Download DMN30H14DLY Product Summary Features

DMN30H14DLY
N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCED INFORMATION
Product Summary
RDS(ON)
ID
TA = +25°C
•
Low Gate Threshold Voltage
•
Low Input Capacitance
14Ω @ VGS = 10V
0.21A
•
Fast Switching Speed
20Ω @ VGS = 4.5V
0.17A
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
V(BR)DSS
300V
Features
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
•
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Finish annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208 e3
•
Power management functions
•
Battery Operated Systems and Solid-State Relays
•
Mechanical Data
•
Weight: 0.052 grams (approximate)
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
D
SOT89
G
S
Equivalent Circuit
Pin-out Top
Top View
Ordering Information (Note 4)
Part Number
DMN30H14DLY-13
Notes:
Compliance
Standard
Case
SOT89
Quantity per reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
YWW
H4Y
= Manufacturer’s Marking
H4Y = Marking Code
YWW = Date Code Marking
Y= Year (ex: 4 = 2014)
WW = Week (01 - 53)
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Document number: DS36812 Rev. 2 - 2
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DMN30H14DLY
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCED INFORMATION
Symbol
Value
Units
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±20
V
ID
0.21
0.16
A
Pulsed Drain Current (10μs pulse, duty cycle ≦1%)
IDM
1
A
Maximum Body Diode Continuous Current (Note 6)
IS
2
A
Symbol
Value
0.9
2.2
132
55
Units
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
Steady
State
Thermal Characteristics
Characteristic
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
PD
RθJA
(Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
W
°C/W
RθJC
9.6
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Unit
Test Condition
300
⎯
⎯
V
VGS = 0V, ID = 250µA
⎯
⎯
1
µA
VDS = 240V, VGS = 0V
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250µA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
VGS(th)
RDS(ON)
VSD
1
⎯
3
⎯
6
14
⎯
6
20
⎯
0.7
1.2
Ω
VGS = 10V, ID = 0.3A
VGS = 4.5V, ID = 0.2A
V
VGS = 0V, IS = 0.3A
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 192V, VGS = 10V,
ID = 0.5A
nS
VDS = 60V, RL =200Ω
VGS = 10V, RG = 25Ω
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
⎯
96
⎯
Output Capacitance
Coss
⎯
5.8
⎯
Reverse Transfer Capacitance
Crss
⎯
3.2
⎯
Gate Resistance
RG
⎯
12
⎯
Total Gate Charge
Qg
⎯
4
⎯
Gate-Source Charge
Qgs
⎯
0.3
⎯
Gate-Drain Charge
Qgd
⎯
1.9
⎯
Turn-On Delay Time
tD(on)
⎯
3.3
⎯
Turn-On Rise Time
tr
⎯
8.6
⎯
Turn-Off Delay Time
tD(off)
⎯
22
⎯
Turn-Off Fall Time
tf
⎯
12
⎯
Reverse Recovery Time
trr
⎯
43
⎯
nS
Reverse Recovery Charge
Qrr
⎯
47
⎯
nC
Notes:
VR = 100V, IF=1.0A, di/dt=100A/µs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
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VGS = 20V
VGS = 10V
VGS =4.0V
ID, DRAIN CURRENT (A)
0.6
VDS = 10V
VGS = 2.5V
VGS = 4.5V
0.5
0.4
0.3
VGS = 2.2V
0.2
0.4
0.3
TA = 150°C
0.2
TA = 125°C
0.1
TA = 85°C
TA = 25°C
0.1
T A = -55°C
2
4
6
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
10
12
11
10
VGS = 4.5V
9
8
7
VGS = 10V
6
5
4
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
15
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
0
13
11
9
ID = 300mA
7
5
0
2
4
6
8
10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
2.8
20
VGS = 10V
18
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCED INFORMATION
0.7
0.5
VGS = 3.0V
ID, DRAIN CURRENT (A)
0.8
TA = 150°C
16
14
TA = 125°C
12
T A = 85°C
10
8
T A = 25°C
6
TA = -55°C
4
2.4
VGS = 10 V
ID = 100mA
2.0
1.6
VGS = 5V
ID = 100mA
1.2
0.8
2
0
0
0.1
0.2
0.3
0.4
0.5
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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2.0
18
1.9
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
20
16
14
VGS = 10V
ID = 500mA
12
10
VGS = 5V
ID = 100mA
8
6
4
2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
1.8
1.7
1.6
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
0.4
TA = 150°C
0.3
TA = 125°C
TA = 25°C
0.2
T A = 85°C
T A = -55°C
0.1
0
ID = 250µA
1000
0.5
0
ID = 1mA
1.5
0.6
10
ID, DRAIN CURRENT (A)
6
VDS = 192V
ID = 0.5A
4
Coss
C rss
10
8
Ciss
100
1
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCED INFORMATION
DMN30H14DLY
1
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
RDS(on)
Limited
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.1
40
DC
PW = 10s
PW = 1s
PW = 100ms
0.01
2
PW = 10ms
PW = 1ms
PW = 100µs
0
0
0.5
1
1.5
2
2.5
3
3.5
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
4
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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1
D = 0.9
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCED INFORMATION
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 136°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
R0
D1
.2
00
C
E
H
L
B
e
B1
8°
e1
(4 X
)
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1
1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
X2 (2x)
Y1
Y3
Y4
Y2
Y
C
X (3x)
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ADVANCED INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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