
Highest applied voltage=140V
P
Maximum Temperature
Rated  25°C
Rated temp. = 200°C. Derated temp. = 100°C
Assumed maximum applied temp. = 60°C baseplate + 10°C
baseplate-to-PWB rise = 70°C.
P
Hard copies of this document are for REFERENCE ONLY and should not be
considered the latest revision beyond the date of printing.
Form # LAT-TD-****