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STGF30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode 3 1 2 Applications ■ TO-220FP Motor control Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGF30H60DF GF30H60DF TO-220FP Tube October 2012 Doc ID 023791 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.bdtic.com/ST 1/9 www.st.com 9 Electrical ratings 1 STGF30H60DF Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 34 A IC Continuous collector current at TC = 100 °C 17 A Pulsed collector current 68 A Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge not repetitive forward current tp = 10 ms sinusoidal 90 A PTOT Total dissipation at TC = 25 °C 31 W Short-circuit withstand time at VCC = 400 V, VGE = 15 V 6 µs - 55 to 150 °C VCES ICP (1) VGE IF tSC TSTG Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Symbol 2/9 Storage temperature range Operating junction temperature TJ 1. Parameter Thermal data Parameter Value Unit RthJC Thermal resistance junction-case IGBT 4 °C/W RthJC Thermal resistance junction-case diode 5.6 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W Doc ID 023791 Rev 1 www.bdtic.com/ST STGF30H60DF 2 Electrical characteristics Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Typ. Max. 600 Unit V VGE = 15 V, IC = 30 A Collector-emitter saturation VGE = 15 V, IC = 30 A voltage TJ = 150 °C 1.9 VCE(sat) VGE(th) Gate threshold voltage VCE = VGE, IC = 0.5 mA 6.0 ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Symbol Cies Coes Cres Qg Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 400 V, IC = 30 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge Symbol V Dynamic Total gate charge Table 6. V 2.2 Min. Typ. Max. Unit - 4200 120 75 - pF pF pF - 115 - nC - TBD - nC - TBD - nC Min. Typ. Max. Unit Switching on/off (inductive load) Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V - TBD TBD TBD - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TJ = 150 °C - TBD TBD TBD - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V - TBD TBD TBD - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TJ = 150 °C - TBD TBD TBD - ns ns ns Doc ID 023791 Rev 1 www.bdtic.com/ST 3/9 Electrical characteristics Table 7. Symbol 1. STGF30H60DF Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V - TBD TBD TBD - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TJ = 150 °C - TBD TBD TBD - mJ mJ mJ Min. Typ. Max. Unit 2.0 2.3 1.95 V V - ns nC A - ns nC A Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 8. Symbol 4/9 Collector-emitter diode Parameter Test conditions VF Forward on-voltage IF = 30 A IF = 30 A, TJ = 150 °C - trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 400 V, di/dt = 100 A/µs - TBD TBD TBD trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 400 V, di/dt = 100 A/µs, TJ =150 °C - TBD TBD TBD Doc ID 023791 Rev 1 www.bdtic.com/ST STGF30H60DF Test circuits 3 Test circuits Figure 2. Test circuit for inductive load switching Figure 3. Gate charge test circuit AM01504v1 Figure 4. Switching waveform AM01505v1 Figure 5. IF trr 90% VCE Qrr di/dt 90% 10% VG Diode recovery time waveform ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 Doc ID 023791 Rev 1 www.bdtic.com/ST AM01507v1 5/9 Package mechanical data 4 STGF30H60DF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 6/9 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 023791 Rev 1 www.bdtic.com/ST STGF30H60DF Package mechanical data Figure 6. TO-220FP drawing 7012510_Rev_K_B Doc ID 023791 Rev 1 www.bdtic.com/ST 7/9 Revision history 5 STGF30H60DF Revision history Table 10. 8/9 Document revision history Date Revision 16-Oct-2012 1 Changes Initial release. Doc ID 023791 Rev 1 www.bdtic.com/ST STGF30H60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 023791 Rev 1 www.bdtic.com/ST 9/9