Download STGFW45HF60W

STGFW45HF60W
23 A, 600 V Ultrafast IGBT
Datasheet − preliminary data
Features
■
Improved Eoff at elevated temperature
■
Low CRES / CIES ratio (no cross-conduction
susceptibility)
1
Applications
■
High frequency converters
■
Power factor correction
3
2
1
Description
TO-3PF
This Ultrafast IGBT is developed using a new
planar technology to yield a device with tighter
switching energy variation (Eoff) versus
temperature. The suffix "W" denotes a subset of
products designed for high switching frequency
operation (over 100 kHz).
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGFW45HF60W
GFW45HF60W
TO-3PF
Tube
July 2012
Doc ID 023473 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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12
Electrical ratings
1
STGFW45HF60W
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
50
A
IC
Continuous collector current at TC = 100 °C
23
A
ICP (1)
Pulsed collector current
150
A
(2)
Turn-off latching current
80
A
VCES
ICL
Parameter
VGE
Gate-emitter voltage
± 20
V
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
2500
V
PTOT
Total dissipation at TC = 25 °C
128
W
Tstg
Storage temperature
– 55 to 150
°C
Value
Unit
0.97
°C/W
50
°C/W
Operating junction temperature
Tj
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
2. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C
Table 3.
Symbol
2/12
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case IGBT
Rthj-amb
Thermal resistance junction-ambient
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STGFW45HF60W
2
Electrical characteristics
Electrical characteristics
(TJ = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 1 mA
VCE(sat)
Collector-emitter saturation VGE = 15 V, IC= 30 A
voltage
VGE = 15V, IC = 30 A,TJ= 125 °C
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, TJ = 125 °C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20 V
Table 5.
Symbol
Min.
Typ.
Max. Unit
600
V
1.9
1.65
3.75
2.5
V
V
5.75
V
500
5
µA
mA
± 100
nA
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-
2900
260
55
-
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 400 V, IC = 30 A,
VGE = 15 V,
Figure 16
-
160
17
65
-
nC
nC
nC
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Electrical characteristics
Table 6.
Symbol
STGFW45HF60W
Switching on/off (inductive load)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 30 A
RG = 6.8 Ω, VGE = 15 V,
(Figure 15)
-
30
12
2600
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 30 A
RG = 6.8 Ω, VGE = 15 V,
TJ = 125 °C (Figure 15)
-
30
14
2200
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 30 A,
RG = 6.8 Ω, VGE = 15 V
(Figure 15)
-
30
145
50
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 30 A,
RG = 6.8 Ω, VGE =15 V,
TJ = 125 °C
(Figure 15)
-
47
185
65
-
ns
ns
ns
Min.
Typ.
Max.
Unit
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Eon(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 30 A
RG = 6.8 Ω, VGE = 15 V,
(Figure 17)
-
200
330
530
Eon(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 30 A
RG = 6.8 Ω, VGE = 15 V,
TJ = 125 °C (Figure 17)
-
230
550
780
µJ
µJ
µJ
800
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 16. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C). Eon includes diode recovery energy.
If the IGBT is offered in a package without the co-pack diode, a SIC diode is used in the test circuit in
Figure 16.
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STGFW45HF60W
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
IC (A)
IC200
(A)
VGE = 15 V
10 V
9V
150
150
VCE = 10 V
100
8V
100
50
7V
50
6V
0
0
0
Figure 4.
2
4
6
8
0
VCE (V)
10
Normalized VCE(sat) vs. IC
Figure 5.
VCE(sat)
VCE(sat)
(norm)
(norm)
1.4
2
4
8
VGE (V)
Normalized VCE(sat) vs. temperature
VGE = 15 V
1.3
TJ = -50 ºC
6
IC = 80 A
1.2
TJ = 25 ºC
1.1
60 A
20 A
1
40 A
0.9
TJ = 150 ºC
0.8
10 A
30 A
0.7
0.6
IC = 5 A
VGE = 15 V
0.4
0
Figure 6.
20
40
60
IC (A)
Normalized breakdown voltage vs.
temperature
VCES
(norm)
0.5
-50
Figure 7.
0
50
100
TJ (°C)
Normalized gate threshold voltage
vs. temperature
VGE(th)
(norm)
1.1
1.05
1
1
0.9
0.8
IC = 1 mA
0.95
VGE = VCE
IC = 250 μA
0.7
0.6
0.9
-50
0
50
100
TJ (°C)
-50
0
50
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100
TJ (°C)
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Electrical characteristics
Figure 8.
STGFW45HF60W
Gate charge vs. gate-emitter
voltage
Figure 9.
Capacitance variations
C (pF)
VGE (V)
16
f = 1 MHz
VGE = 0
4000
VCC = 400 V
IC = 30 A
12
3000
8
2000
4
1000
Cies
Coes
Cres
0
0
40
80
120
160
0
QG (nC)
Figure 10. Switching losses vs temperature
0
10
20
30
40
VCE (V)
Figure 11. Switching losses vs. gate
resistance
E (μJ)
E (μJ)
500
3000
450
2500
EOFF
EOFF
EON
400
2000
EON
350
1500
VCE = 400 V, VGE = 15 V
IC = 30 A, RG =6.8 Ω
300
VCE = 400 V, VGE = 15 V
IC = 30 A, TJ = 125 C
1000
500
250
25
50
75
100
0
TJ (°C)
Figure 12. Switching losses vs. collector
current
E (μJ)
40
80
120
160
200 Rg (Ω)
Figure 13. Turn-off SOA
IC (A)
1000
EOFF
100
800
600
10
EON
VGE = 15 V, RG = 6.8 Ω
TC = 150° C
400
1
200
VCE = 400 V, VGE = 15 V
RG = 6.8 Ω, TJ = 125 C
0.1
0
10
6/12
20
30
40
IC (A)
1
10
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100
VCE (V)
STGFW45HF60W
Electrical characteristics
Figure 14. Thermal impedance
AM12768v1
1.00E+00
d 0.5
Normalized Zth: K(t)
d 0.2
1.00E-01
d 0.1
d 0.05
d 0.02
d
d 0.01
1.00E-02
d0
1.00E-03
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
s
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Test circuits
3
STGFW45HF60W
Test circuits
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
AM01504v1
Figure 17. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
AM01506v1
8/12
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AM01505v1
STGFW45HF60W
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 8.
TO-3PF mechanical data
mm
Dim.
Min.
Typ.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10
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Package mechanical data
STGFW45HF60W
Figure 18. TO-3PF drawing
L3
L
D
E
A
C
D1
Dia
L2
L6
L7
F2(3x)
F(3x)
G1
H
G
R
L5
N
L4
7627132_C
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STGFW45HF60W
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
24-Jul-2012
1
Changes
Initial release.
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STGFW45HF60W
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