Download GNS RF2480

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts

Electrification wikipedia , lookup

Electric power system wikipedia , lookup

Electrical substation wikipedia , lookup

Power over Ethernet wikipedia , lookup

Tube sound wikipedia , lookup

Immunity-aware programming wikipedia , lookup

Solar micro-inverter wikipedia , lookup

History of electric power transmission wikipedia , lookup

Decibel wikipedia , lookup

Power engineering wikipedia , lookup

Stray voltage wikipedia , lookup

Three-phase electric power wikipedia , lookup

Islanding wikipedia , lookup

Power inverter wikipedia , lookup

Control system wikipedia , lookup

Variable-frequency drive wikipedia , lookup

Distribution management system wikipedia , lookup

Power MOSFET wikipedia , lookup

Amtrak's 25 Hz traction power system wikipedia , lookup

Wien bridge oscillator wikipedia , lookup

Amplifier wikipedia , lookup

Rectifier wikipedia , lookup

Schmitt trigger wikipedia , lookup

Voltage regulator wikipedia , lookup

Pulse-width modulation wikipedia , lookup

Resistive opto-isolator wikipedia , lookup

Alternating current wikipedia , lookup

Audio power wikipedia , lookup

Buck converter wikipedia , lookup

Voltage optimisation wikipedia , lookup

Mains electricity wikipedia , lookup

Switched-mode power supply wikipedia , lookup

Opto-isolator wikipedia , lookup

Transcript
RF2480
RF2480Direct
Quadrature
Modulator
DIRECT QUADRATURE MODULATOR
NOT FOR NEW DESIGNS
RoHS Compliant & Pb-Free Product
Package Style: SOIC-16
1
16
I SIG
Q REF
2
15
Q SIG



Applications



NO
T

3
GND2

4
GND2
5
LO
6
-45°
14
GND1
13
GND1
12
GND1
11
VCC2
10
GND1
9
RF OUT
+45°
VCC1
7
PD
8
POWER
CONTROL
Functional Block Diagram
Product Description
NE

Dual-Band CDMA Base Stations
TDMA/TDMA-EDGE Base Stations
GSM-EDGE/EGSM Base Stations
W-CDMA Base Stations
WLAN and WLL Systems
TETRA Systems
FO
R

GND2
DE

Typical Carrier
Suppression>35dBc over
temperature with highly linear
operation
Single 5V Power Supply
Integrated RF quadrature network
Digitally controlled Power
Down mode
800MHz to 2500MHz operation
W

SI
GN
S
I REF
Features
The RF2480 is a monolithic integrated quadrature modulator IC capable
of universal direct modulation for high-frequency AM, PM, or compound
carriers. This low-cost IC features excellent linearity, noise floor, and
over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90° carrier phase
shift network, carrier limiting amplifiers, two matched double-balanced
mixers, summing amplifier, and an output RF amplifier which will drive
50 from 800MHz to 2500MHz. Component matching is used to obtain
excellent amplitude balance and phase accuracy.
Ordering Information
RF2480
RF2480 PCBA
GaAs HBT
GaAs MESFET
InGaP HBT
Direct Quadrature Modulator
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
1 of 8
RF2480
Supply Voltage
Rating
Unit
-0.5 to +7.5
VDC
Input LO and RF Levels
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Min.
Specification
Typ.
Max.
Carrier Input
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
SI
GN
S
Absolute Maximum Ratings
Parameter
Unit
Condition
T=25°C, VCC =5V
Power Level
800
2500
-6
+6
Input VSWR
4.5:1
2:1
2:1
Modulation Input
DC
Reference Voltage (VREF)
3.0
NE
0.2
Quadrature Phase Error
Input Resistance
Input Bias Current
At 2500MHz unmatched
MHz
V
dB
3
°
30
k
40
A
+2
dBm
TETRA I&Q Amplitude=2VPP
Over operating temperature.
RF Output (~800MHz)
FO
R
At 900MHz unmatched
At 1800MHz unmatched
V
VREF ±1.0
Maximum Modulation (I&Q)
Gain Asymmetry
250
W
Frequency Range
MHz
dBm
DE
Frequency Range
LO=800MHz, -5dBm; SSB
-3
0
High-Linearity Output Power
-6
-5
dBm
TETRA I&Q Amplitude=1.1VPP with an ACPR of
-47dBc. Over operating temperature.
Adjacent Channel
Power Rejection
-47
-52
dBc
TETRA modulation applied with POUT =-5dBm.
Over operating temperature.
NO
T
Maximum Output Power
Output P1dB
+2
+3
dBm
Over operating temperature.
IM3 Suppression
-39
-40
dBc
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
IM5 Suppression
-49
-59
dBc
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
IM7 Suppression
-49
-71
dBc
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
Unadjusted performance.
Carrier Suppression
-25
-30
dBc
Sideband Suppression
-25
-30
dBc
Broadband Noise Floor
2 of 8
-150
-145
dBm/Hz
Unadjusted performance.
26MHz offset with TETRA signal applied
POUT =-5dBm.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS111219
RF2480
Parameter
Min.
Specification
Typ.
0
+4
dBm
-11
dBm
Max.
Unit
RF Output (~900MHz)
LO=880MHz, -5dBm; SSB
High-Linearity Output Power
Carrier Suppression
Sideband Suppression
dB
T=25°C; POUT =-11dBm (meets CDMA base
station requirements); optimized I,Q DC offsets
35
dB
Over Temperature (Temperature cycled from 40°C to +85°C after optimization at T=25°C;
POUT =-11dBm)
50
dB
T=25°C; POUT =-11dBm; optimized I,Q DC offsets
dB
Over Temperature (Temperature cycled from 40°C to +85°C after optimization at T=25°C;
POUT =-11dBm)
13-j:25
Broadband Noise Floor
-153.0
RF Output (~2000MHz)
-7
High-Linearity Output Power
-17
dBm
NE
50
dBm
W
50
35
Sideband Suppression
-3

dBm/Hz
DE
Output Impedance
Carrier Suppression
FO
R
40
Output Impedance
Broadband Noise Floor
Power Down
Turn On/Off Time
PD Input Resistance
NO
T
I&Q Amplitude=0.325VPP
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-17dBm
dB
T=25°C; POUT =-17dBm; optimized I,Q DC offsets
dB
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-17dBm

At 20MHz offset, VCC =5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
ns
k
2.8
1.0
I&Q Amplitude=2VPP
dB
dBm/Hz
100
LO=2000MHz, -5dBm; SSB
T=25°C; POUT =-17dBm; optimized I,Q DC offsets
-158.0
50
At 20MHz offset, VCC =5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
dB
58-j11
Power Control “ON”
Power Control “OFF”
I&Q Amplitude=0.325VPP
50
35
Maximum Output Power
I&Q Amplitude=2VPP
SI
GN
S
Maximum Output Power
Condition
1.2
V
Threshold voltage
V
Threshold voltage
Power Supply
Voltage
Current
5
4.5
6.0
50
25
DS111219
V
Specifications
V
Operating Limits
mA
Operating
A
Power Down
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
3 of 8
RF2480
Pin
1
Function
I REF
Description
Interface Schematic
Reference voltage for the I mixer. This voltage should be the same as the
DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended.
The SIG and REF inputs are inputs of a differential amplifier. Therefore the
REF and SIG inputs are interchangeable. If swapping the I SIG and I REF
pins, the Q SIG and Q REF also need to be swapped to maintain the correct
phase. It is also possible to drive the SIG and REF inputs in a balanced
mode. This will increase the gain.
I SIG
I REF
100 
100 
425 
4
5
6
GND2
GND2
LO
7
VCC1
8
PD
RF OUT
NO
T
9
10
GND3
11
VCC2
12
GND1
13
14
GND1
GND1
4 of 8
SI
GN
S
Q REF
100 
100 
425 
425 
DE
GND2
Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane.
Same as pin 3.
Same as pin 3.
The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage driven so matching at different frequencies is not required.
Power supply for all circuits except the RF output stage. An external capacitor is needed if no other low frequency bypass capacitor is nearby.
Power Down control. When this pin is "low", all circuits are shut off. A "low"
is typically 1.2V or less at room temperature.When this pin is "high" (VCC),
all circuits are operating normally. If PD is below VCC, output power and
performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power
control is required.
RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power.
FO
R
3
425 
Q SIG
W
Q REF
LO
NE
2
For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG
and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and
signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted
slightly to compensate for inherent undesired internal offsets. See RFMD
AN0001 for more detail.
Reference voltage for the Q mixer. This voltage should be the same as the
DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended.
See pin 1 for more details.
V CC
2 0 0 
PD
RF OUT
Ground connection for the RF output stage. This pin should be connected
directly to the ground plane.
Power supply for the RF output amplifier. An external capacitor is needed if
no other low frequency bypass capacitor is near by.
Ground connection for the LO and baseband amplifiers, and for the mixers.
This pin should be connected directly to the ground plane.
Same as pin 12.
Same as pin 12.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS111219
RF2480
Pin
15
I SIG
Description
Interface Schematic
Baseband input to the Q mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude of
2V; for highly linear operation, the input signal (and output power) must be
reduced appropriately. The recommended DC level for this pin is 3.0V. The
peak minimum voltage on this pin (VREF - peak modulation amplitude)
should never drop below 2.0V. The peak maximum voltage on this pin
(VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1
for more details.
Baseband input to the I mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude of
2V; for highly linear operation, the input signal (and output power) must be
reduced appropriately. The recommended DC level for this pin is 3.0V. The
peak minimum voltage on this pin (VREF - peak modulation amplitude)
should never drop below 2.0V. The peak maximum voltage on this pin
(VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1
for more details.
Q SIG
Q REF
100 
425 
100 
425 
I SIG
I REF
100 
SI
GN
S
16
Function
Q SIG
425 
100 
425 
DE
Package Drawing
NE
W
0.157
0.150
FO
R
0.393
0.386
NO
T
8° MAX
0° MIN
DS111219
0.008
0.004
0.018
0.014
0.050
0.068
0.053
0.244
0.229
0.034
0.016
-A-
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity - 0.005 with
respect to datum "A".
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
5 of 8
RF2480
Application Schematic
DC-Coupled
IREF
100 nF
100 nF
1
16
I SIG
2
15
Q SIG
14
3

4
LO IN
6
-45°
7
8
11
10
9
100 nF
RF OUT
NO
T
FO
R
NE
100 nF
POWER
CONTROL
VCC
W
PD
DE
+45°
100 nF
13
12
5
VCC
SI
GN
S
QREF
6 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS111219
RF2480
Evaluation Board Schematic
P1
P1-1
P2
1
VCC
1
REF
2
GND
2
GND
3
NC
3
NC
P2-1
50  strip
P2-1
1
2
15
3
4

7
8
-45°
+45°
POWER
CONTROL
13
11
C3
100 nF
P1-1
10
50  strip
9
RF OUT
J2
2480400-
NO
T
FO
R
NE
W
C2
100 nF
DE
P1-1
Q SIG
J3
12
50  strip
6
50  strip
14
5
LO IN
J1
I SIG
J4
SI
GN
S
C1
100 nF
16
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
7 of 8
RF2480
Evaluation Board Layout
Board Size 1.510” x 1.510”
NO
T
FO
R
NE
W
DE
SI
GN
S
Board Thickness 0.031”, Board Material FR-4
8 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
www.BDTIC.com/RFMD
DS111219