Download Single Schottky Barrier Diode, 50 V, 1 A

SBE002
Ordering number : EN6343A
SANYO Semiconductors
DATA SHEET
SBE002
Schottky Barrier Diode
50V, 1A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
•
•
Low forward voltage (VF max=0.55V)
Fast reverse recovery time (trr max=10ns)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm)
Large allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Conditions
Ratings
Unit
VRRM
VRSM
50
55
V
1
A
Surge Forward Current
IO
IFSM
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
50Hz sine wave, 1 cycle
V
Product & Package Information
unit : mm (typ)
7018A-012
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
5
SBE002-TL-E
0.15
2.9
6
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
SD
0.05
1.6
0.2
0.6
2.8
0.2
0.6
Package Dimensions
TL
3
0.4
1 : Cathode
2 : Cathode
3 : No contact
4 : Anode
5 : Cathode
6 : Cathode
Electrical Connection
6
5
4
1
2
3
SANYO : CPH6
http://www.sanyosemi.com/en/network/
91912 TKIM/O0899GI (KT) No.6343-1/6
SBE002
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Conditions
VR
VF
IR
Forward Voltage
Reverse Current
IR=300μA
IF=1A
typ
max
50
Interterminal Capacitance
C
Reverse Recovery Time
trr
Rth(j-a)
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (600mm2×0.8mm)
Unit
V
0.55
VR=25V
VR=10V, f=1MHz
Thermal Resistance
Ratings
min
80
52
pF
10
110
V
μA
ns
°C / W
trr Test Cicuit
100Ω
10Ω
100mA
50Ω
10μs
10mA
100mA
Duty≤10%
5V
trr
Ordering Information
Device
SBE002-TL-E
Package
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
No.6343-2/6
SBE002
IF -- VF
10
5
3
2
3
Reverse Current, IR -- mA
Forward Current, IF -- A
7
5
C
5°
2
=1
2
°C
25
Ta
1.0
7
5
3
2
0.1
7
5
0
0.2
0.4
0.6
0.8
1.0
5
3
2
50°C
0.01
25°C
5
3
2
10
20
30
40
50
60
IT00609
C -- VR
5
f=1MHz
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
Rectangular wave
(4)
0.8
θ
(3)
(2)
360°
0.6
75°C
0.1
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
1.2
100°C
5
3
2
IT00608
PF(AV) -- IO
1.4
5°C
Ta=12
1.0
0.001
5
0
1.2
1.0
Forward Voltage, VF -- V
(1)
0.4
Sine wave
0.2
3
2
100
7
5
3
2
180°
360°
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current, IO -- A
1.4
IT00610
IS -- t
14
Surge Forward Current, IFSM(Peak) -- A
IR -- VR
10
10
1.0
2
3
5
7
10
2
Reverse Voltage, VR -- V
3
5
7 100
IT00611
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
IT00612
No.6343-3/6
SBE002
Embossed Taping Specification
SBE002-TL-E
No.6343-4/6
SBE002
Outline Drawing
SBE002-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No.6343-5/6
SBE002
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PS No.6343-6/6