Download MMDT4413 Features Mechanical Data

MMDT4413
COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363
Features
Mechanical Data

Epitaxial Die Construction


Two Internally Isolated NPN/PNP Transistors in One Package

NPN = 4401
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
PNP = 4403

Case: SOT363
Ideal for Medium Power Amplification and Switching

Ultra-Small Surface Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. "Green" Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Finish. Solderable per
MIL-STD-202, Method 208 e3

Weight: 0.006 grams (approximate)
SOT363
Top View
C1
B2
E2
E1
B1
C2
Device Schematic
Top View
Ordering Information (Note 4)
Part Number
MMDT4413-7-F
Notes:
Marking
K13
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
YM
K13
K13= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2012
Z
Mar
3
Apr
4
2013
A
May
5
2014
B
Jun
6
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
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E
Nov
N
Dec
D
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Absolute Maximum Ratings: NPN, 4401 Type (Q1) (@TA = +25°C unless otherwise specified.)
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
IC
600
mA
Collector Current
Absolute Maximum Ratings: PNP, 4403 Type (Q2) (@TA = +25°C unless otherwise specified.)
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
IC
-600
mA
Symbol
Value
Unit
PD
200
mW
RJA
625
°C/W
TJ, TSTG
-65 to +150
°C
Collector Current
Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5) Total Device
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Note:
5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
Pd, POWER DISSIPATION (mW)
250
200
150
100
50
0
0
40
80
120
160
200
TA, AMBIENT TEMPERATURE (° C)
Fig. 1, Power Derating Curve (Total Device)
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Electrical Characteristics, NPN 4401 Section
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
60

V
IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
40

V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6.0

V
IE = 100 µA, IC = 0
ICEX

100
nA
VCE = 35V, VEB(OFF) = 0.4V
IBL

100
nA
VCE = 35V, VEB(OFF) = 0.4V
hFE
20
40
80
100
40



300


IC = 100µA,
IC = 1.0mA,
IC = 10mA,
IC = 150mA,
IC = 500mA,
Collector-Emitter Saturation Voltage
VCE(SAT)

0.40
0.75
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75

0.95
1.2
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Ccb

6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb

30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
k
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
40
500

Output Admittance
hoe
1.0
30
µS
fT
250

MHz
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 6)
DC Current Gain
VCE =
VCE =
VCE =
VCE =
VCE =
1.0V
1.0V
1.0V
1.0V
2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
td

15
ns
Rise Time
tr

20
ns
Storage Time
ts

225
ns
Fall Time
tf

30
ns
Delay Time
Note:
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
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VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0
CAPACITANCE (pF)
20
10
5.0
1.0
1.0
10
REVERSE VOLTS (V)
Fig. 1 Typical Capacitance (4401)
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
50
0.01
0.1
1
10
100
IB BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region (4401)
0.5
1,000
TA = 125°C
100
TA = -25°C
IC
IB = 10
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
1.8
T A = +25°C
10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
T A = -50°C
1
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current (4401)
0.1
1
1,000
VCE = 5V
0.9
TA = -50°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401)
fT, GAIN BANDWIDTH PRODUCT (MHz)
VBE(ON), BASE EMITTER VOLTAGE (V)
1.0
0
VCE = 5V
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Base Emitter Voltage vs. Collector Current (4401)
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Gain Bandwidth Product vs. Collector Current (4401)
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Electrical Characteristics, PNP 4403 Section
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
-40

V
IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
-40

V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-5.0

V
IE = -100µA, IC = 0
ICEX

-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL

-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20



300


IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -150mA, VCE =
IC = -500mA, VCE =
Collector-Emitter Saturation Voltage
VCE(SAT)

-0.40
-0.75
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75

-0.95
-1.30
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Output Capacitance
Ccb

8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb

30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
k
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
60
500

Output Admittance
hoe
1.0
100
S
fT
200

MHz
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 6)
DC Current Gain
-1.0V
-1.0V
-1.0V
-2.0V
-2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
SWITCHING CHARACTERISTICS
td

15
ns
Rise Time
tr

20
ns
Storage Time
ts

225
ns
Fall Time
tf

30
ns
Delay Time
Note:
VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
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1.6
VCE COLLECTOR-EMITTER VOLTAGE (V)
30
20
CAPACITANCE (pF)
Cibo
10
5.0
Cobo
1.0
-0.1
-1.0
-10
REVERSE VOLTS (V)
Fig. 7 Typical Capacitance (4403)
1.0
0.8
0.6
0.4
0.2
0
0.001
1
100
0.01
0.1
10
IB, BASE CURRENT (mA)
Fig. 8 Typical Collector Saturation Region (4403)
VBE(ON), BASE EMITTER VOLTAGE (V)
1,000
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = 50°C
0
0.8
TA = -50°C
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.2
0.1
1
1,000
10
100
1
IC, COLLECTOR CURRENT (mA)
Fig. 10 Base-Emitter Voltage vs. Collector Current (4403)
1,000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1
VCE = 5V
0.9
0.3
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403)
hFE, DC CURRENT GAIN
1.2
-30
0.5
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.4
VCE = 5V
100
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 11 DC Current Gain vs. Collector Current (4403)
1
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 12 Gain Bandwidth Product vs. Collector Current (4403)
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D
0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J
0
0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
0°
8°

All Dimensions in mm
B C
H
K
M
J
D
F
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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