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1.5V Drive Nch MOSFET RQ6C050UN Data Sheet Structure Silicon N-channel MOSFET Dimensions TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol : XG Packaging specifications Package Type Inner circuit Taping (6) (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 FD Marking ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±5.0 ±10 1.0 10 1.25 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W ∗1 Pw 10μs, Duty cycle 1% ∗2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board www.rohm.com c 2014 ROHM Co., Ltd. All rights reserved. ○ 1/4 2014.05 - Rev.A Data Sheet RQ6C050UN Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − − 6.5 − − − − − − − − − − Typ. Max. − − − − 22 27 32 40 − 900 190 120 15 25 70 100 12 2.5 1.7 ±10 − 1 1.0 30 38 45 80 − − − − − − − − − − − Unit μA V μA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, V DS=0V ID= 1mA, V GS=0V VDS= 20V, V GS=0V VDS= 10V, I D= 1mA ID= 5.0A, V GS= 4.5V ID= 5.0A, V GS= 2.5V ID= 2.5A, V GS= 1.8V ID= 1.0A, V GS= 1.5V VDS= 10V, I D= 5.0A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 2.5A VGS= 4.5V RL 4Ω RG=10Ω VDD 10V, ID= 5.0A VGS= 4.5V RL 2Ω, RG=10Ω ∗Pulsed Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Unit V Conditions IS= 1.0A, V GS=0V ∗Pulsed www.rohm.com c 2014 ROHM Co., Ltd. All rights reserved. ○ 2/4 2014.05 - Rev.A Data Sheet RQ6C050UN Electrical characteristics curves Ciss Coss 100 Crss 10 0.01 0.1 1 10 td (off) td (on) 10 tr 1 0.01 100 0.1 1 4 3 2 1 0 0 2 4 6 8 10 12 14 16 DRAIN CURRENT : I D (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 100 10 0.01 0.1 1 10 ID=2.5A 40 20 0 0 1 Ta=125 °C Ta=75 °C Ta=25 °C Ta= −25°C 10 0.01 0.1 1 3 4 5 6 7 8 10 GS 9 10 1000 1 0.1 0.01 0.0 (V) 0.5 Ta=125 °C Ta=75 °C Ta=25 °C Ta= −25°C 10 0.01 0.1 1 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) VGS=2.5V Pulsed 100 VGS=0V Pulsed Ta=125 °C Ta=75 °C Ta=25 °C Ta= −25°C Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=4.5V Pulsed 100 2 GATE-SOURCE VOLTAGE : V Fig.7 Static Drain-Source On-State Resistance vs. Drain current (Ι) 1000 10 Ta=25 °C Pulsed ID=5.0A SOURCE CURRENT : I S (A) Ta=125 °C Ta=75 °C Ta=25 °C Ta= −25°C 60 10 Fig.6 Source Current vs. Source-Drain Voltage 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=4.5V Pulsed DRAIN CURRENT : I D (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25 °C VDD=10V VGS=4.5V RG=10Ω Pulsed 10 Ta=25 °C VDD=10V ID=5A RG=10Ω Pulsed 5 DRAIN-SOURCE VOLTAGE : VDS (V) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 GATE-SOURCE VOLTAGE : VGS (V) tf SWITCHING TIME : t (ns) 1000 6 1000 Ta=25 °C f=1MHz VGS=0V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) CAPACITANCE : C (pF) 10000 VGS=1.8V Pulsed Ta=125 °C Ta=75 °C Ta=25 °C Ta= −25°C 100 10 0.01 0.1 1 DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain current (ΙΙΙ) www.rohm.com c 2014 ROHM Co., Ltd. All rights reserved. ○ 3/4 10 2014.05 - Rev.A Data Sheet RQ6C050UN 1000 Ta=125 °C Ta=75 °C Ta=25 °C Ta= −25°C 100 10 0.01 0.1 1 VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 100 10 0.01 10 100 Ta=25 °C Pulsed FORWARD TRANSFER ADMITTANCE : Yfs (S) VGS=1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 0.1 DRAIN CURRENT : I D (A) 1 VDS=10V Pulsed Ta= −25°C Ta=25 °C Ta=75 °C Ta=125 °C 10 1 0.1 0.01 10 0.1 DRAIN CURRENT : I D (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain current (Ι ) 1 10 DRAIN CURRENT : I D (A) Fig.12 Forward Transfer Admittance vs. Drain current Fig.11 Static Drain-Source On-State Resistance vs. Drain current ( ) Measurement circuit Pulse Width VGS ID VDS RL D.U.T. 90% 50% 10% VGS VDS 50% 10% 10% RG VDD 90% td(on) ton Fig.13 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.14 Switching Waveforms VG VGS ID VDS RL Qg VGS IG(Const.) D.U.T. Qgs RG Qgd VDD Charge Fig.15 Gate Charge Measurement Circuit www.rohm.com c 2014 ROHM Co., Ltd. All rights reserved. ○ 4/4 Fig.16 Gate Charge Waveform 2014.05 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. 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