Download STGP35HF60W

STGP35HF60W
35 A, 600 V Ultrafast IGBT
Datasheet − production data
Features
■
Improved Eoff at elevated temperature
■
Minimal tail current
■
Low conduction losses
Applications
■
Welding
■
High frequency converters
■
Power factor correction
3
1
2
TO-220
Description
This Ultrafast IGBT is developed using a new
planar technology to yield a device with tighter
switching energy variation (Eoff) versus
temperature. The suffix "W" denotes a subset of
products designed for high switching frequency
operation (over 100 kHz).
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order codes
Markings
Packages
Packaging
STGP35HF60W
GP35HF60W
TO-220
Tube
November 2012
Doc ID 023894 Rev 1
This is information on a product in full production.
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13
Contents
STGP35HF60W
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
............................................... 9
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STGP35HF60W
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
Continuous collector current at TC = 25 °C
60
A
IC
(1)
Continuous collector current at TC = 100 °C
35
A
ICP(2)
Pulsed collector current
150
A
(3)
Turn-off latching current
80
A
VCES
ICL
VGE
Gate-emitter voltage
± 20
V
PTOT
Total dissipation at TC = 25 °C
200
W
Tstg
Storage temperature
– 55 to 150
°C
Value
Unit
Operating junction temperature
Tj
1.
Parameter
Calculated according to the iterative formula:
Tj ( max ) – TC
IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
2.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case IGBT
0.63
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
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Electrical characteristics
2
STGP35HF60W
Electrical characteristics
TJ = 25 °C unless otherwise specified)
Table 4.
Symbol
Parameter
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
VCE(sat)
Collector-emitter
saturation voltage
VGE = 15 V, IC= 20 A
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, TJ = 125 °C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20 V
Table 5.
Symbol
4/13
Static
Test conditions
IC = 1 mA
Min. Typ.
Max. Unit
600
V
2.5
V
VGE = 15V, IC = 20 A,TJ= 125 °C
1.65
3.75
5.75
V
250
1
µA
mA
± 100
nA
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-
2400
235
50
-
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 400 V, IC = 20 A,
VGE = 15 V,
(see Figure 16)
-
140
13
52
-
nC
nC
nC
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STGP35HF60W
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
(see Figure 15)
-
30
15
1650
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
TJ = 125 °C (see Figure 15)
-
30
15
1600
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 20 A,
RGE = 10 Ω, VGE = 15 V
(see Figure 15)
-
30
175
40
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 20 A,
RGE = 10 Ω, VGE =15 V,
TJ = 125 °C
(see Figure 15)
-
50
225
70
-
ns
ns
ns
Min.
Typ.
Max.
Unit
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Eon(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
(see Figure 17)
-
290
185
475
Eon(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
TJ = 125 °C (see Figure 17)
-
420
350
770
µJ
µJ
µJ
530
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.
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Electrical characteristics
STGP35HF60W
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
AM16250v1
IC (A)
VGE = 15 V
Transfer characteristics
AM16249v1
IC (A)
11 V
10 V
VCE = 10 V
150
150
9V
100
100
8V
50
50
7V
VGE = 6 V
0
0
Figure 4.
2
4
6
0
VCE (V)
8
Normalized VCE(sat) vs. IC
0
3
Figure 5.
AM16251v1
VCE(sat)
(norm)
6
9
VGE (V)
Normalized VCE(sat) vs. temperature
AM16252v1
VCE(sat)
(norm)
VGE = 15 V
IC = 80 A
1.4
1.4
TJ = -50 °C
TJ = 25 °C
1.2
IC = 60 A
1.2
TJ = 150 °C
1
10 A
IC = 40 A
30 A
1
0.8
IC = 5 A
0.6
0.4
VGE = 15 V
0
Figure 6.
20
20 A
0.8
40
60
IC (A)
Normalized breakdown voltage vs.
temperature
AM16253v1
V CES
(norm)
0.6
-50
Figure 7.
0
50
100
TJ (°C)
Normalized gate threshold voltage
vs. temperature
AM16254v1
VGE(th)
(norm)
1.1
1.05
1
0.9
1
0.8
IC = 1 mA
0.95
VGE = VCE
0.7
0.9
-50
6/13
0
50
100
TJ (°C)
0.6
-50
IC = 250 µA
0
50
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100
TJ (°C)
STGP35HF60W
Figure 8.
Electrical characteristics
Gate charge vs. gate-emitter
voltage
AM16255v1
VGE (V)
Capacitance variations
AM16256v1
C (pF)
f = 1 MHz
VGE = 0
4000
VCC = 400 V
12
Figure 9.
IC = 20 A
3000
Cies
8
2000
4
1000
Coes
Cres
0
0
30
60
90
120
Figure 10. Switching losses vs. temperature
AM16257v1
E (µJ)
0
QG (nC)
0
10
20
30
VCE (V)
40
Figure 11. Switching losses vs. gate
resistance
AM16258v1
E (µJ)
400
EOFF
1500
EON
350
EON
EOFF
300
1000
250
V CE = 400 V,, VGE = 15 V
VCE = 400 V, VGE= 15 V
500
IC = 20 A, TJ = 125 °C
I C = 20 A, RG =10 Ω
200
150
25
50
75
100
0
TJ (°C)
Figure 12. Switching losses vs. collector
current
AM16259v1
E (µJ)
0
60
120
180
Rg (Ω)
Figure 13. Turn-off SOA
AM16260v1
IC (A)
800
EON
100
600
EOFF
10
400
VGE = 15 V, RG = 10 Ω
TC = 150 °C
200
0
10
1
VCE = 400 V, VGE = 15 V
RG = 10 Ω, TJ = 125 °C
0.1
15
20
25
30
35
IC (A)
1
10
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100
VCE (V)
7/13
Electrical characteristics
STGP35HF60W
Figure 14. Thermal impedance
GC18460
8/13
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STGP35HF60W
3
Test circuits
Test circuits
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
AM01504v1
AM01505v1
Figure 17. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
AM01506v1
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Package mechanical data
4
STGP35HF60W
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8.
TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
10/13
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
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STGP35HF60W
Package mechanical data
Figure 18. TO-220 type A drawing
0015988_typeA_Rev_S
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Revision history
5
STGP35HF60W
Revision history
Table 9.
12/13
Document revision history
Date
Revision
06-Nov-2012
1
Changes
Initial release.
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STGP35HF60W
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