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DMN30H14DLY N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary RDS(ON) ID TA = +25°C • Low Gate Threshold Voltage • Low Input Capacitance 14Ω @ VGS = 10V 0.21A • Fast Switching Speed 20Ω @ VGS = 4.5V 0.17A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS 300V Features Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Applications • Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Finish annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 • Power management functions • Battery Operated Systems and Solid-State Relays • Mechanical Data • Weight: 0.052 grams (approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc D SOT89 G S Equivalent Circuit Pin-out Top Top View Ordering Information (Note 4) Part Number DMN30H14DLY-13 Notes: Compliance Standard Case SOT89 Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information YWW H4Y = Manufacturer’s Marking H4Y = Marking Code YWW = Date Code Marking Y= Year (ex: 4 = 2014) WW = Week (01 - 53) www.BDTIC.com/DIODES DMN30H14DLY Document number: DS36812 Rev. 2 - 2 1 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN30H14DLY Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCED INFORMATION Symbol Value Units Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±20 V ID 0.21 0.16 A Pulsed Drain Current (10μs pulse, duty cycle ≦1%) IDM 1 A Maximum Body Diode Continuous Current (Note 6) IS 2 A Symbol Value 0.9 2.2 132 55 Units Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Steady State Thermal Characteristics Characteristic (Note 5) (Note 6) (Note 5) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient PD RθJA (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range W °C/W RθJC 9.6 TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Unit Test Condition 300 ⎯ ⎯ V VGS = 0V, ID = 250µA ⎯ ⎯ 1 µA VDS = 240V, VGS = 0V ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250µA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage VGS(th) RDS(ON) VSD 1 ⎯ 3 ⎯ 6 14 ⎯ 6 20 ⎯ 0.7 1.2 Ω VGS = 10V, ID = 0.3A VGS = 4.5V, ID = 0.2A V VGS = 0V, IS = 0.3A pF VDS = 25V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 192V, VGS = 10V, ID = 0.5A nS VDS = 60V, RL =200Ω VGS = 10V, RG = 25Ω DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 96 ⎯ Output Capacitance Coss ⎯ 5.8 ⎯ Reverse Transfer Capacitance Crss ⎯ 3.2 ⎯ Gate Resistance RG ⎯ 12 ⎯ Total Gate Charge Qg ⎯ 4 ⎯ Gate-Source Charge Qgs ⎯ 0.3 ⎯ Gate-Drain Charge Qgd ⎯ 1.9 ⎯ Turn-On Delay Time tD(on) ⎯ 3.3 ⎯ Turn-On Rise Time tr ⎯ 8.6 ⎯ Turn-Off Delay Time tD(off) ⎯ 22 ⎯ Turn-Off Fall Time tf ⎯ 12 ⎯ Reverse Recovery Time trr ⎯ 43 ⎯ nS Reverse Recovery Charge Qrr ⎯ 47 ⎯ nC Notes: VR = 100V, IF=1.0A, di/dt=100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing www.BDTIC.com/DIODES DMN30H14DLY Document number: DS36812 Rev. 2 - 2 2 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN30H14DLY VGS = 20V VGS = 10V VGS =4.0V ID, DRAIN CURRENT (A) 0.6 VDS = 10V VGS = 2.5V VGS = 4.5V 0.5 0.4 0.3 VGS = 2.2V 0.2 0.4 0.3 TA = 150°C 0.2 TA = 125°C 0.1 TA = 85°C TA = 25°C 0.1 T A = -55°C 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 10 12 11 10 VGS = 4.5V 9 8 7 VGS = 10V 6 5 4 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 15 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 0 13 11 9 ID = 300mA 7 5 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.8 20 VGS = 10V 18 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCED INFORMATION 0.7 0.5 VGS = 3.0V ID, DRAIN CURRENT (A) 0.8 TA = 150°C 16 14 TA = 125°C 12 T A = 85°C 10 8 T A = 25°C 6 TA = -55°C 4 2.4 VGS = 10 V ID = 100mA 2.0 1.6 VGS = 5V ID = 100mA 1.2 0.8 2 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature www.BDTIC.com/DIODES DMN30H14DLY Document number: DS36812 Rev. 2 - 2 3 of 6 www.diodes.com March 2014 © Diodes Incorporated 2.0 18 1.9 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 20 16 14 VGS = 10V ID = 500mA 12 10 VGS = 5V ID = 100mA 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 1.8 1.7 1.6 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0.4 TA = 150°C 0.3 TA = 125°C TA = 25°C 0.2 T A = 85°C T A = -55°C 0.1 0 ID = 250µA 1000 0.5 0 ID = 1mA 1.5 0.6 10 ID, DRAIN CURRENT (A) 6 VDS = 192V ID = 0.5A 4 Coss C rss 10 8 Ciss 100 1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION DMN30H14DLY 1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance RDS(on) Limited TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.1 40 DC PW = 10s PW = 1s PW = 100ms 0.01 2 PW = 10ms PW = 1ms PW = 100µs 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 4 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area www.BDTIC.com/DIODES DMN30H14DLY Document number: DS36812 Rev. 2 - 2 4 of 6 www.diodes.com 1000 March 2014 © Diodes Incorporated DMN30H14DLY 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 136°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. R0 D1 .2 00 C E H L B e B1 8° e1 (4 X ) A SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X2 (2x) Y1 Y3 Y4 Y2 Y C X (3x) www.BDTIC.com/DIODES DMN30H14DLY Document number: DS36812 Rev. 2 - 2 5 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN30H14DLY ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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