Download BFR460L3

BFR460L3
Low Noise Silicon Bipolar RF Transistor
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value 1500V (HBM)
• High fT of 22 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
BDTIC
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR460L3
Marking
AB
Pin Configuration
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA = 25 °C
4.5
TA = -55 °C
4.2
Collector-emitter voltage
VCES
15
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
1.5
Collector current
IC
50
Base current
IB
5
Total power dissipation1)
Ptot
200
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
mA
TS ≤ 108°C
1T
S is
-55 ... 150
measured on the collector lead at the soldering point to the pcb
1
www.BDTIC.com/infineon
2013-09-13
BFR460L3
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
210
K/W
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
4.5
5.8
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, I B = 0
BDTIC
Collector-emitter cutoff current
ICES
-
-
10
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
90
120
160
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
DC current gain
-
IC = 20 mA, VCE = 3 V, pulse measured
1For
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2
www.BDTIC.com/infineon
2013-09-13
BFR460L3
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
16
22
-
Ccb
-
0.28
0.45
Cce
-
0.14
-
Ceb
-
0.55
-
AC Characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 30 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
BDTIC
VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
-
1.1
-
f = 3 GHz
-
1.35
-
Gms
-
16.0
-
dB
Gma
-
11
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
Power gain, maximum available1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 3 GHz
|S21e|2
Transducer gain
dB
IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1,8 GHz
-
14
-
f = 3 GHz
-
10
-
IP3
-
27
-
P-1dB
-
11.5
-
Third order intercept point at output2)
dBm
VCE = 3 V, IC = 20 mA, f = 1.8 GHz
1dB compression point at output
IC = 20 mA, VCE = 3 V, f = 1.8 GHz
1G
1/2
ma = |S21 / S12| (k-(k²-1) ), G ms = S21 / S12
2IP3 value depends on termination of all intermodulation
frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
www.BDTIC.com/infineon
2013-09-13
BFR460L3
Total power dissipation P tot = ƒ(TS)
Collector-base capacitance Ccb = ƒ(VCB )
f = 1MHz
240
0.8
pF
mW
160
Ccb
P tot
0.6
120
0.5
0.4
BDTIC
0.3
80
0.2
40
0.1
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
2
4
6
8
10
V
TS
14
VCB
Transition frequency fT= ƒ(IC)
Power gain Gma, Gms, |S21|2 = ƒ (f)
f = 1 GHz
VCE = 3 V, IC = 20 mA
VCE = parameter in V
50
26
GHz
dB
2 to 4V
1V
22
40
20
35
16
G
fT
18
30
14
25
12
20
10
15
Gms
|S21|²
8
Gma
10
6
5
4
2
0
5
10
15
20
25
30
35 mA
0
0
45
1
2
3
IC
4
GHz
6
f
4
www.BDTIC.com/infineon
2013-09-13
BFR460L3
Power gain Gma, Gms = ƒ (IC)
Power gain Gma, Gms = ƒ (VCE )
VCE = 3V
IC = 20 mA
f = parameter in GHz
f = parameter in GHz
24
24
dB
0.9
dB
0.9
20
20
18
1.8
16
16
1.8
14
2.4
12
3
G
G
18
14
2.4
12
3
10
4
8
5
6
6
BDTIC
10
4
5
8
4
6
6
4
0
5
10
15
20
25
30
mA
2
0
0.5
40
1
1.5
2
2.5
IC
3
3.5
V
4.5
VCE
5
www.BDTIC.com/infineon
2013-09-13
BFR460L3
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFR460L3 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 6 GHz using typical devices.
The BFR460L3 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
BDTIC
6
www.BDTIC.com/infineon
2013-09-13
Package TSLP-3-1
BFR460L3
BDTIC
7
www.BDTIC.com/infineon
2013-09-13
BFR460L3
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
8
www.BDTIC.com/infineon
2013-09-13