Download FPD3000SOT89CE LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Features

FPD3000SOT89CE
FPD3000SOT8
9CELow-Noise
High-Linearity
Packaged
pHEMT
LOW-NOISE HIGH-LINEARITY PACKAGED
pHEMT
Package: SOT89
Product Description
Features
The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25m x 3000m
Schottky barrier gate, defined by high-resolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.





Optimum Technology
Matching® Applied

GaAs HBT
GaAs MESFET
45% Power-Added Efficiency
FPD3000SOT89CE: RoHS
Compliant (Directive
2002/95/EC)
Applications
InGaP HBT
SiGe BiCMOS

Si BiCMOS

30dBm Output Power (P1dB)
13dB Small-Signal Gain
(SSG)
1.3dB Noise Figure
45dBm OIP3
SiGe HBT
GaAs pHEMT

Si CMOS
Si BJT

GaN HEMT
InP HBT
Drivers or Output Stages in
PCS/Cellular Base Station
Transmitter Amplifiers
High Intercept-point LNAs
WLL, WLAN, and Other Types
of Wireless Infrastructure
Systems
RF MEMS
LDMOS
Parameter
Min.
P1dB Gain Compression
Small-Signal Gain (SSG)
PAE
Noise Figure (NF)
29
11.5
OIP3 (15dB to 5dB below P1dB)
Saturated Drain-Source Current (IDSS)
Maximum Drain-Source Current
(IMAX)
Transconductance (GM)
Gate-Source Leakage Current (IGSO)
Pinch-Off Voltage (VP)
Gate-Source Breakdown Voltage
(VBDGS)
750
|0.7|
|12|
Specification
Typ.
Max.
Unit
30
13
45
1.3
0.9
dBm
dB
%
dB
dB
42
45
930
1.5
dBm
mA
mA
mA
800
2
|1.0
|16|
1100
20
|1.3|
ms
A
V
V
Condition
VDS =5V, IDS =50% IDSS
VDS =5V, IDS =50% IDSS
VDS =5V, IDS =50% IDSS, POUT =P1dB
VDS =5V, IDS =50% IDSS; VDS =5V, IDS =25% IDSS
VDS =5V, IDS =25% IDSS. Matched for optimal
power.
Matched for best IP3
VDS =1.3V, VGS =0V
VDS =1.3V, VGS 0V
VDS =1.3V, VGS +1V
VDS =1.3V, VGS =0V
VGS =-5V
VDS =1.3V, IDS =3mA
IGS =3mA
|12|
|16|
V
IDS =3mA
Gate-Drain Breakdown Voltage
(VBDGD)
Thermal Resistivity (JC) *
35
C/W
*Note: TAMBIENT =22°C, RF specifications measured at f=1850GHz using CW signal (except as noted).
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111103
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 9
FPD3000SOT89CE
Absolute Maximum Ratings1
Rating
Unit
Drain-Source Voltage (VDS)
(-3V<VGS <-0.5V)
Parameter
8
V
Gate-Source Voltage (VGS)
(0V<VDS <+8V)
-3
V
Drain-Source Current (IDS)
(For VDS <2V)
IDSS
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Gate Current (IG) (Forward or reverse)
30
mA
RF Input Power (PIN)
(Under any acceptable bias state)
600
mW
Channel Operating Temperature (TCH)
(Under any acceptable bias state)
175
°C
-40 to 150
°C
2
Storage Temperature (TSTG)
(Non-Operating Storage)
Total Power Dissipation (PTOT)3, 4, 5
Gain Compression
(Under bias conditions)
3.5
W
5
dB
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Simultaneous Combination of Limits6
(2 or more max. limits)
Notes:
1T
AMBIENT =22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
2
Max. RF input limit must be further limited if input VSWR>2.5:1.
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously.
4
Total Power Dissipation (PTOT) defined as (PDC +PIN)–POUT, where PDC: DC Bias
Power, PIN: RF Input Power, POUT: RF Output Power.
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT =3.5-(0.028W/°C)xTPACK, where TPACK =source tab lead temperature
above 22°C. (Coefficient of de-rating formula is Thermal Conductivity.)
Exampe: For a 65°C carrier temperature: PTOT =3.5W-(0.028x(65-22))=2.3W
Biasing Guidelines
Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is
applied before drain bias.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode
devices.
For standard Class A operation, an operating point of 50% of IDSS is recommended. A small amount of RF gain expansion prior
to the onset of compression is normal for this operating point. A class A/B Bias of 25% to 33% of IDSS to achieve better OIP3
and Noise Figure performance is suggested.
2 of 9
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111103
FPD3000SOT89CE
Typical Tuned RF Performance
Power Tr ans fer Cha ra cte ris tic
Dr ain Effic ie ncy a nd P AE
3 2 .0
3. 25
3 1 .0
2. 75
Po ut (dBm )
Co mp P oi nt
45%
40 %
40%
35 %
35%
30 %
30%
25 %
25%
1. 75
2 8 .0
1. 25
2 7 .0
0. 75
20 %
20%
PAE
Eff.
15 %
15%
0. 25
10 %
10%
2 4 .0
-0. 25
5%
2 3 .0
-0. 75
0%
2 6 .0
2 5 .0
1 1 .0
1 3. 0
1 5. 0
1 7. 0
1 9. 0
2 1. 0
5%
0%
1 2. 0
2 3. 0
Drain E ffi cien cy (% )
2 9 .0
P AE (% )
2. 25
Gai n Co mp ressio n, (dB)
O utput Po wer (d Bm )
3 0 .0
45 %
1 3.0
14 .0
1 5. 0
16 .0
17 .0
1 8. 0
19 .0
20 .0
2 1. 0
22 .0
I npu t P ower (dBm )
Inp ut P ow er (dBm )
Note: Typical power and efficiency is shown above. The devices were biased nominally at VDS =5V, IDS =50% of IDSS, at a test
frequency of 1.85GHz. They were tuned (input and output tuning) for maximum output power at 1dB gain compression.
Typical Intermodulation performance
VDS = 5V, IDS = 50% IDSS at f = 1.85GHz
FPD3000SOT89 5V / 50%IDSS
35
-40.00
21
-48.00
17
-50.00
-52.00
15
-54.00
-56.00
13
S21
MSG
-46.00
25
&
Output Power (dBm)
19
3rd Order IM Products (dBc)
-44.00
20
Mag S21
3rds (dBc)
MSG
30
-42.00
Pout (dBm)
15
10
5
-58.00
-60.00
11
0.7
1.7
2.8
3.8
4.7
5.7
6.8
7.8
8.8
9.8
0
0.5
Inout Power (dBm)
1.5
2.5
3.5
4.5
5.5
Frequency (GHz)
6.5
7.5
8
Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB +14dB. This IMD
enhancement is affected by the quiescent bias and the matching applied to the device.
Typical I-V Characteristics
DC IV Curves FPD3000SOT89
1.2
Drain-Source Voltage (A)
1.0
0.8
VG=-1.50V
VG=-1.25V
VG=-1.00V
0.6
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
0.4
Note: The recommended method for measuring IDSS, or
any particular IDS, is to set the Drain-Source voltage (VDS)
to 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the IV curves presented here). Setting the VDS >1.3V will generally cause errors in the current measurements, even in stabilized circuits.
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
DS111103
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 9
FPD3000SOT89CE
Typical Output Plane Power Contours
(VDS =5V, IDS =50% IDSS)
0.
6
Swp M ax
143
1.
0
0.
8
0.
4.
0
5.
24d Bm
25dB m
26d Bm
0.
2
0
27dB m
0.
4
28d Bm
10.
0.
8
1.
0
2.
0
3.
0
10
.0
4.5 .
0 0
0.
0.
229dBm4
0
29dBm
4. 0
0.
6
0.
8
5.0
10 .0
1.
0
2.
0
10
.0
3 . 4. 5.
0
0 0
30dBm
10 0
30dBm
-
3.0
24dBm
25dBm
26dBm
27dBm
28dBm
0.2
0.
6
2.
0
0. 4
3.
0.
Swp Max
131
1.
0
0.
8
0.
6
2.
0
-1 0.0
-0.2
- 5 0
-5.0
-4 .0
3 0
0.
-3. 0
-0.4
2.
0.
0.
6
Swp M in
1
1.
2.
0
0.
8
Swp Min
1
1.
0
1850 MHz
900 MHz
Contours swept with a constant input power, set
so that optimum P1dB is achieved at the point of
output match.
Contours swept with a constant input power, set
so that optimum P1dB is achieved at the point of
output match.
Input (Source plane) ?s:
0.70 ? -165.5º
0.17 - j0.12 (normalized)
8.5 – j6.0 O
Input (Source plane) ?s:
0.78 ? -147.4º
0.13 - j0.29 (normalized)
6.5 – j14.5 O
Nominal IP3 performance is obtained with this
input plane match, and the output plane match as
shown.
Nominal IP3 performance is obtained with this
input plane match, and the output plane match as
shown.
Typical Scattering Parameters
(50 System)
FPD3000SOT89 5V / 50%IDSS
0 .8
2.
0
2.
0
4 GHz
0.4
3.5 GHz
4
3.0
3 GHz
6 G Hz
7 GHz
0
3.
0
4.
5.0
0.
2
2 GHz
10.0
5.0
4.0
3.0
1 G Hz
10 .0
2.0
10
.0
4. 5.
0 0
1.0
3.
0
0.8
2.
0
0.6
1.
0
0.4
0.
8
0.2
0.
6
0
0.
4
-10.0
-0
.2
-4.0
4 of 9
.
-2
0
S22
-1.0
Swp Min
0.5GHz
-0. 8
1.
0
.4
.6
0.
8
-0
-0
0.
6
2.
0
0
S11
0
-3.0
-0.4
-3
.
-5 .0
.0
-0.2
-1 0. 0
1 GHz
0
-4
.
0.
2
5.
3 G Hz
10.0
2 GHz
1.5 GHz
5 G Hz
4 G Hz
4.0
2.50.2GHz
0
Swp M ax
8GHz
6
7 GHz
0.
6 GHz
-5
5 GHz
Swp Max
8GHz
1.
0
0.
0.
6
0.
8
1.0
FPD3000SOT89 5V / 50%IDSS
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Swp M in
0.5G Hz
DS111103
FPD3000SOT89CE
Reference Design (900MHz)
Parameter
Typ.
Unit
900
18
30
MHz
dBm
dBm
OIP3
41
dB
NF
S11
S22
VD
1.2
-15
-7
5
dB
dB
dB
V
Frequency
Gain
P1dB
VG
-0.4 to -0.6
V
ID
400
mA
Note: OIP3 measured at POUT of 19dBm per tone.
Board Layout
33pF
0.01uF
33pF
R1
Lg
33pF
C1
FPD3000SOT89 EVAL Board -Vg
Schematic
0.01uF
@ 900MHz
Vd
33pF
RF IN
C1
DS111103
L1
47 nH
33pF
47 nH
C2
33pF
L2
Component
0.01uF
100 Ohm
33pF
C3
C2
1.0uF
33pF
C3
RF OUT
L2
+ 1.0uF
+
Ld
Q1
L1
0.01uF
Lg
Ld
L1
L2
C1
C2
C3
R1
Value
Description
47nH
47nH
5.6nH
4.7nH
3.9pF
7.5pF
6.8pF
100
LL1608 Toko chip
LL1608 Toko chip
LL1605 Toko chip
LL1605 Toko chip
ATC 600S chip capacitor
ATC 600S chip capacitor
ATC 600S chip capacitor
0603 Vishay chip resistor
Eval board material is 31mil thick FR4 with 1/2oz Cu on
both sides.
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 9
FPD3000SOT89CE
Reference Design (1.85GHz)
Parameter
Typ.
Unit
1.85
12
31
GHz
dBm
dBm
OIP3
43
dB
NF
S11
S22
VD
0.9
-25
-5
5
dB
dB
dB
V
Frequency
Gain
P1dB
VG
-0.4 to -0.6
V
ID
400
mA
Note: OIP3 measured at POUT of 19dBm per tone.
Board Layout
Vg
Vd
33pF
33pF
R1
0.01uF
C3
33pF
P1
P2
C2
L1
FPD3000SOT89 EVAL Board -Vg
Schematic
@ 1.85GHz
Vd
1.0uF
33pF
0.01uF
RF IN
L1
6 of 9
27 nH
33pF
27 nH
33pF
C1
C2
L2
Component
0.01uF
20 Ohm
33pF
+ 1.0uF
+
Ld
Lg
Q1
C1
33pF
0.01uF
C3
RF OUT
L2
Lg
Ld
L1
L2
C1
C2
C3
R1
Value
Description
27nH
27nH
2.2nH
4.7nH
2.4pF
2.0pF
1.8pF
20
LL1608 Toko chip
LL1608 Toko chip
LL1605 Toko chip
LL1605 Toko chip
ATC 600S chip capacitor
ATC 600S chip capacitor
ATC 600S chip capacitor
0603 Vishay chip resistor
Eval board material is 31mil thick FR4 with 1/2oz Cu on
both sides.
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111103
FPD3000SOT89CE
S-Parameters
(Biased @ 5V, 50% IDSS)
FREQ[GHz]
0.050
0.300
0.550
0.800
1.050
1.300
1.550
1.800
2.050
2.300
2.550
2.800
3.050
3.300
3.550
3.800
4.050
4.300
4.550
4.800
5.050
5.300
5.550
5.800
6.050
6.300
6.550
6.800
7.050
7.300
7.550
7.800
8.050
DS111103
S11m
0.946
0.824
0.761
0.779
0.771
0.775
0.779
0.775
0.778
0.780
0.777
0.778
0.782
0.784
0.785
0.790
0.790
0.806
0.800
0.794
0.800
0.801
0.805
0.806
0.808
0.810
0.811
0.814
0.818
0.821
0.829
0.831
0.839
S11a
-24.3
-97.5
-132.1
-150.7
-163.6
-173.0
178.6
171.1
164.5
158.1
152.3
146.8
142.6
137.7
133.2
129.0
124.8
120.7
115.1
111.6
107.0
102.6
98.0
93.8
89.5
85.4
81.3
77.4
73.2
69.0
64.8
60.2
55.5
S21m
36.120
19.282
12.243
8.992
7.020
5.802
4.934
4.306
3.834
3.444
3.131
2.878
2.636
2.459
2.286
2.146
2.017
1.896
1.821
1.728
1.648
1.576
1.516
1.461
1.411
1.360
1.317
1.272
1.232
1.189
1.149
1.108
1.066
S21a
159.0
120.3
103.2
91.8
84.0
76.3
70.1
63.6
57.8
52.0
46.1
40.4
34.9
29.4
24.0
18.7
13.3
9.0
3.4
-1.4
-6.7
-11.5
-16.5
-21.4
-26.2
-31.2
-36.3
-41.2
-46.3
-51.3
-56.4
-61.4
-66.3
S12m
0.006
0.027
0.037
0.043
0.048
0.054
0.059
0.064
0.069
0.074
0.080
0.085
0.088
0.093
0.097
0.101
0.105
0.106
0.113
0.117
0.121
0.123
0.128
0.132
0.136
0.139
0.143
0.146
0.151
0.153
0.157
0.159
0.160
S12a
79.8
56.8
45.6
40.5
38.3
35.9
34.7
31.7
29.8
27.5
24.3
22.1
19.1
15.6
12.7
9.6
5.7
4.5
1.5
-2.0
-5.4
-8.6
-11.8
-14.7
-18.0
-21.3
-24.6
-28.2
-31.7
-35.1
-38.8
-42.5
-46.5
S22m
0.175
0.384
0.478
0.507
0.522
0.529
0.528
0.532
0.529
0.531
0.531
0.534
0.537
0.544
0.545
0.551
0.555
0.575
0.574
0.575
0.577
0.580
0.583
0.583
0.586
0.588
0.593
0.592
0.601
0.607
0.614
0.623
0.634
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
S22a
-145.5
-150.1
-165.4
-172.3
-179.1
176.4
171.9
167.4
163.2
158.7
154.2
149.1
143.6
138.2
132.9
127.8
123.2
118.8
113.3
109.7
105.9
102.6
98.7
95.2
91.1
86.9
82.4
77.7
73.0
68.2
63.5
59.3
55.3
7 of 9
FPD3000SOT89CE
Part Identification
Package Outline
Tape Dimensions and Part Orientation
Tape and reel information on this part is in accordance with EIA-481-1 except where exceptions are identified
Device PCB Footprint
Units in inches
8 of 9
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111103
FPD3000SOT89CE
Preferred Assembly Instructions
This package is compatible with both lead-free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020.
The maximum package temperature should not exceed 260°C.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling,
assembly, and testing.
ESD Rating
These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114.
MSL Rating
The device has an MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per the Pb-free
solder profile defined within IPC/JEDEC J-STD-020, Moisture / Reflow sensitivity classification for non-hermetic solid state surface mount devices.
Application Notes and Design Data
Application Notes and design data including S-parameters, noise paramters, and device model are available on request and
from www.rfmd.com.
Reliability
A MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
DS111103
Ordering Code
Description
FPD3000SOT89CESQ
Sample bad with 25 pieces
FPD3000SOT89CESR
7" Reel with 100 pieces
FPD3000SOT89CE
7" Reel with 1000 pieces
FPD3000SOT89PCK
1.85GHz PCBA with 5-piece sample bag
www.BDTIC.com/RFMD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 9