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STGFW45HF60W 23 A, 600 V Ultrafast IGBT Datasheet − preliminary data Features ■ Improved Eoff at elevated temperature ■ Low CRES / CIES ratio (no cross-conduction susceptibility) 1 Applications ■ High frequency converters ■ Power factor correction 3 2 1 Description TO-3PF This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz). Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGFW45HF60W GFW45HF60W TO-3PF Tube July 2012 Doc ID 023473 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.bdtic.com/ST 1/12 www.st.com 12 Electrical ratings 1 STGFW45HF60W Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 50 A IC Continuous collector current at TC = 100 °C 23 A ICP (1) Pulsed collector current 150 A (2) Turn-off latching current 80 A VCES ICL Parameter VGE Gate-emitter voltage ± 20 V VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V PTOT Total dissipation at TC = 25 °C 128 W Tstg Storage temperature – 55 to 150 °C Value Unit 0.97 °C/W 50 °C/W Operating junction temperature Tj 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA 2. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol 2/12 Thermal data Parameter Rthj-case Thermal resistance junction-case IGBT Rthj-amb Thermal resistance junction-ambient Doc ID 023473 Rev 1 www.bdtic.com/ST STGFW45HF60W 2 Electrical characteristics Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 1 mA VCE(sat) Collector-emitter saturation VGE = 15 V, IC= 30 A voltage VGE = 15V, IC = 30 A,TJ= 125 °C VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V Table 5. Symbol Min. Typ. Max. Unit 600 V 1.9 1.65 3.75 2.5 V V 5.75 V 500 5 µA mA ± 100 nA Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 2900 260 55 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 400 V, IC = 30 A, VGE = 15 V, Figure 16 - 160 17 65 - nC nC nC Doc ID 023473 Rev 1 www.bdtic.com/ST 3/12 Electrical characteristics Table 6. Symbol STGFW45HF60W Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, (Figure 15) - 30 12 2600 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, TJ = 125 °C (Figure 15) - 30 14 2200 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RG = 6.8 Ω, VGE = 15 V (Figure 15) - 30 145 50 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RG = 6.8 Ω, VGE =15 V, TJ = 125 °C (Figure 15) - 47 185 65 - ns ns ns Min. Typ. Max. Unit Table 7. Symbol Switching energy (inductive load) Parameter Test conditions Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, (Figure 17) - 200 330 530 Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, TJ = 125 °C (Figure 17) - 230 550 780 µJ µJ µJ 800 µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 16. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C). Eon includes diode recovery energy. If the IGBT is offered in a package without the co-pack diode, a SIC diode is used in the test circuit in Figure 16. 4/12 Doc ID 023473 Rev 1 www.bdtic.com/ST STGFW45HF60W Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics IC (A) IC200 (A) VGE = 15 V 10 V 9V 150 150 VCE = 10 V 100 8V 100 50 7V 50 6V 0 0 0 Figure 4. 2 4 6 8 0 VCE (V) 10 Normalized VCE(sat) vs. IC Figure 5. VCE(sat) VCE(sat) (norm) (norm) 1.4 2 4 8 VGE (V) Normalized VCE(sat) vs. temperature VGE = 15 V 1.3 TJ = -50 ºC 6 IC = 80 A 1.2 TJ = 25 ºC 1.1 60 A 20 A 1 40 A 0.9 TJ = 150 ºC 0.8 10 A 30 A 0.7 0.6 IC = 5 A VGE = 15 V 0.4 0 Figure 6. 20 40 60 IC (A) Normalized breakdown voltage vs. temperature VCES (norm) 0.5 -50 Figure 7. 0 50 100 TJ (°C) Normalized gate threshold voltage vs. temperature VGE(th) (norm) 1.1 1.05 1 1 0.9 0.8 IC = 1 mA 0.95 VGE = VCE IC = 250 μA 0.7 0.6 0.9 -50 0 50 100 TJ (°C) -50 0 50 Doc ID 023473 Rev 1 www.bdtic.com/ST 100 TJ (°C) 5/12 Electrical characteristics Figure 8. STGFW45HF60W Gate charge vs. gate-emitter voltage Figure 9. Capacitance variations C (pF) VGE (V) 16 f = 1 MHz VGE = 0 4000 VCC = 400 V IC = 30 A 12 3000 8 2000 4 1000 Cies Coes Cres 0 0 40 80 120 160 0 QG (nC) Figure 10. Switching losses vs temperature 0 10 20 30 40 VCE (V) Figure 11. Switching losses vs. gate resistance E (μJ) E (μJ) 500 3000 450 2500 EOFF EOFF EON 400 2000 EON 350 1500 VCE = 400 V, VGE = 15 V IC = 30 A, RG =6.8 Ω 300 VCE = 400 V, VGE = 15 V IC = 30 A, TJ = 125 C 1000 500 250 25 50 75 100 0 TJ (°C) Figure 12. Switching losses vs. collector current E (μJ) 40 80 120 160 200 Rg (Ω) Figure 13. Turn-off SOA IC (A) 1000 EOFF 100 800 600 10 EON VGE = 15 V, RG = 6.8 Ω TC = 150° C 400 1 200 VCE = 400 V, VGE = 15 V RG = 6.8 Ω, TJ = 125 C 0.1 0 10 6/12 20 30 40 IC (A) 1 10 Doc ID 023473 Rev 1 www.bdtic.com/ST 100 VCE (V) STGFW45HF60W Electrical characteristics Figure 14. Thermal impedance AM12768v1 1.00E+00 d 0.5 Normalized Zth: K(t) d 0.2 1.00E-01 d 0.1 d 0.05 d 0.02 d d 0.01 1.00E-02 d0 1.00E-03 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 s Doc ID 023473 Rev 1 www.bdtic.com/ST 7/12 Test circuits 3 STGFW45HF60W Test circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit AM01504v1 Figure 17. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 8/12 Doc ID 023473 Rev 1 www.bdtic.com/ST AM01505v1 STGFW45HF60W 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 Doc ID 023473 Rev 1 www.bdtic.com/ST 10.20 9/12 Package mechanical data STGFW45HF60W Figure 18. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 F2(3x) F(3x) G1 H G R L5 N L4 7627132_C 10/12 Doc ID 023473 Rev 1 www.bdtic.com/ST STGFW45HF60W 5 Revision history Revision history Table 9. Document revision history Date Revision 24-Jul-2012 1 Changes Initial release. Doc ID 023473 Rev 1 www.bdtic.com/ST 11/12 STGFW45HF60W Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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