Download FDC658P Single P-Channel, Logic Level, PowerTrench MOSFET

February 1999
FDC658P
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
SuperSOTTM-6
SOT-23
SuperSOTTM-8
-4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V
RDS(ON) = 0.075 Ω @ VGS = -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOIC-16
SOT-223
SO-8
S
1
6
8
.65
2
5
3
4
D
D
G
D
SuperSOT
TM
-6
pin 1
Absolute Maximum Ratings
Symbol
Parameter
VDSS
D
TA = 25°C unless otherwise note
Ratings
Units
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous
-4
A
(Note 1a)
- Pulsed
PD
Maximum Power Dissipation
-20
(Note 1a)
(Note 1b)
TJ,TSTG
Operating and Storage Temperature Range
1.6
W
0.8
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC658P Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-30
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = -250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
o
V
mV/oC
-22
TJ = 55 oC
-1
µA
-10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
∆VGS(th)/∆TJ
Gate Threshold VoltageTemp.Coefficient
ID = -250 µA, Referenced to 25 oC
-1
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -4.0 A
TJ = 125 C
VGS = -4.5 V, ID = -3.4 A
On-State Drain Current
VGS = -10 V, VDS = -5 V
gFS
Forward Transconductance
VDS = -5V, ID = -4 A
-3
V
mV/oC
4.1
o
ID(on)
-1.7
0.041
0.05
0.058
0.08
0.06
0.075
-20
Ω
A
9
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = -15 V, VGS = 0 V,
750
pF
Coss
Output Capacitance
f = 1.0 MHz
220
pF
Crss
Reverse Transfer Capacitance
100
pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
VDD = -15 V, ID = -1 A,
12
22
ns
tr
Turn - On Rise Time
VGS = -10 V, RGEN = 6 Ω
14
25
ns
tD(off)
Turn - Off Delay Time
24
38
ns
tf
Turn - Off Fall Time
16
27
ns
Qg
Total Gate Charge
VDS = -15 V, ID = -4.0 A,
8
12
nC
Qgs
Gate-Source Charge
VGS = -5 V
Qgd
Gate-Drain Charge
1.8
nC
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Continuous Source Diode Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.3 A
(Note 2)
-0.76
-1.3
A
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed
by design while RθCA is determined by the user's board design.
a. 78oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board.
b. 156oC/W when mounted on a minimum pad of 2oz Cu on FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC658P Rev.C
Typical Electrical Characteristics
16
R DS(on) , NORMALIZED
- ID , DRAIN-SOURCE CURRENT (A)
VGS= -10V
-6.0V
-4.5V
-4.0V
12
-3.5V
8
-3.0V
4
0
0
1
2
3
-VDS , DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
2
20
1.8
VGS = -4.0 V
1.6
-4.5V
1.4
-6.0V
1.2
-8.0V
-10.0V
1
0.8
4
-5.0V
0
4
8
12
- I D , DRAIN CURRENT (A)
16
20
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.16
I D = -4A
V GS = -10V
1.4
1.2
1
0.8
0.6
-50
ID = -2A
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
0.12
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
150
- I D , DRAIN CURRENT (A)
V DS = -5V
TJ = -55°C
-IS , REVERSE DRAIN CURRENT (A)
20
125°C
25°C
12
8
4
1
0.04
TJ = 25°C
2
3
4
5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
4
6
8
-V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
with Temperature.
0
TJ = 125°C
0
-25
Figure 3. On-Resistance Variation
16
0.08
6
20
10
VGS = 0V
TJ = 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC658P Rev.C
Typical Electrical Characteristics (continued)
3000
I D = -4A
8
VDS = -5V
-10V
CAPACITANCE (pF)
-VGS , GATE-SOURCE VOLTAGE (V)
10
-15V
6
4
1000
Ciss
300
Coss
2
0
0
3
6
9
Q g , GATE CHARGE (nC)
12
100
30
0.1
15
0.3
1
3
7
-V DS , DRAIN TO SOURCE VOLTAGE (V)
15
30
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
80
5
10
S
RD
(ON
)L
IMI
100
us
T
1m
s
10m
s
10
0m
s
1s
3
1
0.3
VGS = -10V
SINGLE PULSE
R θJA = 156°C/W
TA = 25°C
0.1
0.03
0.01
0.1
0.2
SINGLE PULSE
RθJA =156°C/W
TA = 25°C
4
POWER (W)
30
3
2
DC
1
0.5
1
2
5
10
20
50
0
0.01
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
-ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
0.5
D = 0.5
0.2
0.1
0.05
R θJA (t) = r(t) * R θJA
R θJA = 156°C/W
0.2
0.1
P(pk)
0.05
t1
0.02
0.02
0.01
t2
TJ - TA = P * R θJA (t)
0.01
Duty Cycle, D = t 1/ t 2
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC658P Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.