* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download RF3931D RF OUT VD RF IN
Utility frequency wikipedia , lookup
History of electric power transmission wikipedia , lookup
Variable-frequency drive wikipedia , lookup
Power over Ethernet wikipedia , lookup
Control system wikipedia , lookup
Power engineering wikipedia , lookup
Stray voltage wikipedia , lookup
Power inverter wikipedia , lookup
Pulse-width modulation wikipedia , lookup
Audio power wikipedia , lookup
Voltage optimisation wikipedia , lookup
Thermal runaway wikipedia , lookup
Alternating current wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Buck converter wikipedia , lookup
Mains electricity wikipedia , lookup
Regenerative circuit wikipedia , lookup
Power electronics wikipedia , lookup
Switched-mode power supply wikipedia , lookup
RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB •Drain Efficiency 65% at P3dB Large Signal Models Available Active Area Periphery: 6.6mm Chip Dimensions: 0.96mmx1.33mmx0.10mm Applications Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical GND Functional Block Diagram Product Description The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3931D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3931D is an unmatched 0.5m gate, GaN transistor die suitable for many applications with >46.5dBm saturated power, >63% drain efficiency, and >14dB small signal gain at 2GHz. Ordering Information RF3931D 30W GaN on SiC Power Amplifier Die Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110520 www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 9 RF3931D Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 23 mA Operational Voltage 50 V -55 to +125 °C 200 °C Storage Temperature Range Operating Junction Temperature (TJ) Human Body Model (based on packaged device) Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3E+06 hours Thermal Resistance, RTH (junction to case)** measured at TC = 85°C, DC bias only 3.6 °C/W Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. * MTTF - Median Time to Failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. ** Thermal resistance assumes AuSn die attach on 1.5mm thick CPC carrier similar to Kyocera A1933. User will need to define this specification in the final application and ensure bias conditions satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE to maintain maximum operating junction temperature and MTTF. Specification Min. Typ. Max. Parameter Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) 24 Gate Voltage (VGSQ) -4.5 Drain Bias Current 48 -3.5 -2.5 130 Frequency of Operation DC V V mA 4000 MHz Die Capacitance from Packaged Capacitance Measurements Package Capacitance Removed During Calibration CRSS 4 pF VG= -8V, VD = 0V CISS 17 pF VG= -8V, VD = 0V COSS 12 pF VG= -8V, VD = 0V DC Functional Test IG (on) - Forward Bias Diode Gate Current IG (off) - Gate Leakage 3 mA VG =1.1V, VD =0V 0.2 mA VG =-8V, VD =0V ID (off) - Drain Leakage 0.2 mA VG =-8V, VD =0V ID (off) - 48V Drain Leakage 2.0 mA VG =-8V, VD =48V 4.0 mA VG =-8V, VD =150V -2.5 V VD=48V, ID =6mA V VG = 0V, ID =1.0A ID (off) - 150V Drain Leakage VGS (th) - Threshold Voltage -4.8 VDS (on) - Drain Voltage at high current -3.4 0.84 RF Typical Performance of Packaged Die VGS (q) -3.5 V Small Signal Gain 20 dB CW, f=900MHz Small Signal Gain 14 dB CW, f=2140MHz 2 of 9 Vd=48V, ID = 130 mA www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110520 RF3931D Specification Min. Typ. Max. Parameter Unit RF Typical Performance of Packaged Die (continued) Condition [1] Output Power at P3dB 47 dBm Output Power at P3dB 46.5 dBm CW, f=900MHz CW, f=2140MHz Drain Efficiency at P3dB 65 % CW, f=900MHz Drain Efficiency at P3dB 63 % CW, f=2140MHz [1] Test Conditions: CW Operation, VDSQ=48V, IDQ=130mA, T=25ºC, in Standard Tuned Test Circuit DS110520 www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 9 RF3931D Typical Performance Non-internally matched package die in tuned circuit (T=25°C, unless noted) Efficiency vs. Output Power (f = 2140MHz) Gain vs. Output Power (f = 2140MHz) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA) 18 70 17 60 Drain Efficiency (%) 16 14 13 Gain 25C 11 30 20 Gain 85C 12 Eff -40C 40 10 Gain -40C 0 10 30 32 34 36 38 40 42 44 30 46 34 32 36 46 44 (Vd = 48V, Idq = 130mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA) 0 16 -2 15 IRL 85C -5 Fixed tuned test circuit -7 IRL 25C 14 -9 IRL -40C 13 -11 12 -13 11 -15 10 -17 -14 9 -19 -16 8 -18 7 -4 -6 -8 Gain (dB) IRL, Input Return Loss (dB) 42 40 Small Signal Performance vs. Frequency, Pout = 30dBm Input Return Loss vs. Output Power (f = 2140MHz) -10 -12 -20 -23 32 34 36 38 40 42 44 46 -25 2080 2110 2140 Output Power (dBm) (CW, Vd = 48V, Idq = 130mA) 15 -5 Fixed tuned test circuit -11 11 -13 10 -15 9 -17 8 -19 7 -21 IRL 6 Drain Efficiency (%) 12 Fixed tuned test circuit 58 Input Return Loss (dB) -9 56 54 Eff 52 -23 5 2080 60 -7 13 Gain 2200 Drain Efficiency vs. Frequency, Pout = 46dBm (CW, Vd = 48V, Idq = 130mA) 14 2170 Frequency (MHz) Gain/IRL vs. Frequency, Pout = 46dBm -25 2100 2120 2140 2160 Frequency (MHz) 4 of 9 -21 IRL Gain 6 30 Gain (dB) 38 Output Power (dBm) Output Power (dBm) Input Return Loss (dB) Gain (dB) 15 Eff 85C Eff 25C 50 2180 2200 50 2080 2100 2120 2140 2160 2180 2200 Frequency (MHz) www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110520 RF3931D Gain/ Efficiency vs. Pout, f = 2140MHz Gain/ Efficiency vs. Pout, f = 2140MHz 16 70 14 60 14 60 12 50 12 50 10 40 10 40 8 30 8 30 6 20 6 Gain 20 10 4 Drain Eff 10 0 2 Gain ain (dB) Gain Drain Eff 4 2 29 31 33 35 37 39 41 43 45 47 0 30 Pout, Output Power (dBm) Drain Efficiency (%) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA) 70 Drain Efficiency (%) Gain (dB) (CW, Vd = 48V, Idq = 130mA) 16 32 34 36 38 40 42 44 46 P t O Pout, Output PPower (dB (dBm)) IMD3 vs. Pout Gain vs. Pout (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz) (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz) 18 65mA 100mA 130mA 260mA 390mA -15 -20 -25 17 16 15 Gain (dB) IMD3, Intermodulaon Distoron (dBc) -10 -30 14 -35 13 -40 12 -45 11 65mA 100mA 130 A 130mA 260mA 390mA 10 -50 1 10 1 100 10 100 Pout, Output Power (W-PEP) Pout, Output Power (W-PEP) IMD vs. Output Power (Vd = 48V, Idq = 130mA, f1 = 2139.5MHz, f2 = 2140.5MHz) 0 Intermodulaon Distoron (IMD - dBc) -IMD3 -10 IMD3 -IMD5 IMD5 -IMD7 IMD7 -20 -30 -40 -50 -60 -70 1 1 0 10 100 100 Pout, Output Power (W- PEP) DS110520 www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 9 RF3931D Gain/IRL vs. Frequency, Pout = 47dBm Small Signal Performance vs. Frequency, Pout = 30dBm (CW, Vd = 48V, Idq = 130mA) (Vd = 48V, Idq = 130mA) 21 -2 20 -2 -3 19 -3 18 -4 17 -5 18 -4 17 -5 16 -6 15 Gain -7 IRL 14 13 12 880 890 900 910 0 Fixed tuned test circuit 16 -6 15 Gain -7 IRL -8 14 -8 -9 13 -9 -10 12 -10 880 920 890 900 910 920 Frequency (MHz) Frequency (MHz) G i / Efficiency Gain/ Effii vs. Pout, P t f = 900MHz 900MH Drain Efficiency vs. Frequency, Pout = 47dBm (CW, Vd = 48V, Idq = 130mA) (CW, Vd = 48V, Idq = 130mA) 70 Fixed tuned test circuit 68 22 70 21 60 20 50 19 66 Gain (dB) B) Drain Efficiency (%) -1 64 40 18 30 17 Eff 16 Drain Eff 15 60 20 Gain 62 10 14 880 890 900 910 Frequency (MHz) 6 of 9 920 Drain Efficiency ncy (%) Gain (dB) 19 -1 Input Return Loss (dB) 20 22 Gain (dB) Fixed tuned test circuit 21 0 Input ut Return Loss ss (dB) 22 0 29 31 33 35 37 39 41 43 45 47 Pout, Output Power (dBm) www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110520 RF3931D Die Drawing All dimensions in mm External dimension tolerance due to dicing process development. Bond Pad Key G = Gate S = Source D = Drain Die thickness = 0.101mm Die backside metal = Au Bias Instruction for RF3931D Die ESD Sensitive Material. Please use proper ESD precautions when handling devices die. Die must be mounted with minimal die attach voids for proper thermal dissipation. This device is a depletion mode HEMT and must have gate voltage applied for pinched off prior to applying drain voltage. 1. Mount device on carrier or package with minimal die attach voiding and applying proper heat removal techniques. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -8V to VG. 4. Apply 48V to VD. 5. Increase VG until drain current reaches desired bias point. 6. Apply RF input. DS110520 www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 9 RF3931D Assembly Notes Die Storage • Individual bare die should be held in appropriately sized ESD waffle trays or ESD GEL packs. • Die should be stored in CDA/N2 cabinets and in a controlled temperature and humidity environment. Die Handling • Die should only be picked using an auto or semi-automated pick system and an appropriate pick tool. • Pick parameters will need to be carefully defined so not to cause damage to either the top or bottom die surface. • GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. • RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. Caution: The use of inappropriate or worn-out ejector needle and improper ejection parameter settings can cause die backside tool marks or micro-cracks that can eventually lead to die cracking. Die Attach There are two commonly applied die attach processes: adhesive die attach and eutectic die attach. Both processes use special equipment and tooling to mount the die. EUTECTIC ATTACH • • • • • • • • • 80/20 AuSn preform, 0.5 - 1mil thickness, made from virgin melt gold. Pulsed heat or die scrub attach process using auto / semi-automatic equipment. Attach process carried out in an inert atmosphere. Custom die pick collets are required that match the outline of the die and the specific process employed using either pulsed, fixed heat, or scrub. Maximum temperature during die attach should be no greater than 320 C and for less than 30 seconds. Key parameters that need to be considered include: die placement force, die scrub profile and heat profile. Minimal amount of voiding is desired to ensure maximum heat transfer to the carrier and no voids should be present under the active area of the die. Voiding can be measured using X-ray or Acoustic microscopy. The acceptable level of voiding should be determined using thermal modeling analysis. ADHESIVE ATTACH • High thermal silver filled epoxy is dispensed in a controlled manner and die is placed using an appropriate collet. Assembled parts are cured at temperatures between 150C and 180C. • Always refer to epoxy manufacturer's data sheet. • Industry recognized standards for epoxy die attach are clearly defined within MIL-883. Early Life Screen Conditions RFMD recommends an Early Life Screen test that subjects this die to TJ =250C (junction temperature) for at least 6 hours prior to field deployment. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. 8 of 9 www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110520 RF3931D Mounting and Thermal Considerations (continued) In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS =-5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade-offs. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS =-8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS =CGD +CGS COSS = CGD + CDS CRSS = CGD DS110520 www.BDTIC.com/RFMD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 9