* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download 3 2 4 1
Control system wikipedia , lookup
Three-phase electric power wikipedia , lookup
Variable-frequency drive wikipedia , lookup
Stepper motor wikipedia , lookup
Electrical substation wikipedia , lookup
History of electric power transmission wikipedia , lookup
Mercury-arc valve wikipedia , lookup
Electrical ballast wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Thermal runaway wikipedia , lookup
Voltage regulator wikipedia , lookup
Distribution management system wikipedia , lookup
Voltage optimisation wikipedia , lookup
Power electronics wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Stray voltage wikipedia , lookup
Semiconductor device wikipedia , lookup
Buck converter wikipedia , lookup
Mains electricity wikipedia , lookup
History of the transistor wikipedia , lookup
Opto-isolator wikipedia , lookup
Surge protector wikipedia , lookup
Current source wikipedia , lookup
BCR400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery 3 voltage and extreme ambient temperature variation 2 4 1 • Low voltage drop of 0.7V Application notes 4 • Stabilizing bias current of NPN transistors 3 and FET's from less than 0.2mA up to BDTIC more than 200mA • Ideal supplement for Sieget and other transistors 1 • also usable as current source up to 5mA 2 EHA07188 • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 Type BCR400W Marking Pin Configuration W4s 1=GND/ENPN 2=Contr/BNPN 3VS Package 4=Rext/CNPN SOT343 (ENPN, BNPN, CNPN are electrodes of a stabilized NPN transistor) Maximum Ratings Parameter Symbol Source voltage VS 18 V Control current IContr. 10 mA Control voltage VContr. 16 V Reverse voltage between all terminals VR 0.5 Total power dissipation, TS = 117 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS ≤ 100 K/W 1Pb-containing package may be available upon special request 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 www.BDTIC.com/infineon 2007-05-29 BCR400W Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. I0 - 20 40 µA Imin - 0.1 - mA DC Characteristics Additional current consumption VS = 3 V Lowest stabilizing current VS = 3 V BDTIC DC Characteristics with stabilized NPN-Transistors VSmin - 1.6 - Vdrop - 0.65 - Change of IC versus hFE hFE = 50 ∆IC/I C - 0.08 - Change of IC versus V S VS = 3 V ∆IC/I C - 0.15 - ∆VS/VS Change of IC versus TA ∆IC/I C - 0.2 - %/K Lowest sufficient battery voltage V IB (NPN) < 0.5mA Voltage drop (VS - VCE) IC = 25 mA ∆h FE / hFE 2 www.BDTIC.com/infineon 2007-05-29 BCR400W Collector current I C = f (hFE) Collector Current I C = f (VS) IC and h FE refer to stabilized NPN Transistor of stabilized NPN Transistor Parameter Rext. (Ω) Parameter Rext. (Ω) 10 3 10 3 mA 2.1 mA 5.9 5.9 10 2 12.4 IC IC 10 2 BDTIC 10 1 10 0 67 67 10 1 10 0 760 760 4.3k 10 -1 0 50 100 150 200 - 250 10 -1 0 350 2 4 6 V 8 hFE 11 VS Voltage drop Vdrop = f (IC ) Collector current I C = f (Rext.) of stabilized NPN Transistor V 10 3 2 mA 1.7 10 2 1.5 IC Vdrop 1.6 1.4 1.3 10 1 1.2 1.1 1 10 0 0.9 0.8 0.7 0.6 0.5 -2 10 10 -1 10 0 10 1 10 2 10 -1 0 10 mA10 3 10 1 10 2 IC 10 3 Ohm10 4 Rext. 3 www.BDTIC.com/infineon 2007-05-29 BCR400W Collector current TA = f (IC) Control current I = f (Rext.) of stabilized NPN Transistor in current source application Parameter: Rext. (Ω) 10 1 10 3 mA 2.2 mA IContr. 6 10 2 IC 26 BDTIC 65 10 1 10 0 290 760 10 0 4.3k 10 -1 -40 -20 0 20 40 60 80 100 120 °C 10 -1 -1 10 160 10 0 10 1 10 2 3 KOhm 10 Rext. TA Control current I = f (TA) Control current I = f (V S) in current source application in current source application 2.2 1.5 mA mA 1.8 1.1 IContr. IContr. 1.2 1 0.9 1.6 1.4 0.8 1.2 0.7 1 0.6 0.8 0.5 0.4 0.6 0.3 0.4 0.2 0.2 0.1 0 -20 0 20 40 60 80 °C 0 0 110 2 4 TA 6 8 V 11 VS 4 www.BDTIC.com/infineon 2007-05-29 BCR400W Total power dissipation Ptot = f (TS ) 400 Note that up to TS=115°C it is not possible to exceed Ptot mW respecting the maximum ratings of VS and IContr. P tot 300 The collector or drain current (respectively) of the stabilized RF transistor does not affect BCR 400 directly, as it provides just the base current. 250 BDTIC 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Typical application for GaAs FET with active bias controller RF IN RF OUT 100 pF 100 k Ω 100 k Ω BCR 400 1 4 2 3 R ext 1 nF - VG +VS 5 EHA07190 www.BDTIC.com/infineon 2007-05-29 BCR400W RF transistor controlled by BCR400 +V S BCR 400 3 R ext. Vdrop 4 Be aware that BCR400 stabilized bias current of transistors in an active control loop ΙC BDTIC 1 2 C1 In order to avoid loop ascillation (hunting), time constants must be chosen adequately, i.e. C1 >= 10 x C2 C2 RF OUT Ι contr. RF IN RF-Transistor EHA07217 RX/TX antenna switch, compatible to control logic and working at wide battery voltage range Antenna λ/ 4 TX RX BCR 400 RX TX R ext = 100 Ω - 220 Ω 1 4 2 3 + VS > 2.7 V EHA07218 6 www.BDTIC.com/infineon 2007-05-29 BCR400W Low voltage reference BCR 400 1 4 BDTIC 2 Red LED +VS 3 V REF EHA07219 Precision timer with BCR400 providing constant charge current +VS BCR 400 3 2 R ext 7 8 4 Timer IC (555) 4 1 3 6 2 1 5 EHA07191 7 www.BDTIC.com/infineon 2007-05-29 Package SOT343 BCR400W Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A BDTIC Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 8 www.BDTIC.com/infineon 2007-05-29 BCR400W Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. BDTIC Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 www.BDTIC.com/infineon 2007-05-29