Download Dual Schottky Barrier Diode, 30 V, 1 A

SBE807
Ordering number : ENA1055A
SANYO Semiconductors
DATA SHEET
SBE807
Schottky Barrier Diode
30V, 1.0A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, and choppers)
Features
•
•
Low switching noise
Low reverse current (VR=16V, IR max=15μA)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Conditions
Ratings
Unit
VRRM
VRSM
30
35
V
1.0
A
Surge Forward Current
IO
IFSM
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
50Hz sine wave, 1 cycle
Product & Package Information
unit : mm (typ)
7017A-001
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
5
4
SBE807-TL-E
0.15
2.9
3
Packing Type : TL
Marking
LOT No.
SJ
0.05
1.6
2.8
0.2
0.6
Package Dimensions
V
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
Electrical Connection
5
4
3
SANYO : CPH5
1
2
http://www.sanyosemi.com/en/network/
91912 TKIM/22708SB TIIM TC-00001249 No. A1055-1/6
SBE807
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
VR
VF1
IR=0.2mA
IF=0.7A
VF2
IF=1.0A
VR=16V
IR
C
Interterminal Capacitance
Reverse Recovery Time
min
typ
Unit
max
30
V
0.45
0.50
0.48
0.53
V
V
15
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm2×0.8mm)
trr
Rth(j-a)
Thermal Resistance
Ratings
Conditions
μA
27
pF
10
ns
111
°C / W
trr Test Circuit
50Ω
100Ω
10Ω
10μs
10mA
100mA 100mA
Duty≤10%
--5V
trr
Ordering Information
Device
SBE807-TL-E
Package
Shipping
memo
CPH5
3,000pcs./reel
Pb Free
IF -- VF
3
2
Reverse Current, IR -- μA
7
5
3
2
0.1
7
5
Ta=
125
°C
100
°C
75°C
50°C
25°C
0°C
--25°C
Forward Current, IF -- A
Ta=125°C
100°C
1000
5
1.0
3
2
75°C
100
5
50°C
10
5
25°C
1.0
5
0 °C
0.1
5
0.01
5
--25°C
0.001
5
0.01
0.0001
0.1
0
0.2
0.3
0.4
0.5
0.6
Forward Voltage, VF -- V
0.7
0
Rectangular
wave
0.7
(1)
(2) (4)(3) (5)
Sine
wave
180°
0.5
360°
0.4
0.3
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
Average Output Current, IO -- A
1.2
15
20
25
30
35
IT09554
Ta -- IO
150
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
θ
360°
0.6
10
Reverse Voltage, VR -- V
PF(AV) -- IO
0.8
5
IT09553
Ambient Temperature, Ta -- °C
Average Forward Power Dissipation, PF(AV) -- W
IR -- VR
10000
5
125
100
75
50
(1) (2)
(4)
(3)
(5)
25
0
1.4
IT13283
0
0.2
0.4
0.6 0.76 0.8 0.95 1.0 1.05 1.2
Average Output Current, IO -- A
1.4
IT13284
No. A1055-2/6
SBE807
C -- VR
2
100
7
5
3
2
10
7
0.1
IFSM -- t
14
Surge Forward Current, IFSM(Peak) -- A
Interterminal Capacitance, C -- pF
3
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
2
3
5
7 1.0
2
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
IT09556
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
No. A1055-3/6
SBE807
Embossed Taping Specification
SBE807-TL-E
No. A1055-4/6
SBE807
Outline Drawing
SBE807-TL-E
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1055-5/6
SBE807
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PS No. A1055-6/6